BJ 0 Search Results

Contextual Info: M ontageanweisung Assem bly Instruction Montagecode A08 assembly code Datum date b a 11209 9649 23.02.00 09.10.98 Index Änderung Datum index modification Original original a a ' dote Name Gepi; name Blatt -i sheet '/ Alle Rechte vorbehalten/4// BJ BJ Gez.

Contextual Info: M o ntagean w eisu ng Montagecode Assem bly Instruction assembly code Montagecode A15 assembly code c b a 12656 11209 8664 Index Änderung index modification Original original aa ' 06.07.01 24.02.00 12.01.98 MA BJ BJ Datum dote Name name Blatt sheet /a '/ 1

MARKING bj

Abstract: KTX215U
Contextual Info: SEMICONDUCTOR KTX215U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

MARKING bj

Abstract: KTX215E
Contextual Info: SEMICONDUCTOR KTX215E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BJ KTX215E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: Montagecode D05 12656 11209 10298 Index Änderung index modification Original original a a ' D05 Assem bly Instruction assembly code c b a Montagecode M o ntage an w e isu n g 06.07.01 20.03.00 13.04.99 Datum date Blatt sheet MA BJ BJ Name name 4 /a ' / I

BJM-12

Abstract: 0179 0176
Contextual Info: BJ Jumper bar Use the BJ jumper bar to connect consecutive and nonconsecutive terminal blocks with the same spacing. Two types of jumper bars are available : an assembled unit and a nonassembled unit. Both jumper bars include a metal tube which makes contact with the terminal

tc511000

Abstract: TS0P24-P-Q616 tc511000bp tc511000b 511000 dram
Contextual Info: 1,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC511000BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

cxk5863b

Abstract: CXK5863BM
Contextual Info: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

K316F

Abstract: 325BJ106MN J684C K107B SFA10 325BJ CI047
Contextual Info: M iz -y ^ y 1] > ~ r > "tf HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ —25-~+85°C X7R —55-“ +125°C X5R -5 5 -~+85°C F —25-+85°C Y5V - 3 0 - -+ 8 5 C p •W lUlNtôM fcfêfflU Ä ^ W IS B i:* "J * £ L T i b Z Z t l Z & t , ttÂ,

capacitor ttc 474

Abstract: ttc 474 M1-0410-5
Contextual Info: 4 * R E E fi JS “b ~y 5. v 0 =i > ~r > UMEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ —25-+85°C X5R —55-+85°C X7R - 5 5 - -+125°C # # m m m * r t s m s i c N i á í * u X a * s a > • The use of Nickel Ni) as material for internal electrodes almost completely

K25VJ85C

Abstract: K55VJ85C FMMG 2
Contextual Info: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF

taiyo yuden umk

Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F
Contextual Info: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This

TC514256

Abstract: tc514256bz tc514256bj bft 5f TC514256BFT A158 IC
Contextual Info: 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M PRELIMINARY DESCRIPTION The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: SONY CXK5863B P/B M/BJ-25/30/35 8192-word x 8-bit High Speed CMOS Static RAM Description CX K 5863BP CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are suitable for use in high speed and low power

Contextual Info: 10 63.00 I 7.35 55.00 TYP - 123.00 •6.30 23.15 ±0.25 u n 2.10 ±0.08

256KDRAM

Abstract: st A122 a124 es
Contextual Info: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

4040l1

Contextual Info: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF

a231 ax hen no

Abstract: BFT te 04 A225
Contextual Info: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.

Contextual Info: * « tt I ¡ tft* $ £ « S 2 - « is 1.fêffl-B Jt IÈ B -« S ffl —55— h125°C u m y s m -m m a i B : —55— h125°C —25— h85"C I l U, —25— h85"C f il, BJ(X7R) : -5 5 ~ + 1 2 5 ”C BJ(X5R) : —55— H85’C F (Y5V) : - 3 0 ~ + 8 5 ‘C

Contextual Info: DASH NO - I -2 -3 -4 - 5 -6 -7 -9 -10 -II •12 CONNECTOR TYPE_ ASSEMBLE PER MATERIAL ^ PL80 CJ80 BJÖ9 8J89F PL380 CJ 3 8 0 BJ3B9 BJ389F PL8 03 CJ 8 0 3 BJ 8 9 3 BJ993F 1 0 0 0 - 0 1 5 6 — I4A 1000 - 0 1 5 2 “ 14 a 3 0 0 0 - 0 0 3 5 -14 a 3005 -0039-14A

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Contextual Info: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3

Contextual Info: 47 77 CIRCUIT 9.29 6.29 24.69 No. 2G 55358-5028 HARD TRAY PACKAGE SEE NOTES m• © §; o bJ tr □ jz U Q_ < U bJ tr □ JZ Q_ U < O LI CC JZ Q_ □ U < o LI tr □ jz L 10 ^ Q_ < WIRE RANGE m mm m s INS. RANGE & m ^ ii t0.2 / \ >X± SEE NOTES DESIGN UNITS