BJ 0 Search Results

Contextual Info: M ontageanweisung Assem bly Instruction Montagecode A08 assembly code Datum date b a 11209 9649 23.02.00 09.10.98 Index Änderung Datum index modification Original original a a ' dote Name Gepi; name Blatt -i sheet '/ Alle Rechte vorbehalten/4// BJ BJ Gez.

MARKING bj

Abstract: KTX215U
Contextual Info: SEMICONDUCTOR KTX215U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

MARKING bj

Abstract: KTX215E
Contextual Info: SEMICONDUCTOR KTX215E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

BJM-12

Abstract: 0179 0176
Contextual Info: BJ Jumper bar Use the BJ jumper bar to connect consecutive and nonconsecutive terminal blocks with the same spacing. Two types of jumper bars are available : an assembled unit and a nonassembled unit. Both jumper bars include a metal tube which makes contact with the terminal

tc511000

Abstract: TS0P24-P-Q616 tc511000bp tc511000b 511000 dram
Contextual Info: 1,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC511000BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

cxk5863b

Abstract: CXK5863BM
Contextual Info: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

K316F

Abstract: 325BJ106MN J684C K107B SFA10 325BJ CI047
Contextual Info: M iz -y ^ y 1] > ~ r > "tf HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ —25-~+85°C X7R —55-“ +125°C X5R -5 5 -~+85°C F —25-+85°C Y5V - 3 0 - -+ 8 5 C p •W lUlNtôM fcfêfflU Ä ^ W IS B i:* "J * £ L T i b Z Z t l Z & t , ttÂ,

capacitor ttc 474

Abstract: ttc 474 M1-0410-5
Contextual Info: 4 * R E E fi JS “b ~y 5. v 0 =i > ~r > UMEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ —25-+85°C X5R —55-+85°C X7R - 5 5 - -+125°C # # m m m * r t s m s i c N i á í * u X a * s a > • The use of Nickel Ni) as material for internal electrodes almost completely

K25VJ85C

Abstract: K55VJ85C FMMG 2
Contextual Info: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF

taiyo yuden umk

Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

TC514256

Abstract: tc514256bz tc514256bj bft 5f TC514256BFT A158 IC
Contextual Info: 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M PRELIMINARY DESCRIPTION The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

256KDRAM

Abstract: st A122 a124 es
Contextual Info: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

4040l1

Contextual Info: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Contextual Info: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3

Contextual Info: 9NIMVÜQ dauoisno P«ll|»/5Hg0cr»l>/Bj IH d»p/HV| SP/PK 0»JBS/aroq/ eKBOdwo 20!» !¿0 Æ l. NO [ L03i'01d<d 31SNV QW H1 Nt 3QVH

TC5118165

Abstract: TC5118165BFT
Contextual Info: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M

Contextual Info: Montagecode A05 assembly code Klemmscheibe clamp Isolierung insulator Kontaktstift contact pin Isolierung insulator washer * Datum date b a 12656 11209 06.07.01 21.02.00 Index index Änderung modification Datum date a a ^ ' Blatt sheet MA BJ Name name 1/1

11209

Contextual Info: Montagecode A16 Datum date 11209 Index Änderung index modification a a ^ ' A16 M ontageanweisung assembly code Original original Montagecode Assem bly Instruction 28 . 02.00 BJ Datum date Name name Blatt sheet 1/1 Gez. drawn 30.06.94 Gepr appd 01.07.94 Maßstab

Contextual Info: BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P Silicon transistors Marking PACKAGE O UTLINE DETAILS ALL DIM ENSIONS IN mm BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK _3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE

9 BJE 61

Abstract: BJE 61 bje-61 BJE61 ADO3 marking BJp RCT610 69707 BJE8 bje89
Contextual Info: T11008 BJ 000623 Jumper bar cont. FC2 test plug BJB BJP Pivoting jumper bar BJA Jumper bar for alternated jumping BJE Jumper bar without screw ✓ for compression clamp and ADO blocks This accessory is for connecting or disconnecting two consecutive blocks,

Kyocera t-100

Abstract: BJ02 capacitor 1nF 100v 10 radial capacitor 100nf 100v polyester capacitor motor 680nf kyocera lcd Inverter MAX 8778 1500nF capacitor 470 uF elco BJ MARKING CODE
Contextual Info: BJ 01/02/05/06/07: Lead Free product 5.08 Radial Leads 63/100/250/400 VMETALLIZED POLYESTER FILM CAPACITOR HIGH PERFORMANCES – HIGH TEMPERATURE PULSE APPLICATIONS Schematic Cross Section Schoop Metallized film APPLICATIONS e Non-inductive, self-healing, metallized polyester film