BF 996 S Search Results

BF996

Abstract: BF996S Q62702-F1021 Silicon N Channel MOSFET Tetrode marking code GL
Contextual Info: Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure BF 996 S Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 996 S MH Q62702-F1021 S SOT-143 D G2 G1 Maximum Ratings

Contextual Info: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S

transistor g23 mosfet

Abstract: FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23
Contextual Info: TELEFUNKEN EL EC TR O N I C IALGG BF 996 Marked with: M 96 •¡mmiFMlMIN] electronic Creative Technofogies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially or UHF-tuners Features: • Integrated Gate protection diodes

mosfet bf 966

Abstract: smd bf BF965 BF963 Marking fs sot mg sot-143 BF964S marking 16 sot143 BF96
Contextual Info: -T -3 I-Ä S SIEMENS AKTIENGESELLSC HAF ÖE3SbOS GDSb27'i 4 « S I E G M7E » HF-MOS-Transistoren / RF MOS Transistors N-Channel MOSFET Tetrodes Plastic Package Type Max. ratings Characteristics CO Ï? P.O. G ps > mA mW mS Package Fig. F dB V mA f MHz dB 16.5

BF996S

Abstract: GPS25 829 Tetrode
Contextual Info: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range

BF996

Abstract: BF 996 S BF996S
Contextual Info: Tem ic BF996S Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode £ Applications Electrostatic sensitive device. Observe precautions for handling. *' Input and mixer stages in UHF tuner. Features • Integrated gate protection diodes

KJE SOT-23

Abstract: BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 BF994 14 SOT-23 RF Transistors sot-23 BFS17n
Contextual Info: MOS field-effect transistors Type Characteristics Tamb = 25 ° C Maximum ratings N channel '•'bs V Pto, h mA 9ts mS mW °C G dB V Kds Package outlines f M Hz Iq mA Pin configu­ ration No. Type BF 989 20 30 150 200 12 1 6 ,5 15 7 800 13 S O T 143 BF 993

OPA675M

Abstract: R1007 lm215 L120 648e3
Contextual Info: * OPA675M SPICE MACRO MODEL * Created 3/23/92 BCB * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSUMES NO RESPONSIBILITY FOR INACCURACIES OR

RUR 0820

Contextual Info: AMDÌ1 PRELIMINARY INFORMATION AMD-K5 Processor Data Sheet 18522D/0—Juni 996 I AMD-K5 Processor Features • Four-issue superscalar core with six parallel execution units arranged in a five-stage pipeline ■ 16-Kbyte, dual-tagged, four-way, set-associative instruction

648e3

Abstract: OPA676M R8110
Contextual Info: * OPA676M SPICE MACRO MODEL * Created 1/13/92 BCB * REV.B 2/8/93 : BCB: TTL switch overdrove into saturation. Reduced voltage * amplitude to npn switch. * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

BLVDS-25

Abstract: LVDSEXT-25 4564 RAM XC2VP70 FF1704 pinout XC2V1000 Pin-out XC2V1500 XC2V2000 XC2V3000 XC2V6000 XC2V8000
Contextual Info: Xilinx Virtex-II Series FPGAs and RocketPHY Physical Layer Transceivers Transceiver Blocks 992 88 120 200 264 432 528 624 720 912 1104 1108 Chip Scale Packages CS – wire-bond chip-scale BGA (0.8 mm ball spacing) 144 8 88 92 FF896 92 8 FF1152 BGA Packages (BG) – wire-bond standard BGA (1.27 mm ball spacing)

