BF 536 Search Results

HYB18TC512160BF-3S

Abstract: HYB18TC512
Contextual Info: September 2007 HYB18T C51280 0 BF HYB18T C51216 0 BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC512[80/16]0BF 512-Mbit Double-Data-Rate-Two SDRAM HYB18TC512800BF, HYB18TC512160BF

HYB18TC256160BF-3S

Abstract: VM 256MB DDR400 HYB18TC256800BF 800E DDR400
Contextual Info: May 2007 HYB18T C25680 0 BF HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Internet Data Sheet HYB18TC256[80/16]0BF 256-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.3, 2007-05

transistor bf 198

Abstract: BF198 emetteur video transistor 139 BF bf 536 C11E
Contextual Info: *BF 198 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L îfç Preferred device D isp o sitif recommandé The BF 198 is intended for use in the control stage of television video IF am plifier.

HYB18TC256160BF

Contextual Info: February 2007 HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC256160BF 256-Mbit Double-Data-Rate-Two SDRAM HYB18TC256160BF Revision History: 2007-02, Rev. 1.21

BF199

Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
Contextual Info: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor

DG TEEK

Abstract: 4lgj roe EYF 50E71
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HPL69556

Abstract: BF31
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dual-gate

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

17610

Abstract: D268 D271 D272 LC8935 CP512 X1649 MC7732 MC9-MC16 y176
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Q7666

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lm 7486

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F799

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VDE598

Abstract: BG 65A
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transistor BC 536

Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor
Contextual Info: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage

Q5627

Abstract: ho2 2312 IRO44
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on 2518 transistor

Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time

PEH536YDF3270M2

Abstract: IEC 384-4 PEH536 PEH536PCC4100M2 BC 536 PEH 160 BD 140 transistor EI-40 EK 110 PEH536VCD3180M2
Contextual Info: PEH 536 105°C • • • • • Snap-In Ultra Long Life Grade PCB Mounting Low ESR and ESL High ripple current APPLICATION BASIC DESIGN Typical applications for PEH 536 would be SMPS, drives, welding equipment, UPS and other power electronic applications where

PEH536PCC4100M2

Abstract: BC 536 PEH536JAD4390M2 PEH536JAE4470M2 PEH536JBC4390M2 PEH536JBD4560M2 PEH536JBE4680M2 PEH536JBF4820M2 PEH536JCC4560M2 PEH536JCD4680M2
Contextual Info: PEH 536 RoHS 105°C Compliant • Snap-In • Ultra Long Life Grade • PCB Mounting • Low ESR and ESL • High ripple current application Basic design Typical applications for PEH 536 would be SMPS, drives, welding equipment, UPS and other power electronic applications where