BJE CONTACT Search Results

9 BJE 61

Abstract: BJE 61 bje-61 BJE61 ADO3 marking BJp RCT610 69707 BJE8 bje89
Contextual Info: T11008 BJ 000623 Jumper bar cont. FC2 test plug BJB BJP Pivoting jumper bar BJA Jumper bar for alternated jumping BJE Jumper bar without screw ✓ for compression clamp and ADO blocks This accessory is for connecting or disconnecting two consecutive blocks,

PS12018-A

Abstract: PS12018-A mitsubishi PS12018 active filter inverter circuit diagram
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Application <Application Specific Specific Intelligent Intelligent Power Power Module> Module> ARY N I M I PREL PS12018-A PS12018-A tion. ange. ifica h l spec ct to c a finaare su bje t o n is is ic limits

PS12017-A

Abstract: PS12017 PS12017A 30KW Inverter Diagram regenerative train braking 2 anode igbt inverter circuit diagram CHA capacitor Series
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Application <Application Specific Specific Intelligent Intelligent Power Power Module> Module> ARY N I M I PREL PS12017-A PS12017-A tion. ang e. ifica h l sp ec ct to c a fina are su bje t o n is its is m

M37753FFCFP

Abstract: mitsubishi inverter air conditioning mitsubishi 7700 machine instruction M37753FFCHP d1047
Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37753FFCFP M37753FFCHP MI ELI . ion. hange icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37753FFCFP and the M37753FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

Contextual Info: R EV ECN. NO. A EDIÇÂO INICIAL APP DATE 55.6 48.26 6.0 S P E C IF IC A T IO N S §1 g¡ ® [g @13 © 6 [BJEüKg¡g¡§) O g ¡gjd) M a te r ia l r Insulator : PBT glass reinforced.rated UL 94V-0 I —— I 9.15 i 4 4 lì AWÍAUWMÄVJMtfAIW § wwtóf

Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37753FFCFP M37753FFCHP MI ELI . ion. hange icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37753FFCFP and the M37753FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

mitsubishi inverter air conditioning

Abstract: M37754FFCGP M37754FFCHP
Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37754FFCGP M37754FFCHP MI ELI ion. hange. icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37754FFCGP and the M37754FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37754FFCGP M37754FFCHP MI ELI ion. hange. icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37754FFCGP and the M37754FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

Contextual Info: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M

Contextual Info: ME03 SERIES CONNECTORS 2.54mm .100" Contact Spacing, PCB-to-PCB/PCB-to-Cable Connectors SOLDERLESS COMPLIANT X PIN TYPE Solderless version ME03 connectors are press-fit type connec­ tors introducing compliant X pins featuring solderless connec­ tion. The X shaped compliant section of pin contacts ensures

Scans-0017239

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: N D TE S 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J 6 -J3 ) ( P 3 - P 2 - P 1 ) : (J 2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6,P5,P4) TO (J6.J3)

fC CONNECTOR DRAWING

Contextual Info: J1 J2 J3 J4 J5 J6 J7 J8 TX+ TXRX+ RX- ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 -P 3 : (J 1 -J 2 ) (P 4 -P 6 ) : (J 3 -J 6 ) : 1CT : 1CT ± 2% : 1CT : 1CT ± 2% Bel Stewart Connector 11118 Susquehanna Trail, South Glen Rock, Pa 17327-9199 717.234.7512

FL128

Contextual Info: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, 2.0 A LL RESISTORS ARE ±57. TDLERANCE, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 7 - P 6 - P 8 : (J 3 -J6 ) ( P 1 - P 3 - P 2 ) : (J 1 -J2 ) 1CT 1CT 2.0 INDUCTANCE:

SI-20080

Abstract: lzl 60 c TD-60
Contextual Info: & •vSUUJLr-ÆUUUl^r- u P Îl I f -ÆUUUUr- -'•nm n- '• n m n jjm m - ELECTRICAL SPECIFICATIONS: FREQUENCY RETURN LOSS: 1.0 DIFFERENTIAL TO COMMON 2 .0 3 .0 NEAR REJ: END C R O S S -T A L K INSERTION LOSS (MHz VALU E 1 TD 30 31 TD 60 61 TD 80 81 TD 100

