BJT 100 Search Results
BJT 100 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| OPA2863DGKEVM |
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Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp |
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BJT 100 Price and Stock
SEI Stackpole Electronics Inc WRC4BJT100RRES, WW, 4W, 100 OHM, 5% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WRC4BJT100R | Tape & Reel | 1,000 |
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WRC4BJT100R | Tape & Reel | 22 Weeks | 1,000 |
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SEI Stackpole Electronics Inc WRC3BJT100RRES, WW, 3W, 100 OHM, 5% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WRC3BJT100R | Tape & Reel | 1,000 |
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WRC3BJT100R | Tape & Reel | 22 Weeks | 1,000 |
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SEI Stackpole Electronics Inc WRC5BJT100RRES, WW, 5W, 100 OHM, 5% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WRC5BJT100R | Tape & Reel | 1,000 |
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WRC5BJT100R | Tape & Reel | 22 Weeks | 1,000 |
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YAGEO Corporation NPM10BJT-100RRES PWR 100W TO-220 5% 100 OHM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NPM10BJT-100R | Tube | 1 |
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NPM10BJT-100R |
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ECS International Inc ECS-100-18-23B-JTN-TRCrystals 10MHz 18pF ESR 50 20ppm -40C +85C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ECS-100-18-23B-JTN-TR | 1,439 |
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BJT 100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm |
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LM95245 LM95245 SNIS148F 11-bit | |
2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
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LM96163 LM96163 2N3904, 2N3904 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6 | |
RTU620Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta |
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LM96163 LM96163 SNAS433C RTU620 | |
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Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor |
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LM96163 2N3904, | |
power BJT
Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
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iW1810 power BJT bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant | |
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Contextual Info: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and |
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iW1816 64kHz 230VAC | |
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Contextual Info: i, U na. <^E.mi- 2ona.uctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1537A GE PNP POWER BJT PACKAGE STYLE: TO-3 DESCRIPTION The 2N1537A is a Ge PNP Power BJT. It is packaged in a TO-3 Package. |
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2N1537A 2N1537A | |
13E12
Abstract: NE58219
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NE58219 3e-16 5e-11 4e-12 3e-12 6e-12 12e-12 NE58219 03e-12 2e-12 13E12 | |
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Contextual Info: Green Power Solutions srl Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it Via Venezia 34D - 10088 Volpiano TO , Italy GSV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics Suitable for SCR, BJT and IGBT applications |
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GSV22020-16 GSV22020-15 GSV22023-14 GSV22023-13 GSV22026-12 GSV22026-11 GSV22030-10 GSV22030-09 GSV2280 GSV22020-. | |
TRANSISTOR cBC 449Contextual Info: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller |
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UCC28722 UCC28722 50-mW TRANSISTOR cBC 449 | |
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Contextual Info: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller |
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UCC28722 UCC28722 50-mW | |
a14qContextual Info: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits |
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TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 8-BJT/524288 16-BIT a14q | |
PARAMETERS
Abstract: ne894m03 65E-12
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NE894M03 100e-18 293e-3 50e-15 457e-3 155e-15 759e-6 6e-12 83e-15 5e-12 PARAMETERS ne894m03 65E-12 | |
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Contextual Info: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost |
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C2173 C2173 OT23-6 DS-5706-1403 03-Mar-2014 | |
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9435R
Abstract: NSB9435T1 NSB9435T1G power BJT PNP
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NSB9435T1 OT-223 NSB9435T1/D 9435R NSB9435T1 NSB9435T1G power BJT PNP | |
BJT BF 331
Abstract: BF 331 50e3
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NESG2021M05 429e-15 31e-3 324e-15 09e-3 100e-18 50e-3 9e-15 4e-15 4e-12 BJT BF 331 BF 331 50e3 | |
L6521
Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
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L6520 L6521 L6520TR L6521TR L6521 L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC | |
9435R
Abstract: NSB9435T1
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NSB9435T1 r14525 NSB9435T1/D 9435R NSB9435T1 | |
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Contextual Info: KSP1172 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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KSP1172 Freq60M | |
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Contextual Info: October 2007 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process General Description The LM95245 is an 11-bit digital temperature sensor with a 2-wire System Management Bus SMBus interface and |
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LM95245 11-bit | |
bjt 137
Abstract: 50E-12 NESG2030M16
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NESG2030M16 42e-13 2e-13 9e-14 4e-12 12e-12 3e-12 50e-12 120e-15 NESG2030M16 bjt 137 | |
50E-12
Abstract: bjt 137
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NESG2030M04 42e-13 2e-13 9e-14 4e-12 12e-12 3e-12 50e-12 120e-15 NESG2030M04 bjt 137 | |
8 pin ic 9435
Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
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MMJT9435 OT-223 8 pin ic 9435 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor | |
transistor bd 370Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS |
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NSB9435T1 r14525 NSB9435T1/D transistor bd 370 | |