| BF513 |
|
NXP Semiconductors
|
BF513 - N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 10 to 18 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 3 V; VDSmax: 20 V; YFS: 7 ms |
Original |
PDF
|
58.1KB |
9 |
| BF513 |
|
Philips Semiconductors
|
N-Channel Silicon Field-Effect Transistor |
Original |
PDF
|
32.31KB |
7 |
| BF513 |
|
Philips Semiconductors
|
N-Channel Silicon Field-Effect Transistor |
Original |
PDF
|
101.31KB |
5 |
| BF513 |
|
Unknown
|
Semiconductor Master Cross Reference Guide |
Scan |
PDF
|
114.45KB |
1 |
| BF513 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
115.43KB |
1 |
| BF513 |
|
Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
|
169.79KB |
1 |
| BF513 |
|
Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
|
169.79KB |
1 |
| BF513 |
|
Unknown
|
Shortform Datasheet & Cross References Data |
Short Form |
PDF
|
87.88KB |
1 |
| BF513,215 |
|
NXP Semiconductors
|
BF513 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET RF Small Signal |
Original |
PDF
|
58.1KB |
9 |
| BF513,215 |
|
NXP Semiconductors
|
N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 10 to 18 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 3 V; VDSmax: 20 V; YFS: 7 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
Original |
PDF
|
32.3KB |
7 |
| BF513 T/R |
|
Philips Semiconductors
|
FET Transistor, N Channel, ID 0.018A, Tape and Reel |
Original |
PDF
|
32.28KB |
7 |
| BF513T/R |
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
35.55KB |
1 |