Contextual Info: A- b h / % ME03 SERIES CONNECTORS 2.54mm .100" Contact Spacing, PCB-to-PCB/PCB-to-Cable Connectors ME03 S eries c o n n e c to rs c o n fo rm to IEC/DIN stan dard s. They are tw o -p ie c e c o n n e c to rs fo r PCB c o n n e c tio n w ith 2.54mm (.100") c o n ta c t sp a cin g (tw o and th re e ro w s), and fe a tu re Low

Contextual Info: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 A L L RESISTORS ARE ± TOLERANCE, ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE:

ADSP 21 XXX Sharc processor

Abstract: sharc 21xxx architecture block diagram block diagram of ADSP21xxx SHARC processor ADSP-21060 ADSP21060 1H023
Contextual Info: ADSP-21060 SHARC October 1993 For current information contact Analog Devices at 617 461-3881 SUMMARY • • • • • H igh -P erform an ce S ig n a l C om p u ter for S p eech , S o u n d , G raphics, and Im a g in g A p p lic a tio n s S u p er H arvard A rchitecture— Four In d e p e n d en t B u ses for D u a l D ata, In stru ction s, and I/O

FL128

Contextual Info: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT rd - P 6 CHASSIS G N d (P 8 ) lOOOpF, 2 K V TX+ TXRX+ RX- NDTES 1.0 COMPLIES WITH THE EUROPEAN D IR E C T IV E 2 0 0 2 / 9 5 / E C , CALLIN G FDR THE ELIMINATION OF LEAD AND CITHER HAZARDOUS SUBSTAN CES FROM

40022

Contextual Info: lOOOpF j 2KV ELECTRICAL SPECIFICATIONS: N f lT F S RATIO : P 6 - P 5 - P 4 (P 3 -P 2 -P 1 ) 1.0 TU RN S 2 .0 INDUCTANCE : 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE : 5 .0 DC RESISTANCE: ( J 1 - J 2 ) (P 6 -P 4 ) : (J6 -J3 ) : (J2 -J1 ) (P 6 -P 4 )

M37920F8MHP

Abstract: RASH M37920FCMHP M37920FGMHP 2TC15 0p27
Contextual Info: Y NAR I MITSUBISHI MICROCOMPUTERS . e n. atio chang cific o spe bject t l a u fin s ot a its are is n m This etric li : e m ic Not e para Som IM REL M37920F8MHP, M37920FCMHP, M37920FGMHP P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION

Contextual Info: lOOOpFj £ K V S H IELD o- ELECTRICAL SPECIFICATIONS: NOTES 1 .0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 ) : (J 6 -J 3 ) : (J 2 -J 1 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE : 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

Contextual Info: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT rd- P 6 CHASSIS GNd ( P 8 ) lOOOpF, 2 K V TX+ TXRX+ RX- NDTES 1.0 COMPLIES WITH THE EUROPEAN D IR EC TIV E 2 0 0 2 /9 5 /E C , CALLING FDR THE ELIMINATION OF LEAD AND CITHER HAZARDOUS SUBSTANCES FROM ELECTRONIC PRODUCTS,

Contextual Info: UPPER RDW LDWER RDW 1000PF, 2KV 1000PF, 2KV NDTES 1,0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE OMITTED, ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: - 4 0 ‘C TO + 8 5 ‘C 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 -J2 ) ( P 4 - P 5 - P 6 ) : (J 3 -J6 )

Contextual Info: TD+ PI 1CT i 1CT TD- CP3, \ Cm TCT (P2 RD+ (P4 RD- (P6 RCT (P5 I s ju u u rs m n n \ J1 J2 J3 J4 J5 J6 J7 J8 \ \ -j \ 1CT i 1CT (• TX+ TXRX+ RX- POE POE(P10 0,1 IF, 2 KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: (P 1 -P 3 ) : (J 1 -J 2 ) (P 4 -P 6 ) : (J 3 -J 6 )