BJ 170 Search Results

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

3 phase motor soft starter circuit diagram, ABB

Abstract: abb SOFT STARTER CIRCUIT DIAGRAM thyristor testing 3 phase motor soft starter circuit diagram 3 phase motor soft starter diagram all types of thyristor and schematic igtb ABB Thyristor 1000 A thyristor ABB thyristor 5
Contextual Info: Bi-Directional Control Thyristor Product Information ABB Semiconductors AG Bi-Directional Control Thyristor Product Information Björn Backlund, Jan-Olav Boeriis, Ken Thomas, Robert Waishar, Jürg Waldmeyer, Orhan Toker ABB Semiconductors AG February 1999.

MM1294B

Contextual Info: Protection for Lithium-Ion Batteries 4-serial cells MM1294 MITSUMI Protection for Lithium-Ion Batteries (4-serial cells) Monolithic IC MM1294 Outline Overcharge detection voltage temperature conditions Overcharge detection hysteresis voltage (V) AJ BJ GJ

2N3659

Contextual Info: 2N3659 Si NPN Power BJT 15.75 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N3659 Online Store 2N3659 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 2N5022 Si PNP Power BJT 8.90 Transistors Bipolar Silicon PNP Power. 1 of 2 Home Part Number: 2N5022 Online Store 2N5022 Diodes Si PNP Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

Schaffner NSG 435

Abstract: SIOV-CN2220K25G SIOV-CN1210K30G SIOV-CN0805K14G SIOV-CN1812K30G SIOV-CN0805K25G SIOV-CN1812K75TELEG2 siemens spark gap PM SIOV-CN1206K11G SIOV-CN2220K30AUTOE2G2
Contextual Info: ESD PROTECTION WITH SIOV-MLV SIOV MULTILAYER VARISTORS - SINGLE OR ARRAY TYPES STATE OF THE ART IN ESD PROTECTION By Björn Scharfen and Günther Greier 1. INTRODUCTION Our transient voltage suppression elements; the multilayer varistors MLV series SIOV -CN,

209S5FA

Abstract: cdi dc/dc 200F 209S12F 209S12FA 209S5F
Contextual Info: Distributed By: B. J. W olfe Enterprises, Inc. jKey Features: D S bj>ve.com, (800) 554-1224, Fax (818) 889-8417 ►Low Profile, 24 Pin DIP Package \ 500 VDC Input/Output Isolation ►7.38W/In3 Power Density ►No Derating to +71°C ►Internal n (Pi) Filter

BAY63

Abstract: BCX71JR J8 BCX71JR sot23 mark ck BCX71JR-J8 h11E BCX71 BCX71G BCX71H BCX71HR
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated .

Contextual Info: THM361020AS/ASG -60/70/80 1,048,576 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM361020A is a 1,048,576 word by 36 bit dynamic RAM module which is assembled with 8 TC514400ASJ devices and 4 TC511000AJ/BJ devices on the printed circuit board. This module can be used as

BCX71JR

Abstract: CE 65 M BCX71GR power 22E BAY63 BCX71 BCX71G BCX71H BCX71HR BCX71J
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 – MARCH 2005 PARTMA RKING DETAIL – BCX71 BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK E C B SOT23 ABSOLUTE MA XIMU M RATINGS.

BCX71JR

Abstract: sot23 mark ck BCX71 BCX71G BCX71GR BCX71H BCX71HR BCX71J BCX71K BCX71KR
Contextual Info: SOT23 PIMP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 PARTMARKING DETAILS:BCX71G - BG BCX71GR - CG BCX71H - BH BCX71HR - 6P BCX71J - BJ BCX71JR - J8 BCX71K - BK BCX71KR - CK ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L VALUE UNIT C o lle c to r-E m itte r V oltag e

X7SA

Contextual Info: 大容量多层陶瓷电容器 HIGH VALUE MULTILAYER CERAMIC CAPACITORS ෳᅋུ‫!ڪ‬ OPERATIONG TEMP. ෳᅋུ‫ڪ‬۶ཙ! ‫ؠ‬ଵ! ུ‫ڪ‬໎၂! code Temp.characteristics operating Temp. range −25~＋85℃ B BJ −55∼＋85℃ X5R B7

MG8F-0134

Abstract: 320-9505-006 951 series circular connector K2212 MDM-25SCBR MDM-51SBR MDM-15PBR Epoxy M17-19 A172 A174
Contextual Info: Micro-D PCB — .050" C ontact Spacing MDM-PCB M DM -PCB connectors are designed for use with M DM-PCB connectors are available in 8 shell sizes fle x circuitry, fla t cable and printed circuit boards or with 9 to 100 contacts. Terminations may bj m ulti-layer boards. They use the standard MOM

THM91070AS-60

Abstract: THM91070AS60 TC511000Aj THM91070AL-60 xxxxxx60
Contextual Info: 1,048,576 W O R D S X 9 BIT D YN A M IC RAM M ODULE DESCRIPTION The THM91070AS/AL and THM91070AS/AL are a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514400ASJ and 1 pcs of TC511000AJ/BJ on the printed circuit board. The These modules are optimized for application to the systems which are required high density and

Contextual Info: 1,048,576 W O R D S x 8 BIT D YN A M IC RAM M O DULE DESCRIPTION The THM81070AS/AL and THM81070AS/AL are a 1,048,576 words by 8 bits dynamic RAM module which assembled 2 pcs of TC514400ASJ and 1 pcs of TC511000AJ/BJ on the printed circuit board, '¡'he These modules are optimized for application to the systems which are required high density and

D1351

Abstract: 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
Contextual Info: v 1J Z ] > Silicon Transistor 2 «1 S A 1 1 7 : mm ft o M i i a u i M i * * * * <, cnr^i t o2S C 2785t 3 > 7 U y 7 To 2 .0±0.2 4.0±0.2 6* 6* CM N. .*) 6* M4 6* (T a = 25 *C) « * * * * £ » m i # 0 .5 * § z\ \s 0 $ • 'K - * M |BJ * E £ # $ VCBO *

BSI 208

Abstract: h11m AD 149 AE9 KTC AL tir 1507 bph1 BS30 D 1062 kss 151 xl 1507
Contextual Info: rupc SM8211M ^ NIPPON PRECISION CIRCUITS INC. • n V+ m SM8211M i. C C IR |^ 5 8 4 i;:£ & 6 £ ft* T * » W t B 7± (POST OFFICE CODE STANDARDIZATION ADVISORY GROUP •* bj £ « L/cPOCSAG LSI Tr^o ^L sii± ^tB L > ttz, 512bps 1200bps i r - Ktc ^ L S I f i. M '7 6 .8 k H z ^ X x A ^ cj 7

Trompeter Electronics BJ 72

Abstract: 97 a8 539 Trompeter 305 AD7B Triax* trompeter adapter
Contextual Info: CONN P2 FIG ND 3L74 =175 3L375 3L75FL :J70TL :J70 IJ370 IJ70FL 3J79TL 3J79 3J379 3J79FL 3L 7 1 3J74TL 3J74 3J374 3J74FL 1A 1A IB 1A 2A 2A 2B 2A 3A 3A 3B 3A 4 5A 5A 5B 5A BJ77 Al 1 A2 1 A3 1 A4 1 A5 1 1 A6 1 A7 1 A8 1 A9 BJ 3 7 7 1 Al I A2 1 A3 1 A4 I A5 1 A6

Contextual Info: DASH NO B OARD THICKNESS -1 . 060-.064 -2 .028-.033 — j 3. E XA M P L E OF C O M P L E T E M O D E L U C BJ E 2 0 |— NO. - I DASH NO. MODEL BODY: C ONTACT: .250 2. FINISH: TFS-IB TFS-IB I. 7 5 0 CIRCUIT BOARD EDGE "BNC" ST Y L E R E C E P T A C L E NOTES:

Contextual Info: SPECIFICATION DEV I CE NAME : P o w e r MQSFËT TYPE NAME : 2 S K 2 5 6 2 - 0 1R - SPEC. No. F u j i E l e c t r i c Co., Ltd. T h i s . S p e c i f i c a t i on i s su bj ec t to change w i t h o ut n ot ic e. DATE DRAWN CHECKED NAME APPROVED Fuji Electric Co^id.

bj 023

Abstract: 0 281 003 038 0 281 003 023
Contextual Info: 6 7 T H IS DRAWING IS U N P U B L IS H E D . COPYRIGHT BY TYCO RE LEAS E D ELECTRONICS CORPORATION. ALL FOR PU B LIC ATIO N RIGHTS 5 4 2 3 - LOC RESERVED . D IS T R E V IS IO N S 16 AJ D E S C R IP T IO N LTR BJ RDW & REV PER DWN DATE EC 0 S 1 4 - 0 1 0 3 - 0 2

smd 1Gp

Abstract: emk06 Z47C y5s 0022 smd marking m05 Ceramic Capacitors 104 m30 y5s 0022 100v capacitor Y5S 022 C106M SMD PACKAGE LG Air Conditioning Repair
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS code Temp.characteristics operating Temp. range K25VJ85C B K55VJ125C X7R X5R K55VJ85C K25VJ85C C K55VJ85C X5S K55VJ105C X6S K25VJ85C E K30VJ85C Y5U K25VJ85C F K30VJ85C Y5V

Contextual Info: ᅘߔӊާ๖դ౹‫و‬ኢᄌ෼࿾ ഋྣӤᇀෳᅋӊާ๖դ౹௅ଆቐ೐ᆪ‫ڣ‬ă ኢᄌ෼࿾ Ŗӊդ౹௅ଆቲࣝᆾ‫و‬௠൛ก2008௰10ᆨ࿦ᇀ‫و‬௠൛ăӊդ౹௅ଆࣝᆾ‫و‬௠൛ᅑᅢդ౹‫ݢو‬નٌᆓᄜۢූӰ‫ޚ‬෫Ljูԥ૙ှ