BFY 50 Search Results

Contextual Info: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F?<= E L _ E C 3T R C 3 I M I C : S M ECHANICAL OUTLINE FEA TU RES APPLICATIONS • Low S a tu ra tio n V o lta g e V c E . a i ) • • • 0 . 5 V t yp @ I A

BFY33

Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.

BFY34

Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.

BFY50

Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
Contextual Info: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.

BFY 52 transistor

Abstract: BFY50 BOX69477 022deg BFY 39 transistor
Contextual Info: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR MICRO EL.ECTRDNIC5 MECHANICAL OUTLINE APPLICATIONS FEA TU R ES • Low Satu ratio n V o lta g e VcE *afc * • •0 .5 V typ @ IA • Audio A m p lifier O u tp u t Stag e

bfy50

Abstract: FY51
Contextual Info: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage

BFY50

Abstract: BFY 50 55x1 BFY51 BFY52 BFY 39
Contextual Info: BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The B F Y 5 0 , B F Y 51 and B F Y 5 2 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case. T he y are inte nd e d fo r general purpose linear and sw itc h in g a p p lica tio n s.

BFY86

Abstract: db347 Scans-0010448
Contextual Info: Nicht für Neuentwicklungen Not for new developments BFY 85 • BFY 86 Silizium-NPN-Epitaxial-Planar-Doppeltransistoren Silicon NPN Epitaxial Planar Double Transistors Anwendungen: In Differenzverstärkern Applications: In diffe re n tia l am plifiers Besondere Merkmale:

BFY34

Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY 34 transistor

Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY56

Abstract: BFY56A BFY 56A ft bfy BFY 20
Contextual Info: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.

BFY83

Abstract: bfy82
Contextual Info: BFY 83 SILICON PLANAR NPN DUAL, H IG H -VO LTA G E AM PLIFIER The BFY 82 is a six term inal device containing tw o isolated silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range, offers the circ u it designer matched transistors w ith specified performance

Contextual Info: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Hermetic Jam Nut D-Hole Mount Receptacle, Threaded Coupling II M83723/89Y / M83723/89P BTY/BFY/BNY-19 I Fully Mated Band† G Dia. SJT 38999 III PART # .781/ .761 Max. 19.83/19.32 Max. N Contact Stickout

BFY 94 transistor

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on

A03 transistor

Abstract: BFY280
Contextual Info: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥

marking A04

Abstract: BFY181 p 181 V Q62702F1715
Contextual Info: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz

on semiconductor marking code A04

Abstract: marking A04 C BFY182
Contextual Info: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz

A03 transistor

Abstract: microwave transducer BFY196 BFY 36 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

A03 transistor

Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Contextual Info: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

BFy 90 transistor

Contextual Info: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified

A03 transistor

Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz