BJ 0 Search Results

Contextual Info: M ontageanweisung Assem bly Instruction Montagecode A08 assembly code Datum date b a 11209 9649 23.02.00 09.10.98 Index Änderung Datum index modification Original original a a ' dote Name Gepi; name Blatt -i sheet '/ Alle Rechte vorbehalten/4// BJ BJ Gez.

assembly code

Abstract: 11209
Contextual Info: Montagecode A15 12656 11209 8664 Index Änderung index modification Original original a a ^ ' A15 M ontageanweisung assembly code c b a Montagecode Assem bly Instruction 06.07.01 24.02.00 12.01.98 MA BJ BJ Datum date Name name Blatt sheet 1/1 Datum date Name

Contextual Info: M o ntagean w eisu ng Montagecode Assem bly Instruction assembly code Montagecode A15 assembly code c b a 12656 11209 8664 Index Änderung index modification Original original aa ' 06.07.01 24.02.00 12.01.98 MA BJ BJ Datum dote Name name Blatt sheet /a '/ 1

MARKING bj

Abstract: KTX215U
Contextual Info: SEMICONDUCTOR KTX215U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

MARKING bj

Abstract: KTX215E
Contextual Info: SEMICONDUCTOR KTX215E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: Montagecode D05 12656 11209 10298 Index Änderung index modification Original original a a ' D05 Assem bly Instruction assembly code c b a Montagecode M o ntage an w e isu n g 06.07.01 20.03.00 13.04.99 Datum date Blatt sheet MA BJ BJ Name name 4 /a ' / I

BJM-12

Abstract: 0179 0176
Contextual Info: BJ Jumper bar Use the BJ jumper bar to connect consecutive and nonconsecutive terminal blocks with the same spacing. Two types of jumper bars are available : an assembled unit and a nonassembled unit. Both jumper bars include a metal tube which makes contact with the terminal

Contextual Info: ~P U "f Hz "7 ^ '7 Zl > X > "tfARRAY TYPE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. , BJ BJ —25— t-85°C X5R —55— h85°C j •4 circuits in 3216 package allows higher placement density and efficiency ■The capacitance in each circuit, F or B dielectric, is 1//F

Contextual Info: PART NO. GUIDE-POST 20031-»»*E—#1F YES 20031—*E—#2F YES 20031-* *E-#3F NO 20031—*E~#4F NO RETAINER YES NO YES NO DATUM PIN MARK TUBE PACKAGE EMBOSS TAPING 2 POS. i* 0£ -l^h |fi}- -Bj&- -0- 1 1 1 Elh 29 X 4jL -BJ-4 -fljP- PH M 20033 -# # -ts71

tc511000

Abstract: TS0P24-P-Q616 tc511000bp tc511000b 511000 dram
Contextual Info: 1,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC511000BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

cxk5863b

Abstract: CXK5863BM
Contextual Info: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are

Contextual Info: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

K316F

Abstract: 325BJ106MN J684C K107B SFA10 325BJ CI047
Contextual Info: M iz -y ^ y 1] > ~ r > "tf HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ —25-~+85°C X7R —55-“ +125°C X5R -5 5 -~+85°C F —25-+85°C Y5V - 3 0 - -+ 8 5 C p •W lUlNtôM fcfêfflU Ä ^ W IS B i:* "J * £ L T i b Z Z t l Z & t , ttÂ,

K25VJ85C

Abstract: K55VJ85C FMMG 2
Contextual Info: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF

taiyo yuden umk

Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

TC514256

Abstract: tc514256bz tc514256bj bft 5f TC514256BFT A158 IC
Contextual Info: 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M PRELIMINARY DESCRIPTION The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: SONY CXK5863B P/B M/BJ-25/30/35 8192-word x 8-bit High Speed CMOS Static RAM Description CX K 5863BP CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are suitable for use in high speed and low power

Contextual Info: 10 63.00 I 7.35 55.00 TYP - 123.00 •6.30 23.15 ±0.25 u n 2.10 ±0.08

256KDRAM

Abstract: st A122 a124 es
Contextual Info: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

4040l1

Contextual Info: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF

a231 ax hen no

Abstract: BFT te 04 A225
Contextual Info: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.