BF 494 C Search Results

Contextual Info: L0*D2>52B50 E2BD6B0B:4;0?D@B:>D L0C8E020E8-0 >@EDC L0B?=0D9-0B0E@0D?0CD-0D0%?=:>2<0&ED@EDC L0+9B?E890?<60$?E>D:>8 L0CBB-02C:40 C?<2D:?> '90#3-'50' /'054020D22.+%#5+104 '90#3-'50')/'054020D22.+%#5+104 L02C6@<2D604?<:>8 +6CD020$62CEB6=6>D

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

BF173

Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
Contextual Info: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un­ controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est

a02 Transistor rf

Abstract: transistor bf 198
Contextual Info: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package

BC 458

Abstract: ba 458 ba 3837 S08MM BA 758 BD 877 BD 4218 BC 2388
Contextual Info: MS008 .050” C EN TER , LEAD ED TYPE B i l —c — NOTE 7 *— — c2 J- 1 STANDARD *-A — CA­ DETAIL A PLANE NOTES: 7. CONFIGURATION W ITHIN INDICATED AREA OPTIONAL. 1. REFER TO APPLICABLE SYMBOL LIST. 2. DIM EN SIO N IN G AND TOLERANCING PER

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

Contextual Info: K0.:560 2>8600!>@DC K0$?F0 A?7:<670!>5DBCAH0*C2>52A50?C@A:>C K0<?32<0*276CH086>4H0?=@<:2>46 K0)? *0?=@<:2>C (90$2,(40(*.(/43020F11-+&$4+0/3 -:56?AD5:?0)?DC6AB 2C24?= (?:>C0?70*2<6 +6BC02>50%62BDA6=6>C $0*:8>B02>50$:89C:>8 1(*DB0*6A:6B D10G0E910DB.080

B2045

Contextual Info: K0.:560 2>8600!>@DC K0$?F0 A?7:<670!>5DBCAH0*C2>52A50?C@A:>C K0<?32<0*276CH086>4H0?=@<:2>46 K0)? *0?=@<:2>C &60"0*&20&(,&-21020D//+)$"2).-1 -:56?AD5:?0)?DC6AB 2C24?= (?:>C0?70*2<6 +6BC02>50%62BDA6=6>C $0*:8>B02>50$:89C:>8 1(*DB0*6A:6B D10G0E910DB.080

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

CCD sim

Abstract: 510H KS7301B
Contextual Info: KS7301B DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION 160-QFP-2424 KS7301B is a CMOS IC designed for Digital Camcorder System. This Processor is Compatible for NTSC/PAL & Hiband/Normal Camcorder System. FEATURES - Luminance & Chroma Signal Procession - Built in Timing Generator

FZT1053A

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 1 - SEPTEMBER 1997 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

BF 235

Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: >>>7D;9C5;8<2=35294?=A2< K1.:561 2>8611">@DC141B181EB1-15 K1?=@24C1*:I6131!:89177:4:6>4H K1 D2A2>C665181FBJ1*C2AC8,@

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

ztx1049a

Abstract: DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995

TRANSISTOR SE 135

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997_ ~ FEATURES * V CEO = -2 5 V * 3 A m p C o n tin u o u s C u rre n t * 10 A m p Pulse C u rre n t * L o w S a tu ra tio n V o lta g e

Contextual Info: Panasonic For Communications Equipment MN86074 Image Processing LSI • Overview The MN86074 boosts image quality by applying various image processing techniques to the analog signal from an image sensor. Features include correction of laser printer dot spreading at the pixel level, processing to

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables