BGA 2J MARKING CODE Search Results

BGA 2J marking code

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect

78 ball fbga thermal resistance

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1

4c 8184

Abstract: BGA 2J marking code 18-SE
Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

GVT71128DA36

Abstract: GVT71256DA18
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

marking code SA

Contextual Info: ADVANCE M I in P n N 256K x 18/128K x 36 LVTTL, PIPELINED LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • Fast cycle times 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V power supply (Vdd)

ic MARKING J LA 8P

Contextual Info: ADVANCE M in P n M I u 2 5 256K x 18/128K x 36 I/O, PIPELINED LATE W RITE SRAM V M T 5 9 L2 5 6 V 18 P M T 5 9 L 128 V 3 6 P I A T E U M I 1_ WRITE SRAM FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)

MICRON POWER RESISTOR 4d

Contextual Info: ADVANCE 256K X 18/128K x 36 HSTL, LA T C H E D LA TE W RITE SR AM |V/|IC=RO N A C k J Ih L A T F WRITE SRAM FEATURES • Fast cycle times 5ns, 5.5ns and 6ns • 256K x 18 or 128K x 36 configurations • Single +3.3V +0.3V/-0.2V pow er supply (Vdd) • Separate isolated output buffer supply (V ddQ)

Contextual Info: ADVANCE |V/|C RQ N I A T E l _ m l_ MT59L256V18L MT59L128V36L WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V p o w e r s u p p ly (V d d )

Contextual Info: ADVANCE 256K x 18/128K x 36 HSTL, LATCHED LATE WRITE SRAM MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K x 18/128K x 36 2.5V I/O, LATCHED LATE WRITE SRAM MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K x 18/128K x 36 LVTTL, LATCHED LATE WRITE SRAM MT59L256L18L MT59L128L36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K x 18/128K x 36 HSTL, PIPELINED LATE WRITE SRAM MT59L256H18P MT59L128H36P 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

micron cmos 1988

Contextual Info: ADVANCE 256K X 18/128K x 36 2.5V I/O, FLOW -THROUGH LATE WRITE SRAM l^ ic n o N Dual Clock and Single Clock FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)

Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, PIPELINED LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256L18P MT59L128L36P FEATURES * Fast cycle times 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations * Single +3.3V +0.3V/-0.2V power supply (Vdd)