BFR93A E Search Results

BFR93A E

Abstract: BFR93AR-T3 R5 SOT transistor BFR93A transistor npn Epitaxial Silicon zs 35 300MHZ 800MHZ BFR93A BFR93AR BFR93AR-T1
Contextual Info: PLANETA BFR93A/BFR93AR The RF Line NPN Silicon High-Frequency Transistor 1 3 DESCRIPTION The BFR93A/BFR93AR is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic

BFR93A application board

Abstract: BFR93A Temic Semiconductors bfr93a BFR93AR marking B_Y Telefunken
Contextual Info: BFR93A/BFR93AR Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 94 9280 BFR93A Marking: + R2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

MAR 618 transistor

Abstract: S parameters of BFR93AR GHz transistor transistor d 1556 Temic Semiconductors bfr93a BFR93a
Contextual Info: Temic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency • Low noise figure BFR93A Marking: + R2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

ZS 633

Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

BFR93A

Abstract: BFR93A application board ZS 1052 AC BFR93AR BFR93AW transistor BFR93A MARKING WR2 SOT-23
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

MARKING CODE 618 SOT23

Abstract: MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23
Contextual Info: Not for new design, this product will be obsoleted soon BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component

A1489 TRANSISTOR

Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: Collector 5v npn TRANSISTOR RF TRANSISTOR 3 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN transistor BFR93A 30ma 40v npn BFR93A NPN RF Transistor RF TRANSISTOR 1.5 GHZ
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93A DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS Ta=25℃

Contextual Info: APX bbS3^31 0032213 014 Philips Semiconductors Product specification NPN 6 GHz wideband transistor X3A-BFR91A crystal N AUER PHILIPS/DISCRETE bRE D DESCRIPTION MECHANICAL DATA Crystal NPN crystal used in BFR91A SOT37 , BFQ22S (TO-72) and BFR93A (SOT23). Crystals are supplied as whole

BFR93AW-GS08

Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

po102

Abstract: 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307
Contextual Info: RF & MICROWAVE TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857

BFR93A

Abstract: marking A3 amplifier case 449 S parameters of BFR93AR GHz transistor
Contextual Info: T e m ic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency

BFR91A

Abstract: BFR91 BFQ22S X3A-BFR91A BFR91 transistor crystal PHILIPS BFR93A
Contextual Info: Philips Sem iconductors Product specification NPN 6 GHz wideband transistor crystal X3A-BFR91A 5bE S PHILIPS INTERNATIONAL DESCRIPTION •i 711002b D O M b 103 55b [PHIN M ECHANICAL DATA NPN crystal used in BFR91A SO T37 , BFQ22S (TO-72) and BFR93A (SOT23). Crystals are supplied as whole

BFR93A

Contextual Info: c/J.£ii£u u <~ £mi-L,onaueto'i L/^ioaucti, Line. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR93A DESCRIPTION SOT- 2 3 package • High Power Gain A"* """••-

Transistor BFR 90 application

Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93
Contextual Info: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23

BF520

Abstract: bf519 S0642 BF654 S0692 BFS18 BF517 BF599 BFR92A BFS17
Contextual Info: SURFACE-M O UNTED DEVICES R A D IO F R E Q U E N C Y T R A N S IS T O R S Types ★SO 91 8 'HI ★BFS17 <R>m ★BFR92A R + BFR93A IR) B FS18 <R) ★BFS19 IR) BF654 *B FS 2 0 IR) BF599 ♦S0642 ★S0692 Pola­ rity N N N N N N N N N N P Maxim um ratings Marking

transistor 667

Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Contextual Info: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2

fr93

Abstract: Transistor BFR 96 BFR 36.2
Contextual Info: ViSHAY _ B FR93 A/B FR93 AR/B FR93 AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications W ide band a m plifier up to GHz range. Features • High pow er gain

Contextual Info: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.

BFR53

Abstract: marking codes transistors sot-223
Contextual Info: BROADBAND SM D TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave

w1p npn

Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Contextual Info: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are