BF 494 C Search Results

TRANSISTOR BFW 11

Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

a02 Transistor rf

Abstract: transistor bf 198
Contextual Info: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package

TCD5241BD

Abstract: TCD5240D
Contextual Info: TCD6220AF TCD5241BD, TCD5240D, TCD5251BD, TCD5250D TIMING PULSE GENERATING IC The CMOS LSI of TC6220AF was developed to drive thè TCD5241BD, TCD5251BD, TCD5240D and TCD5250D. The TC6220AF can be combined with a vertical clock driver to constitute the CCD area image sensor driving

Contextual Info: K0.:560 2>8600!>@DC K0$?F0 A?7:<670!>5DBCAH0*C2>52A50?C@A:>C K0<?32<0*276CH086>4H0?=@<:2>46 K0)? *0?=@<:2>C (90$2,(40(*.(/43020F11-+&$4+0/3 -:56?AD5:?0)?DC6AB 2C24?= (?:>C0?70*2<6 +6BC02>50%62BDA6=6>C $0*:8>B02>50$:89C:>8 1(*DB0*6A:6B D10G0E910DB.080

B2045

Contextual Info: K0.:560 2>8600!>@DC K0$?F0 A?7:<670!>5DBCAH0*C2>52A50?C@A:>C K0<?32<0*276CH086>4H0?=@<:2>46 K0)? *0?=@<:2>C &60"0*&20&(,&-21020D//+)$"2).-1 -:56?AD5:?0)?DC6AB 2C24?= (?:>C0?70*2<6 +6BC02>50%62BDA6=6>C $0*:8>B02>50$:89C:>8 1(*DB0*6A:6B D10G0E910DB.080

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

ZTX1053A

Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am

87C76

Contextual Info: 12345678429AB9C D7EFF 777844 12342567894A5B 5678429AB9C 12342567894C5DD5E B7A4A89A A89A 689 768A !" 679A64B89C649A#487787A76F 1 2 3 4 5 6 7 8 9 A B C D 8 E

FZT1053A

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 1 - SEPTEMBER 1997 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

BF 235

Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: >>>7D;9C5;8<2=35294?=A2< K1.:561 2>8611">@DC141B181EB1-15 K1?=@24C1*:I6131!:89177:4:6>4H K1 D2A2>C665181FBJ1*C2AC8,@

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

TRANSISTOR SE 135

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997_ ~ FEATURES * V CEO = -2 5 V * 3 A m p C o n tin u o u s C u rre n t * 10 A m p Pulse C u rre n t * L o w S a tu ra tio n V o lta g e

Contextual Info: Panasonic For Communications Equipment MN86074 Image Processing LSI • Overview The MN86074 boosts image quality by applying various image processing techniques to the analog signal from an image sensor. Features include correction of laser printer dot spreading at the pixel level, processing to

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables

Contextual Info: COS/MOS INTEGRATED CIRCUIT _ 4 i> s •=> 3 hcc/hcf «sise 4-BIT MAGNITUDE COMPARATOR • • • • • • • E X P A N S IO N T O 8, 12, 1 6 4 N B IT S B Y C A S C A D IN G U N IT S M E D IU M -S P E E D O P E R A T IO N : C O M P A R E S TW O 4 - B I T W O R D S IN 180 ns T Y P . A T 10V

ez 643

Abstract: SMBJ11CA EZ 644 SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA SMBJ8.5CA
Contextual Info: MCC TM Micro Commercial Components SMBJ5.0 THRU SMBJ440CA
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package

SMBJ11CA

Abstract: mcc marking code kd marking 722 NY ez 643 SMBJ130CA SMBJ14CA SMBJ16CA SMBJ6.5A SMBJ160CA SMBJ8.0A
Contextual Info: MCC TM Micro Commercial Components SMBJ5.0 THRU SMBJ440CA
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features For surface mount applicationsin or der to optimize boar d space L ow pr ofil e package

marking code mf

Abstract: marking mcc mx SMBJ11CA BU 508 AG marking DK SMB mcc kd 358 ez SMBJ130CA SMBJ14CA SMBJ16CA
Contextual Info: MCC TM Micro Commercial Components Features For surface mount applicationsin or der to optimize board space • SMBJ5.0 THRU SMBJ440CA
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates