AL154
Abstract: T9.5N
Contextual Info: TELEFUNKEN ELECTRONIC fllC » • fl'iSOO'ib ÛDQbüMÔ 3 BIAL66 T 9,5 N Electrical properties Höchstzulässige Werte Udrm. Uhrh Periodische Vorwärts-und Rückwärts-Spltzensperrspannung Itrmsm Effektiver Durchlaßstrom Itavm Dauergrenzstrom Maximum permissible values
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120x120x1
AL154
T9.5N
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transistor k 3562
Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
Contextual Info: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners
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00052b2
IAL66
ft-11
569-GS
000S154
HAL66
if-11
transistor k 3562
transistor Bf 966
mosfet bf 966
BF966
LM 3558
G28 marking code sot 23
B1412-1
transistor G28
G28 SOT-23
SOT-23 marking BF
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transistor Bf 966
Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners
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OCR Scan
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00052b2
IAL66
ft-11
569-GS
000s154
hal66
if-11
transistor Bf 966
LM 3558
transistor k 3562
B1412-1
G28 marking code sot 23
BF966
mosfet bf 966
G28 SOT-23
transistor G28
k 3561 MOSFET
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BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration
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i200Rb
D0DS332
ft-11
569-GS
000s154
hal66
if-11
BFY88
Telefunken u 237
transistor marking code 2C
BFY 88
telefunken C80
ui77
silicon npn planar rf transistor sot 143
IMB 06 C
BFY 52 transistor
95288
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Telefunken u 237
Abstract: Telefunken u 267 U237B U237 U 237 BG Telefunken u 257 U237BG U257BG U247B U257B
Contextual Info: TELEFUNKEN ELECTRONIC 61C D T T IU IF W K IM electronic CfMtwe Technologies • fi^EDQ^b 0004D55 3 ■ AL6G U 237 BG •U 247 BG U 257 BG •U 267 BG ' T - s a w s - o Monolithic Integrated Circuits App1lcatlon;To drive LED-displays with 5 or 10 diodes Features:
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T-13-01
U237BGU247BG
U257BGU267BG
10LED
0Q0403Q
T-S3-I3-07
Driverfor20LED
Telefunken u 237
Telefunken u 267
U237B
U237
U 237 BG
Telefunken u 257
U237BG
U257BG
U247B
U257B
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K180
Abstract: telefunken m 85 kl T36N KL21
Contextual Info: TELEFUNKEN ELECTRONIC fllC D • T-'ZOp-'/'P fl^SODRb QQObQflB S ■ AL6G T36N Typenrelhe/Type ränge T36N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values U d r m i U r r m Periodische Vorwärts-und Rückwärts-Spltzensperrspannung
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telefunken em 800
Abstract: Telefunken u 237 fll100
Contextual Info: a^EOCHb DOD?ôbtî M • AL6G T czr 8000 •T czr so o i TnKLifFMtMKdKl electronic Creative Technologies Matchable Pairs-Emitter and Detector Construction: Emitter: GaAs-IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor 80?0 and XCZjf.aqjÇJ
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00G7fi72
BIAL66
Q0D7fl73
8000-TCZT
telefunken em 800
Telefunken u 237
fll100
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