| BF5030 |  | Infineon Technologies | Single Semi Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 41.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; | Original | PDF | 589.11KB | 13 | 
| BF 5030 E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT143 | Original | PDF | 579.84KB |  | 
| BF5030E6327 |  | Infineon Technologies | RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT143 | Original | PDF |  | 13 | 
| BF5030R |  | Infineon Technologies | Single Semi Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 41.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; | Original | PDF | 589.11KB | 13 | 
| BF 5030R E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT143R | Original | PDF | 579.84KB |  | 
| BF5030RE6327 |  | Infineon Technologies | RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT143R | Original | PDF |  | 13 | 
| BF5030W |  | Infineon Technologies | Silicon N-Channel MOSFET Tetrode | Original | PDF | 168.36KB | 10 | 
| BF5030W |  | Infineon Technologies | Single Semi Biased; Package: PG-SOT343-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 41.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; | Original | PDF | 589.11KB | 13 | 
| BF5030WE6327 |  | Infineon Technologies | RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-343 | Original | PDF |  | 13 | 
| BF5030WE6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT-343 | Original | PDF | 575.01KB |  | 
| BF5030WH6327 |  | Infineon Technologies | RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 8V 25MA SOT343 | Original | PDF |  | 13 | 
| BF5030WH6327XTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 8V 800MHZ SOT343 | Original | PDF | 575.01KB |  |