BG 22 TRANSISTOR Search Results

SAF3602

Abstract: nxp saturn V1043 SAF3601EL/V3040 SAF3602EL/V3040C518 V10-40
Contextual Info: SAF360X LF BG A2 23 Digital radio and processing system-on-chip Rev. 2 — 22 August 2014 Product short data sheet 1. General description The SAF360X is a monolithic integrated digital terrestrial radio processor. The SAF360X family includes different chip variants—SAF3600, SAF3601, SAF3602, SAF3604,

Contextual Info: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5

BGY36

Abstract: BGY33 BGY32 BGY35 77209 vHF amplifier module
Contextual Info: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband am plifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 f i load. The modules consist of a tw o stage RF amplifier using npn transistor chips, together w ith lumpedelement matching components.

Philips BGY36 VHF Power amplifier Module

Abstract: BGY36 BGY33 Philips bgy32 BGY35 BGV33 BGY32 12p capacitor VB212
Contextual Info: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband amplifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The deviceswill produce 18 W output into a 50 Î2 load. The modules consist of a two stage RF amplifier using npn transistor chips, together with lumpedelement matching components.

bg 22 transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK203-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

5V VSG MOSFET

Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

K203

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured

PowerMOS transistor TOPFET high side switch

Abstract: BUK203-50Y
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50X
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

BU 103 A transistor

Abstract: transistor BG 23 0/transistor BG 23
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

BUK202-50X

Abstract: PowerMOS transistor TOPFET high side switch BUK202
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

pfe 225

Abstract: K203 EUK203-50X
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

M38UC

Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
Contextual Info: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296

LTC4444-5

Abstract: LTC4444HMS8E LTC4444MPMS8E LTC4446 8H,D3 4444 diode bg 8pin msop package LTC4440-5 LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with

LTC4440-5

Abstract: LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current

LTC4444-5

Abstract: LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current

BLF861

Abstract: UT70 rogers 5880 821 ceramic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION

Transistor Vb

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK202-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

buk201

Abstract: PowerMOS transistor TOPFET high side switch BUK201-50X
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

LTC4442

Abstract: LTC4440-5
Contextual Info: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down

MOSFET 4446

Abstract: switching regulator 12v 3A 660 tg diode LTC4440-5 100v boost ic 4446 36V high power cmos driver LTC3722-2 LTC3785 15v 5a dc boost
Contextual Info: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down

LTC4440-5

Abstract: LTC1154
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current

Dual Full-Bridge MOSFET Driver

Abstract: 48V to 12V buck boost converter LTC4444-5 LTC4444-5EMS8E LTC3780 LTC4444-5E LTC4444-5I LTC4444-5IMS8E LTC4446 LTC3901
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current