BH53131 Search Results

Contextual Info: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.

Contextual Info: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

BLW90

Abstract: 8-32UNC J188
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> • bh53131 IAPX D O ET^C Jl BLW 90 U.H.F. P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

Fast Gate Turn-Off Thyristors

Abstract: BTW58
Contextual Info: 1 AilER PHILIPS/DISCRETE^ ^ ~ O b E J > 53^31 0 0 1 1 % 1 1 BTW 58 SERIES T ' 2 S - l£ T FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, motor control, horizontal

Contextual Info: N AMER PHI LI PS /D IS CR ETE bbS 3 T 3 i 002041s a • 5SE D PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BD204

Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
Contextual Info: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or