BH 24 Search Results

cl2 Gas sensor

Abstract: Alphasense so2 sensor datasheet tds sensor gas sensor no2 NO2 sensor nh3 sensor hydrogen sulfide gas sensor c2h4 sensor gas sensor CO
Contextual Info: α S H2S-BH Hydrogen Sulfide Sensor PATENT PENDING Technical Specification Figure 1 H2S-BH Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 H2S-BH Specification PERFORMANCE Sensitivity Response time Zero current

Contextual Info: CONTACT ELECTRONICS INC SbE D I 2 374 731 OQOOOfl? 571= • BH SERIES A C O SOS BOX HEADER ORDERING INFORMATION 1. DESCRIPTION BH = Box Header 2. MOUNTING ANGLE S = Straight RA = Right Angle 3. POSITION 10, 12,14,16, 20, 24, 26, 30, 34, 40, 44, 50, 56, 60, 64

BH12PB1WHFV

Abstract: BH18PB1WHFV BH30PB1WHFV BH33PB1WHFV
Contextual Info: CMOS LDO Regulator Series for Portable Equipments CMOS LDO Regulators with Auto Power Saving Function BH□□PB1WHFV Series No.09020EAT05 Description The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator

Contextual Info: " K BH Electronics INDUCTORS Toroid Inductors for Switching Power Supplies ELECTRICAL CHARACTERISTICS AT 25° C Current Range, 1 Amp to 50 Amps Cast Effective Cfesign RATED DC CURRENT AMPS BH PART NUMBER Wide F&rge of Inductance MINIMUM INDUCTANCE AT RATED DC (|iH)

170M1472

Abstract: bussmann Fuse 170m2621 170m2621 BH-1131 170M1518 170M1367 BH-1133 170M1468 163-07 170M1317
Contextual Info: Bussmann Modular Fuseblocks BH-1 Series 0-2500 Volts, 400 Amps mm ± .25 Inches (± .01) 31.75 1.250" Buss ® Catalog Symbol: BH-1 Series Base: Light-weight, high temperature thermoplastic Mounting Studs: Plated steel Connector: Tin-plated aluminum. Standard connector accepts #6 - 250 MCM

Contextual Info: Ordering number : ENA2255 LE25CB643TT-BH CMOS IC 64 kb SPI CMOS Serial EEPROM http://onsemi.com Overview The LE25CB643TT-BH hereinafter referred to as ‘this device’ is serial peripheral interface EEPROM (Electrically Erasable and Programmable ROM). This device realizes high speed and a high level reliability by incorporating high

BH33PB1WHFV

Abstract: BH12PB1WHFV BH18PB1WHFV BH30PB1WHFV
Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□PB1WHFV Series No.11020EBT05 ●Description The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator characteristics are ideal. The regulators cut power consumption by lowering their own current consumption to approximately

BH15RB1WGUT

Abstract: BH25RB1WGUT BH28RB1WGUT BH33RB1WGUT VCSP60N1
Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□RB1WGUT series No.11020ECT03 ●Description The BH□□RB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision ± 1% output voltage. Proprietary ROHM technology enables a small load regulation of 2 mV and a dropout voltage of 100 mV.

BHNB1WHFV

Abstract: BH25NB1WHFV BH30NB1WHFV BH33NB1WHFV
Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB Typ., 1 kHz . They are ideal for use in high-performance, analog applications and offer improved line

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator BH 1 8FB1WHFV TYPE Fig.1 Plastic Mold Fig. 2 Fig. 3 - 8 Fig.21 PACKAGE BLOCK TEST CIRCUIT APPRI CAT ION CIRCUIT FUTURES # # # # # # # # # Output Voltage Accuracy 1.8V±25mV

smd marking BG

Abstract: BCX71H BCX71J BCX71K BCX71G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

501-1013

Contextual Info: BH Electronics INDUCTORS Toroid Inductors for Switching Power Supplies • Current Range, 1 Amp to 50 Amps • Cost Effective Design • Wide Range of Inductance • Maximum Temperature Rise, 40˚C Above Ambient • PC Mount % INITIAL INDUCTANCE TYPICAL INDUCTANCE

BH-S5798

Abstract: 530-Max
Contextual Info: ISDN S-INTERFACE ISOLATION TRANSFORMER P/N: BH-S5798 ! ! SURFACE MOUNT, DUAL MEET THE PULSE WAVEFORM TEMPLATE OF CCITT 1.430 WHEN RECOMMENDED TRANSFORMER AND CHIP PAIR IS USED. 2KVRMS ISOLATION VOLTAGE. EXCELLENT LONGITUDINAL BALANCE REEL TAPE OR TUBE PACKAGING.

87c51

Contextual Info: in y P K iy iM ID K lM V 87C51/80C51BH/80C31BH CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Commercial/Express 87C51/80C51BH/80C51BHP/80C31 BH *See Table 1 for Proliferation Options • High Performance CHMOS EPROM ■ 24 MHz Internal Operation -3 Only ■ Improved Quick-Pulse Programming

ZS 1052

Abstract: PerkinElmer SCR TRIGGER circuit HS-DDC-H24-0003
Contextual Info: Page # : 1 of 1 Date : 24/08/98 ISSUED BY : Joan Low Rev Date : Index #: DEVICE NAME : BH 1670 Mechanical Data : Dimension mm e r l 47.5 max g 32 ± 1 dia d 6 ± 0.5 dia x Polarity : Without Colour Corrective Coating : Remarks: 1. Envelope material : B1 or B2

ma 8920

Abstract: BH-8920
Contextual Info: Q BH-8920 Amplifier P erform ance Specifications Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA) DC Voltage (V)

Contextual Info: 172 186 IC-Fassung / IC-Leiste - ultra-flach - BH 2,4mm Technische Daten /Technical Data Gehäuse/Abdeckung/Hebel Thermoplastischer Kunststoff, nach UL94 V-0 Case/Cover/Actuator Thermoplastic, rated UL94 V-0 Kontaktmaterial Hülse: Messing gedreht Feder: 4-Lamellen-Clip, Beryllium-Kupfer

Contextual Info: Q BH-8937 Amplifier P erform ance Specifications Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA) DC Voltage (V)

SO24

Abstract: U2752M U2752M-AFL U2752M-AFLG3 4096 IC 14 pins
Contextual Info: U2752M Digital I/Q-Generator Chip for DAB The U2752M is an integrated circuit in CMOS technology for splitting a digital DAB signal into its quadrature components. The device is designed for DAB ETS 300 401 applications. Gm bH Description Electrostatic sensitive device.

Contextual Info: BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P Silicon transistors Marking PACKAGE O UTLINE DETAILS ALL DIM ENSIONS IN mm BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK _3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

Contextual Info: Q BH -4002 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MFIz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

"Q-bit Corporation"

Abstract: bh401
Contextual Info: Q BH-4015 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

BH-5407

Contextual Info: Q BH-5407 Amplifier P erform ance Specifications Min/Max +25 °C Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)