BF 649 Search Results

BF199

Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
Contextual Info: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor

dual-gate

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

bo 615

Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297

Contextual Info: A88 5E88) %74874900":A0<0%?;7C ,C5B0?>697EB12<50C,0C9J5 BF F "'010"+0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%010!"&! %0 & , =

B1490

Contextual Info: D99 6ACD9) 0/4.,77C0;<:@0/ -=EC289:890677:4:6?4J0C-0D:K6 BF F "'020"+0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%020!"&! %0 M0&BBC8C0EC5065:E:@?02AAC@G65 M0$6DD0E92?0EBBR0=62<28604FCC6?E M0CBO0@AE:@?02G2:=23=6 M0FBBB.0:D@=2E:@? M0-=EC209:890677:4:6?4J70FA0E@01

2N5496

Abstract: 5492 2N5492 5494 2n6496 2N5494 2N5490
Contextual Info: 2N 5490 2 N 5492 2N 5494 2I\I 5496 NPN SILICO N TR A N SISTO R , HOMOBASE TR AN S IS TO R NPN S IL IC IU M , H O M O B ASE Compi. o f 2N 6107 series P R E L IM IN A R Y D A T A NOTICE P R E LIM IN AIR E - LF large signal power amplification A m plification BF grands signaux de puissance

bh 27701

Abstract: 27701A F62Z 27701 BH 27.701 A B-27701A bf 45704 bf 44 704 bh 27 601 B-22601A
Contextual Info: PONTS MONOPHASÉS single phase bridges VR TYPES 0 , 5 A * / tamb=25°< A (V) 100 200 400 600 50 80 150 250 (A) 0,25 220 330 440 (A) 3 1.25 25°C: 125 C (MA) (mA) TYPES 10 100 200 400 600 800 1200 50 80 150 250 380 650 0,1 4 4 4 4 M 14 IN 645 IN 647 IN 649

EZ 644

Abstract: F 9624 CD kd 502 QHQM58445 6T-5 EZ 929
Contextual Info: 1,z{ /0./ 65<,7 2}9*/04. 7,2}= -A>LMJAK R SB7 Zfdgc`Xek `e XZZfi[XeZ\ n`k_ HDB :6499175 R Qkife^ i\j`jkXeZ\ XY`c`kp kf j_fik Z`iZl`k Zlii\ek Xk 7:44@ .74 k`d\j dfi\ k_Xe iXk\[ cfX[ Zlii\ek/ R 564@ jn`kZ_`e^ ZXgXY`c`kp R G\Xmp cfX[ lg kf 77268bT@ R 8bT [`\c\Zki`Z jki\e^k_

PIC18F6493

Abstract: dspic spi code example
Contextual Info: PIC18F6393/6493/8393/8493 PIC18F6393/6493/8393/8493 Rev. C0 Silicon Errata The PIC18F6393/6493/8393/8493 Rev. C0 parts you have received conform functionally to the Device Data Sheet DS39896A and its superset data sheet, “PIC18F6390/6490/8390/8490 Data

thermistor pic

Abstract: transistor bf 760 PIC18F6390 PIC18F6490 PIC18F8390 PIC18F8490 PIC32 PICC-18 PIC32 i2c specification dspic spi code example
Contextual Info: PIC18F6390/6490/8390/8490 PIC18F6390/6490/8390/8490 Rev. C1 Silicon Errata The PIC18F6390/6490/8390/8490 Rev. C1 parts you have received conform functionally to the Device Data Sheet DS39629C , except for the anomalies described below. Any Data Sheet Clarification issues

PIC18F6390

Abstract: PIC18F6490 PIC18F8390 PIC18F8490 PIC32 dspic spi code example PIC18f6490 example codes
Contextual Info: PIC18F6390/6490/8390/8490 PIC18F6390/6490/8390/8490 Rev. C0 Silicon Errata The PIC18F6390/6490/8390/8490 Rev. C0 parts you have received conform functionally to the Device Data Sheet DS39629C , except for the anomalies described below. Any Data Sheet Clarification issues

I2C AN MICROCHIP

Abstract: DEVREV PIC18F6493 PIC32 PICC-18 i2c mplab 6493 dspic spi code example
Contextual Info: PIC18F6393/6493/8393/8493 PIC18F6393/6493/8393/8493 Family Silicon Errata and Data Sheet Clarification The PIC18F6393/6493/8393/8493 family devices that you have received conform functionally to the current Device Data Sheet DS39896B , except for the anomalies described in this document.

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

PIC18 example codes Spi slave

Abstract: PIC18 example codes i2c PIC18 MSSP MASTER, SLAVE SPI ASSEMBLY SOURCE CODE PIC18 MSSP MASTER, SLAVE SOURCE CODE PIC18 example codes lcd PIC18 example C18 codes PIC18 example codes i2c slave PIC18 example codes spi dspic example codes i2c PIC18 example codes SPI master
Contextual Info: PIC18F6390/6490/8390/8490 PIC18F6390/6490/8390/8490 Rev. B3 Silicon Errata 1. Module: MSSP The PIC18F6390/6490/8390/8490 Rev. B3 parts you have received conform functionally to the Device Data Sheet DS39629B , except for the anomalies described below. Any Data Sheet Clarification issues

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

C6020

Contextual Info: M0!?5FDECJ0*E2?52C50CO0I0CO0@@EAC:?E M0*:I0*:5650*9:6=5:?8 M086?4J0AAC@G65 M0BC60CE02?50E-0!?AFED M0EB0.:560 2?860!?AFE0%@56=D );0%4.)60 )+0)16503033/-'%6-215 +6=64@> 2E24@> @:?E0@70$@25 (/0*6C:6D *:?8=660F2=60+C:A=60'FEAFE0EA.020A.0 70@?G6CE6CD

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

1N SERIES DIODE

Abstract: 1A DIODE 1N bf 649 sb 649 a M6HZ ba 12300 M8HZ 1N645 S02MB1A RB1A
Contextual Info: mouldings a THOMSON-CSF moulages Three phase bridges Ponts triphasés + Single phase bridges Ponts monophasés + Parallel diode Series diode pairs pairs Bivalves Doubleurs VR •dsm 10 ms V RRM 'm is recom ­ mended V (V) (A) 100 200 50 80 150 250 380 In per diode

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

K0 8A

Contextual Info: K0$:76C:=60.2AA2>CH K07BAJ0C?05BJ0'@6A2C:?>037EAJ0BC2AC0D@4 K0,>:E6AB2<0!>@DC03F070CF-4 K0?>7?A=2<<H04?2C650 LB K0 ? *0?=@<:2>C06B:8> (:0$3-(50(*/(054020F22.+&$5+104 .*DA7BFAA9 0*6A:6B *:>8<60'DC@DC0!>5DBCA:2< (?F6A0*D@@<:6B 24C?AH0DC?=2C:?>

BdP 285

Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157