BH-16 ON Search Results

BO110

Abstract: smd transistor bh-16 datasheet transistor smd bh QED110-BH bh smd BH 16 smd BH-16 BH-16 transistor
Contextual Info: QED110-BH 16-05-2000 QED 110-AH/BH SMD 20x13x10 mm / 6 pins DTCXO Technical specifications TEMEX TIME & FREQUENCY Our QED 110 is a new generation of surface mountable digitally temperature controlled crystal oscillator. The main specifications are the very low consumption, the high stability and the small size.

Contextual Info: KM23C4200B CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: PRELIMINARY KM23C32100FP CMOS MASK ROM 32M-BH 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)

Contextual Info: PRELIMINARY KM23C32000FP CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V • Current consumption

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Rb4142 0017112 THS KM23C32000G CMOS MASK ROM 32M-BH 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.)

l400bb70v

Abstract: L400BB12VC
Contextual Info: AMD3 Am29LV400B 4 Megabit 512 K X 8-BH/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

8 BIT ALU IC

Contextual Info: LOGIC DEVICES INC Bh E' D • SSbSTQS 0001333 2 ■ _ L29C101 16-bit ALU Slice FEATURES □ Four-Wide 2910 ALU Plus Carry Look-ahead Logic and Full 16-bit Data Paths □ High Speed, Low Power CMOS Technology □ Fast Clock Period: 35 ns Commercial, 45 ns Military

Contextual Info: AMD3 Am29F800B Known Good Die a Megabit 1 M x 8-BH/S12 K x 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations

m23c3

Contextual Info: SAMSUNG ELECTRONICS INC b?E 3 • DD171S1 T3Ô ■ S H 6 K 7^4142 KM23C32005G CMOS MASK ROM 32M-BH 4M x8!2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time

Contextual Info: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.

628 ladder

Abstract: tr4 surface mount TR4 xxx 627T 627V100 V100
Contextual Info: bi441 short form 2007 dev.qxd 6/26/07 8:59 AM Page 13 Fixed Resistors 13 Thick Film Resistor Networks Surface Mount 627T/V Through-Hole High Voltage Precision Divider, High Voltage L/M/BH BHV 2/3 Model 627/628 628 Ladder Number of Leads 14/16 16 14 4 to 14

Contextual Info: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 KM23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)

Contextual Info: PRELJM iN A Rv AMD3 Am29F800B 8 Megabit 1 M x 8-BH/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements

ADC71

Contextual Info: Complete, High Resolution 16-Bit A/D Converters AD ADC71/AD ADC72 ANALOG DEVICES □ FEATURES F U N C T IO N A L BLOCK DIAGRAM Com plete 16-Bh Converter W ith Reference and Clock ± 0 .0 0 3 % M axim um Nonlinearity N o M issin g C odes to 14 B its Fast Conversion - 35|is 14 Bit

GM23C4100B

Abstract: ORD 1114 GM23C4100B-15 GM23C4100B-12
Contextual Info: @ LG Semicon. Co. LTD Description The GM23C4100B high performance read only memory is organized either as 524,288 x 8 bits byte mode or 262,144 x 16 b its (w ord m ode) fo llo w e d by BH E m ode s e le c t. The GM23C4100B offers automatic power down controlled by the make

Contextual Info: SAttSUNG E L E C T R O N I C S INC b7E » • 7 T b m t4E ODlTlDfl 5T4 I SPICK C M O S MASK R OM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using

23C32000

Contextual Info: KM23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)

s0044

Contextual Info: A D V A N C E IN F O R M A T I O N AMD Am29LV200B 2 Megabit 256 K x 8-BH/128 K x 16-Bit CMOS 3.0 Volt-oniy Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Program Command — Full voltage range: 2.7 to 3.6 volt read and write

xmt3350-pt

Contextual Info: Tfwt H E W L E T T mL'tiM P a c k a r d Laser Transm itter for Single Mode Fiber Optic System s Technical Data XMT3150-PT XMT3350-PT Description Features SONET/SDH Compatible Reliable 1300 nm MOVPE BH Laser Single +5 Volt Supply Compact 16-pin DIP Plastic

U 324 SAMSUNG

Abstract: KM23C8100BG 524288X16
Contextual Info: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> n 7^4142 KM23C2100 0011124 ? ESSM6K CMOS MASK ROM 2M-BH 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization Byte M ode: 262,144 x 8 ROM T h e K M 23C 2100 is a fully s tatic m as k program m able

16-Blt

Abstract: b7ah
Contextual Info: O K I Semiconductor MSM531632C : - 1,048,576-Word x 16-BH or 2,097,152-Word x 8-Bit Low-Voltage Mask ROM ' D E S C R IP T IO N w„e,d °“ o o , Ï "d5P* Ï > CM<? M“ k ROM lhat ca" ' ' “ “ “ »'y betweu, 1,048576- 2,097,152-w ord x 8-bit configurations. The MSM531632C operates on a single 3 0 V or

bm 1410

Contextual Info: ANALOG DEVICES □ FEATURES 16-BH A d d re s se s w ith H igh e r Precision O p tio n s 3 0 n s A d d re s s O u tp u t D e lay @ 11.1M H z O peration L o o k - A h e a d Pipeline Versatile A d d re s sin g H ardw are: 30 16-Bit R e giste rs 16-Bit A L U w ith Left/Right S h ift & C a rry I/O

wurth 742 792 02

Abstract: wurth* 742 700 5 wurth 742 792 04 wurth 742 792 15 742 792 113 wurth 742 793 742 792 07 wurth 742 792 622 742 792 71 "742 793 1"
Contextual Info: W ü rth E lektronik G m bH & C o. KG V e r b in d u n g s te c h n ik R iedenstraße 16 D 74635 Kupferzell Telefon: +49 (0 7 9 4 4 ) 91 9 3-0 WURTH ELEKTRONIK Telefax: (+49) (0 7 9 4 4 ) 91 93-51 à NOUVEAUTE 0402 SMD-Ferrites / Ferrites CMS BL ""E n □ >