BJT 100 Search Results

Contextual Info: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

power BJT

Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Contextual Info: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT

Contextual Info: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and

Contextual Info: i, U na. <^E.mi- 2ona.uctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1537A GE PNP POWER BJT PACKAGE STYLE: TO-3 DESCRIPTION The 2N1537A is a Ge PNP Power BJT. It is packaged in a TO-3 Package.

13E12

Abstract: NE58219
Contextual Info: NONLINEAR MODEL NE58219 SCHEMATIC CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE58219 CCB 0.03e-12 IS 2.3e-16 MJC 0.28 CCE 0.2e-12 BF 100.3 XCJC

Contextual Info: Green Power Solutions srl Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it Via Venezia 34D - 10088 Volpiano TO , Italy GSV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics Suitable for SCR, BJT and IGBT applications

TRANSISTOR cBC 449

Contextual Info: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller

Contextual Info: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller

a14q

Contextual Info: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits

PARAMETERS

Abstract: ne894m03 65E-12
Contextual Info: NONLINEAR MODEL NE894M03 CCBPKG SCHEMATIC 0.35 pF CCB 0.12 pF LBPKG LB 0.55 nH 0.01 nH Base LCPKG 0.60 nH Collector CCE Q1 0.18 pF LE 0.01 nH CCEPKG 0.07 pF LEPKG 0.95 nH CBEPKG 0.005 pF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 100e-18

Contextual Info: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost

9435R

Abstract: NSB9435T1 NSB9435T1G power BJT PNP
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc

BJT BF 331

Abstract: BF 331 50e3
Contextual Info: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108

L6521

Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
Contextual Info: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■

9435R

Abstract: NSB9435T1
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

Contextual Info: KSP1172 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: October 2007 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process General Description The LM95245 is an 11-bit digital temperature sensor with a 2-wire System Management Bus SMBus interface and

bjt 137

Abstract: 50E-12 NESG2030M16
Contextual Info: NONLINEAR MODEL NESG2030M16 CCB SCHEMATIC LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M16 IS 2.42e-13 MJC 0.16 CCB 0.04e-12 BF 500 XCJC 1

50E-12

Abstract: bjt 137
Contextual Info: NONLINEAR MODEL NESG2030M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M04 IS 2.42e-13 MJC 0.16 CCB 0.07e-12 BF

8 pin ic 9435

Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
Contextual Info: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS

transistor bd 370

Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS