BF 459 Search Results

Transistor B C 458

Abstract: c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458
Contextual Info: *BF 457 *BF 458 *BF 459 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR % Preferred device Dispositif recommandé BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature

BF-442

Abstract: bf442 hjst 5
Contextual Info: yÁül NO. BF-4400622 BF-4401222 BF-4402422 BF-4404822 B F-4410622 BF-4411222 BF-4412422 B F-4414822 BF-4420622 BF-4421222 BF-4422422 BF-4424822 y^SEE NOTE 1 I I I ! I i i 2.00 TYP-*j I I I I I I ! I I I I i I I I 1 I OBSOLETE PCB HOLES TO BE RESTED THROUGH HOLES.

BF 184 transistor

Abstract: BF457 bf459 IC 41 BF transistors 458
Contextual Info: BF 457 BF 458 SILICON P LA N A R NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec T O -1 26 plastic package. They are particularly intended fo r use as video o u tp u t stages in

transistor S104

Abstract: c 458 c transistor TRANSISTOR 2SC 458 Transistor B C 458 transistor c 458 s104 transistor BF458 transistor bf 458 S104 transistor 458
Contextual Info: 25C D • aZBSbOS 00044^5 T H S I E 6 ' r - i/ '- Z 'J BF 457 BF 458 BF 459 NPN Silicon RF Transistors SIEMENS A K TI EN GE SE LL SCH AF n.5 C 04495 fo r video and AF o u tp u t stages 6F 457, BF 458 and BF 459 are epitaxial NPN silicon planar transistors in TO 126 plastic

transistor bf 458

Abstract: transistor bf458 transistor bf 459
Contextual Info: 25C D • fl235b as 00044^5 T H S IE 6 ' rBF 457 BF 458 BF 459 NPN Silicon RF Transistors _"'-5C 0 4 4 9 5 SIE M E N S A K T IEN G ESE LLSC H A F for video and AF output stages BF 457, BF 4 58 and BF 4 5 9 are epitaxial NPN silicon planar transistors in TO 126 plastic

gk12

Abstract: 160i NPN transistor 458 BF459 BF457 BF458 sot326 gk12 f
Contextual Info: BF 459 SILICON PLANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The BF 4 5 7 , BF 4 5 8 and BF 4 5 9 are silicon planar epitaxial NPN transistors in Jedec T O -1 2 6 plastic package. They are particularly intended for use as video o utpu t stages in colour and black and w hite T V receivers, class A o utput stages and drivers for horizontal

TC4072BP

Abstract: 4 bit binary divider HIGH SPEED FREQUENCY DIVIDER TC5032P TC4584 7-stage frequency divider TC5000 tc4036 TC5001 TC4029BP
Contextual Info: TC4000 Series PRODUCT NAME FUNCTION PAGE TC4000BP DUAL 3 INPUT NOR GATE PLUS INVERTER 75 TC4001BP/BF QUAD 2 INPUT NOR GATE 80 TC4001UBP QUAD 2 INPUT NOR GATE 83 TC4002BP/BF DUAL 4 INPUT NOR GATE 80 TC4006BP 18-STAGE STATIC SHIFT REGISTER 86 TC4007UBP/UBF DUAL COMPLEMENTARY PAIR+INVERTER

bf5000

Contextual Info: '"’"Customer Information S h eep7 ^ RAW INCJta|_BF-50^ W 2 SH EET 2 OF 2 | IF IN DOUBT - ASK I (c | NOT TO S C A LE | THIRD ANGLE PROJECTION | A L L JgfMENSIONS IN — 17.05•13,60- PART No. BF-5000622 BF-5001222 B F-5002422 B F-5004822 B F - 5 0 10622

NE68019

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68019 Q1 Collector Base Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS UNITS Parameter seconds 0.64 capacitance farads inductance henries resistance ohms volts amps

Contextual Info: NONLINEAR MODEL NE667M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 ADDITIONAL PARAMETERS Parameters NE667M04 Parameters Q1 Parameters Q1 IS 2.75e-16 MJC 0.37 CCB 0.07e-12 BF 192.5

bjt 137

Abstract: 50E-12 NESG2030M16
Contextual Info: NONLINEAR MODEL NESG2030M16 CCB SCHEMATIC LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M16 IS 2.42e-13 MJC 0.16 CCB 0.04e-12 BF 500 XCJC 1

50E-12

Abstract: bjt 137
Contextual Info: NONLINEAR MODEL NESG2030M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M04 IS 2.42e-13 MJC 0.16 CCB 0.07e-12 BF

Contextual Info: NONLINEAR MODEL NE661M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE661M04 IS 2.2e-18 MJC 0.33 CCB 0.08e-12 BF 120 XCJC

Contextual Info: NE68730 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads

NE68839

Contextual Info: NONLINEAR MODEL NE68839 SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds Parameter Units BF 135.7 XCJC 0.56 capacitance

NE681M03

Abstract: var 431
Contextual Info: NONLINEAR MODEL SCHEMATIC NE681M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter time Units seconds IS 239.6e-18 MJC 0.223 BF 125 XCJC capacitance farads NF

058E-1

Contextual Info: NE68018 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC 0.64 UNITS Parameter Units time seconds BF 124.9 XCJC capacitance farads

NE68533

Abstract: 014e1
Contextual Info: NE68533 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 7e-16 MJC 0.34 time seconds BF 109 XCJC capacitance farads NF

Contextual Info: NE68833 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units seconds IS 3.8e-16 MJC 0.48 time BF 135.7 XCJC 0.56 capacitance

50E-12

Abstract: bjt microwave 15 GHz NE52418
Contextual Info: NONLINEAR MODEL NE52418 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE52418 IS 7.8e-25 MJC 0.07 CCB 0.02e-12 BF 158 XCJC

Contextual Info: NE68030 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 3.84e-16 MJC 0.64 BF 124.9 XCJC capacitance farads

2 GHz BJT

Abstract: 0415E
Contextual Info: NE68733 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads

ne85630

Abstract: 32E-16
Contextual Info: NONLINEAR MODEL SCHEMATIC NE85630 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68033 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 3.84e-16 MJC 0.64 time seconds BF 124.9 XCJC capacitance farads