BF 494 C Search Results

Contextual Info: L0*D2>52B50 E2BD6B0B:4;0?D@B:>D L0C8E020E8-0 >@EDC L0B?=0D9-0B0E@0D?0CD-0D0%?=:>2<0&ED@EDC L0+9B?E890?<60$?E>D:>8 L0CBB-02C:40 C?<2D:?> '90#3-'50' /'054020D22.+%#5+104 '90#3-'50')/'054020D22.+%#5+104 L02C6@<2D604?<:>8 +6CD020$62CEB6=6>D

TRANSISTOR BFW 11

Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

BF173

Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
Contextual Info: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un­ controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est

a02 Transistor rf

Abstract: transistor bf 198
Contextual Info: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package

TCD5241BD

Abstract: TCD5240D
Contextual Info: TCD6220AF TCD5241BD, TCD5240D, TCD5251BD, TCD5250D TIMING PULSE GENERATING IC The CMOS LSI of TC6220AF was developed to drive thè TCD5241BD, TCD5251BD, TCD5240D and TCD5250D. The TC6220AF can be combined with a vertical clock driver to constitute the CCD area image sensor driving

BC 458

Abstract: ba 458 ba 3837 S08MM BA 758 BD 877 BD 4218 BC 2388
Contextual Info: MS008 .050” C EN TER , LEAD ED TYPE B i l —c — NOTE 7 *— — c2 J- 1 STANDARD *-A — CA­ DETAIL A PLANE NOTES: 7. CONFIGURATION W ITHIN INDICATED AREA OPTIONAL. 1. REFER TO APPLICABLE SYMBOL LIST. 2. DIM EN SIO N IN G AND TOLERANCING PER

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

Contextual Info: K0.:560 2>8600!>@DC K0$?F0 A?7:<670!>5DBCAH0*C2>52A50?C@A:>C K0<?32<0*276CH086>4H0?=@<:2>46 K0)? *0?=@<:2>C (90$2,(40(*.(/43020F11-+&$4+0/3 -:56?AD5:?0)?DC6AB 2C24?= (?:>C0?70*2<6 +6BC02>50%62BDA6=6>C $0*:8>B02>50$:89C:>8 1(*DB0*6A:6B D10G0E910DB.080

B2045

Contextual Info: K0.:560 2>8600!>@DC K0$?F0 A?7:<670!>5DBCAH0*C2>52A50?C@A:>C K0<?32<0*276CH086>4H0?=@<:2>46 K0)? *0?=@<:2>C &60"0*&20&(,&-21020D//+)$"2).-1 -:56?AD5:?0)?DC6AB 2C24?= (?:>C0?70*2<6 +6BC02>50%62BDA6=6>C $0*:8>B02>50$:89C:>8 1(*DB0*6A:6B D10G0E910DB.080

Contextual Info: ZTX1049A SPICE PARAMETERS *ZETEX ZTX1049A Spice model * .M OD EL Last revision 15/6/95 ZTX1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 M JC=0.352 M JE=0.36

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

ZTX1053A

Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am

TF-450

Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

CCD sim

Abstract: 510H KS7301B
Contextual Info: KS7301B DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION 160-QFP-2424 KS7301B is a CMOS IC designed for Digital Camcorder System. This Processor is Compatible for NTSC/PAL & Hiband/Normal Camcorder System. FEATURES - Luminance & Chroma Signal Procession - Built in Timing Generator

Contextual Info: L0,>:F6BC2<0!>@ED03080D-4 L0 ?G6B024D?B0?BB64D650 L0DBB10(62;0(?G6B042@23:<:DI L0D0062B0.2BB2>DI L0$6CC0D92>0B9=062BD90<62;28604EBB6>D *<0&5/*70 *,1*276010440-(&7-326 24D?BI0ED?=2D:?> 1.*8(0*6B:6C +6CD020%62CEB6=6>D CB.0D?0FB.0 *:>8<60'ED@ED0(?G6B0*E@@<:6C

1SZ51

Abstract: 1SZ52 1SZ53 TA225 ntp 3200 1SZ50 SC-7552
Contextual Info: iNn il 3 # & Sc * M 3» Jm inn rm Mi m >f 4* * H QJ ,|ttr liflii TtOt' -K".fl1 P t a ffl S a m to to cn 1+ Cn n& 3 Bllli rj o tO rf H H *0 S I s X# * CjE H' v.: V i n 2 ; N —>• 5 o> cn 1 + cn 175 - & ocn ft 3f FR ,B1'¡1| P^T> itiP s : H 3 + F it 4ff:

TF-450

Abstract: FZT1047A transistor BF 257 ZTX1047A bf550 DSA003706
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1047A ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 44mΩ at 5A

87C76

Contextual Info: 12345678429AB9C D7EFF 777844 12342567894A5B 5678429AB9C 12342567894C5DD5E B7A4A89A A89A 689 768A !" 679A64B89C649A#487787A76F 1 2 3 4 5 6 7 8 9 A B C D 8 E

FZT1053A

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 1 - SEPTEMBER 1997 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A

FZT1053A

Abstract: power 22E TR22E BF600 DSA003707 C05A 22e9
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 2 - MARCH 2001 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A