Contextual Info: AMD3 18524 70- Novi 996 AM D-K5 Processor Technical Reference M anual 5 Bus Interface This c h a p te r describes two closely re la te d subjects, bus signals (Sections 5.1 and 5.2 and th e bus-cycle protocols im plem en ted w ith those signals (Sections 5.3 and 5.4). T hese sections

mbf 460

Abstract: 7479 02A4 A02A F799 ni 8476 LMZ 9
Contextual Info: 753.+753.*C @B1;8<80AB?4 @86<0: ?4:0E 5JFVWTJU _ 9dV ]b^e^\mkb\ lmk^g`ma _hk IGE93V /[^mp^^g \hbe Zg] \hgmZ\ml0 _ Snk`^ pbmalmZg] ohemZ`^ ni mh 8;66VBD2 f^^ml GDD PZkm <> Zg] T^e^\hk]bZ _ M^^ml FN<6?;6 5 FN:7669 _ SMT Zg] EJP mri^l ZoZbeZ[e^ _ Cb_nk\Zm^] \hgmZ\ml

"DIODE" SY 171 1 g

Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
Contextual Info: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise

Contextual Info: Si GEC P L E S S E Y j a n u a r y i 996 SEM IC OND UCT OR S DS4273-2.3 TF447.A FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 1200V I 470A T RMS 5000A ^TSM 200V/|XS dV/dt 500A/(iS dl/dt 20jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

Contextual Info: GEC P L E S S E Y S i j a n u a r y i 996 S E M I C O N D U C T O R S DS4411-1.0 D K 1 3 . . F X FAST SWITCHING THYRISTOR KEY PARAMETERS VDRM 1200V ^T RMS 1 ' tsm 1600A dVdt 200V/(is dl/dt 500A/|is tq 15|is APPLICATIONS • High Power Inverters And Choppers.

Contextual Info: 1234567897A 123452675829AB2C8DC9E57F99C9127BD63B 123456789ABC DEF289C AC A 123456761898AA9BCDEF6E 38A8FD865C8F66 BD86FD 86!!"666666 #$%%&65C8F666666 18D'6 C8 6 -D.)6 27DA)66 28)6 *+$6,"%6,""676#66666

SSD1803

Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1803 Product Preview 100 x 34 STN LCD Segment / Common Mono Driver with Controller This document contains information on a product under development. Solomon Systech reserves the right to change or discontinue this product without notice.

SSD1803

Abstract: solomon lcd display solomon 20 PIN DISPLAY
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1803 Advance Information 100 x 34 STN LCD Segment / Common Mono Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.

nte c102

Abstract: cs 2648 lcd C116 NJU6679 NJU6679A C127 NJU6679B NJU6679CL S131 rse 4530
Contextual Info: NJU6679 PRELIMINARY 128-common x 132-segment BIT MAP LCD DRIVER GENERAL DESCRIPTION PACKAGE OUTLINE The NJU6679 is a bit map LCD driver to display graphics or characters. It contains 25,344 bits display data RAM, microprocessor interface circuits, instruction decoder, 132-segment and 128-common drivers.

Contextual Info: Advance Data Sheet February 1996 ~= Al«l Microelectronics ATTL7583A/B Line Card Access Switch Features • Direct pin-for-pin replacement for ATTL7543 ■ Small size/surface-mount packaging ■ Monolithic IC reliability ■ No impulse noise generation ■ No zero cross switching required

Contextual Info: 7 SGS-THOMSON *7M, « re iu ra M D Ig S STV9427 STV9428-STV9429 HIGH SPEED MULTISYNCH ON-SCREEN DISPLAY FOR MONITOR ADVANCE DATA • CMOS SINGLE CHIP OSD FOR MONITOR ■ BUILT IN 1 KBYTE RAM HO LDING: - CHARACTER CODES - USER DEFINABLE CHARACTERS ■ 207 ALPHANUMERIC CHARACTERS OR

diagram ic 12f 629

Abstract: 30f 124 equivalent diode F6 4d diode F4 4e diode F6 5b MC4006 603 31f ADB 646 MC7414 ic 324
Contextual Info: MCM6560 MCM6561 MCM6562 MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N C H A N N E L , L O W T H R E S H O L D 8K BINARY ADDRESSABLE R EA D O N LY MEMORIES The M C M 6560 is a mask program m able 8 1 9 2 -b it static Read O n ly M em o ry fabricated w ith N-Channei metal gate technology. A