BGB420 APPLICATION NOTE Search Results

BGB420 APPLICATION NOTE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
PEF24628EV1X		Rochester Electronics LLC	PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip	PDF
OMAP5910JZVL2		Texas Instruments	Applications processor
OMAP5910JGVL2		Texas Instruments	Applications processor
XOMAPL138BZWT4		Texas Instruments	Low-Power Applications Processor 361-NFBGA 0 to 90
XOMAPL138BZCE4		Texas Instruments	Low-Power Applications Processor 361-NFBGA 0 to 90

BGB420 APPLICATION NOTE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BR 8050 Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420 Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001	Original	BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S	PDF
BGB420 Contextual Info: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package	Original	BGB420 BGB420 OT-343 BFP420. GPS05605	PDF
CHIP T502 S Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001	Original	BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN	PDF
BFP420 application notes Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz Contextual Info: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.	Original	BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BFP420 application notes BFP420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz	PDF
bgb420 application note Abstract: 29ma Contextual Info: BGA619 High IP3 PCS CDMA2000 Low Noise Amplifier Features • high IP3 in all modes • NF 1.5dB @ High Gain mode • three gain steps • Power off function • 50Ω matched @ 1.96GHz • Low Parts Count • tiny leadless package SMS DS PM Nov 2003 No. 1	Original	BGA619 CDMA2000) 96GHz March04 96GHz 15dBm BGA428 BGA622 BGA619 BGB420/540 bgb420 application note 29ma	PDF
1R Transistor Abstract: Toko 10mm drop bgb420 application note AN068 BFP540 Contextual Info: $SSOLFDWLRQ 1RWH 1R 6LOLFRQ 'LVFUHWHV :LGH %DQG $PSOLILHUV IRU WKH +] WR +] UHTXHQF\ 5DQJH XVLQJ %% DQG %% )HDWXUHV 3 &XUUHQW HDVLO\ DGMXVWDEOH E\ RQO\ RQH H[WHUQDO UHVLVWRU 7HPSHUDWXUH VWDELOL]HG ELDV SRLQW 1R YROWDJH GURS DW WKH FROOHFWRU GXH	Original	800/900MHz, GSM900, DCS1800, AN068 1R Transistor Toko 10mm drop bgb420 application note AN068 BFP540	PDF