BFR183 Search Results

Contextual Info: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFR183T

Abstract: Telefunken
Contextual Info: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain

Contextual Info: BFR183T NPN Silicon RF Transistor Preliminary data 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR183TF

Contextual Info: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: BFR183W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free RoHS compliant and halogen-free package with visible leads

BFR183T

Abstract: BFR183TW
Contextual Info: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure

BFR183T

Abstract: BFR183TW
Contextual Info: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure

Contextual Info: BFR183T/BFR183TW Y Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 2 mA to 30 mA. Features

Contextual Info: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at

BFR183

Abstract: BCW66
Contextual Info: BFR183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFR183T

Abstract: BFR183TW
Contextual Info: BFR183T/BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure

BFR18

Abstract: BFR183W VSO05561 SPICE 2G6
Contextual Info: BFR183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure

BFR183T

Abstract: BFR183TW
Contextual Info: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at

BFR183W

Abstract: transistor marking RHs BCR108W
Contextual Info: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR183T NPN Silicon RF Transistor Preliminary data 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR183W

Contextual Info: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR183TF

Contextual Info: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

marking RH

Contextual Info: Tem ic BFR183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor £ Electrostatic sensitive device. Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 inA. Features

Contextual Info: BFR183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFR183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFR183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking