GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
Datasheet
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GT30J122A
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 600 V, 30 A, TO-3P(N) |
Datasheet
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GT30J341
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 600 V, 33 A, Built-in Diodes, TO-3P(N) |
Datasheet
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GT30J121
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 600 V, 30 A, TO-3P(N) |
Datasheet
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GT30N135SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
Datasheet
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