| BG3123R |
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Infineon Technologies
|
DUAL N-Channel MOSFET Tetrode |
Original |
PDF
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185.22KB |
8 |
| BG3123R |
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Infineon Technologies
|
Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 25.0 dB; F (typ): 1.3 dB; |
Original |
PDF
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99.56KB |
12 |
| BG3123RE6327 |
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Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 |
Original |
PDF
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11 |
| BG3123RE6327 |
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Infineon Technologies
|
Transistor Mosfet N-CH 240V 0.29A 4SOT-89 T/R |
Original |
PDF
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196.2KB |
8 |
| BG3123RE6327HTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 |
Original |
PDF
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196.28KB |
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| BG3123RH6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
Original |
PDF
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12 |
| BG3123RH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
Original |
PDF
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102KB |
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