BFT 50 TH Search Results

BJS 33

Contextual Info: TOSHIBA TENTATIVE TC5164 5 805BJ/BFT/BJS/BFTS-40,-50 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,608-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805BJ/BFT/BJS/BFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

Contextual Info: TOSHIBA TENTATIVE TC5164 5 405BJ/BFT/BJS/BFTS-40,-50 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16,777,216-WORD X4-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)405BJ/BFT/BJS/BFTS is an EDO (hyper page) dynamic RAM organized as 16,777,216

Contextual Info: TOSHIBA TENTATIVE TC5164 5 805BJ/BFT/BJS/BFTS-40,-50 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD x 8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805BJ/BFT/BJS/BFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

Contextual Info: TOSHIBA TC5164 5 405BJ/BFT/BJS/BFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16,777,216-WORD X 4-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)405BJ/BFT/BJS/BFTS is an EDO (hyper page) dynamic RAM organized as 16,777,216

Contextual Info: RB-EA3H PÔR PUBLICATION- 1UI5 BRAWINd IS UNPUBLISHED.- COPYRIGHT - BfT TYCO ELECTRONICS CORPORATION. ^ .- RIGH7S RESERVED. LOC DIST AF 50 LTR p E D

Transistor BFT 44

Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
Contextual Info: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the

BFT-12

Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390
Contextual Info: BFT12 NPN Silicon planar RF transistor BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41 867 sim. T 0 -5 0 for universal application in amplifiers up into the GHz range, e.g. for broadband antenna amplifiers with a high output power and linearity and for

Contextual Info: O K I Semiconductor MSM65514/65P5 14_ OKI's ORIGINAL nX HIGH PERFORMANCE CMOS 8-BfT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION MSM65514 is a high-performance 8-bit single-chip controller that employs OKI's original nX-8/50 CPU core. With a minimum instruction execution time of 400 ns 10MHz clock , the MSM65514 is capable of high­

Transistor BFT 10

Abstract: transistor 3Ft bux c 651 emetteur 3ft73
Contextual Info: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature

BFT47

Abstract: BFT49 BFT48
Contextual Info: BFT47 BFT48 BFT49 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X The NPN planar epitaxial transistors BF 257, BF 258 and BF 259 are intended for use in chrominance out­ put stages and luminance output stage of colour tele*

of ic tc4066bp

Abstract: TC4066BP TC-4066BP
Contextual Info: TC4066BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4066BP,TC4066BF,TC4066BFN,TC4066BFT TC4066B Quad Bilateral Switch TC4066B contains four independent circuits of bidirectional switches. When control input CONT is set to “H” level, the

Contextual Info: TC4011BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4011BP,TC4011BF,TC4011BFN,TC4011BFT TC4011B Quad 2 Input NAND Gate The TC4011B is 2-input positive logic NAND gate respectively. Since all the outputs of these gates are provided with the

TC4001BP applications

Contextual Info: TC4001BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4001BP,TC4001BF,TC4001BFN,TC4001BFT TC4001B Quad 2 Input NOR Gate The TC4001B is 2-input positive NOR gate, respectively. Since the outputs of these gates are equipped with the buffers,

IC - TC4001BP

Abstract: TC4001BP cmos ic tc4001bp TC4001BP applications DIP14-P-300-2 TC4001B TC4001BF TC4001BFN TC4001BFT
Contextual Info: TC4001BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4001BP,TC4001BF,TC4001BFN,TC4001BFT TC4001B Quad 2 Input NOR Gate The TC4001B is 2-input positive NOR gate, respectively. Since the outputs of these gates are equipped with the buffers,

ic TC4066BP

Abstract: TC4066BP TC4066
Contextual Info: TC4066BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4066BP,TC4066BF,TC4066BFN,TC4066BFT TC4066B Quad Bilateral Switch TC4066B contains four independent circuits of bidirectional switches. When control input CONT is set to “H” level, the

TC4066BP

Abstract: of ic tc4066bp DIP14-P-300-2 TC4066B TC4066BF TC4066BFN TC4066BFT tc4066
Contextual Info: TC4066BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4066BP,TC4066BF,TC4066BFN,TC4066BFT TC4066B Quad Bilateral Switch TC4066B contains four independent circuits of bidirectional switches. When control input CONT is set to “H” level, the

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC5332410 BF / BFT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by

TC4066BP

Abstract: of ic tc4066bp TC-4066BP
Contextual Info: TC4066BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4066BP,TC4066BF,TC4066BFN,TC4066BFT TC4066B Quad Bilateral Switch TC4066B contains four independent circuits of bidirectional switches. When control input CONT is set to “H” level, the

ic TC4066BP

Abstract: of ic tc4066bp TC4066BP
Contextual Info: TC4066BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4066BP,TC4066BF,TC4066BFN,TC4066BFT TC4066B Quad Bilateral Switch TC4066B contains four independent circuits of bidirectional switches. When control input CONT is set to “H” level, the

tc5118165bj

Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Contextual Info: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: TC4011BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4011BP,TC4011BF,TC4011BFN,TC4011BFT TC4011B Quad 2 Input NAND Gate The TC4011B is 2-input positive logic NAND gate respectively. Since all the outputs of these gates are provided with the

Contextual Info: TC4011BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4011BP,TC4011BF,TC4011BFN,TC4011BFT TC4011B Quad 2 Input NAND Gate The TC4011B is 2-input positive logic NAND gate respectively. Since all the outputs of these gates are provided with the

IC - TC4001BP

Contextual Info: TC4001BP/BF/BFN/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4001BP,TC4001BF,TC4001BFN,TC4001BFT TC4001B Quad 2 Input NOR Gate The TC4001B is 2-input positive NOR gate, respectively. Since the outputs of these gates are equipped with the buffers,

Contextual Info: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.