BEAM BREAK Search Results

Contextual Info: Glenair Eye-Beam Fiber Optic System Glenair Eye-Beam™ Expanded Beam Fiber Optic Connection System „„ All the benefits of an expanded beam connection system built into a versatile F/O terminus „„ Factory-terminated F/O Eye-Beam™ termini easily integrated into any connector package

Contextual Info: Glenair Eye-Beam Fiber Optic System Glenair Eye-Beam™ Expanded Beam Fiber Optic Connection System „„ All the benefits of an expanded beam connection system built into a versatile F/O terminus „„ Factory-terminated F/O Eye-Beam™ termini easily integrated into any connector package

ARINC 763

Abstract: ARINC 600 CONNECTOR ASSEMBLIES arinc 600 size 3 connector ARINC 664 1515748-1 arinc 404 ARINC 600 FIBER 1515781-3 ARINC+763 ARINC 600 Connector
Contextual Info: PDF Datasheet 1654471 Revised 6-03 Only available as PDF at: Expanded Beam Ruggedized Fiber Optic Products Expanded Beam Products • PRO BEAM Sr. Connector and PRO BEAM® Jr. Connector field deployable

ARINC 763

Abstract: Radiall arinc 620 600 36F36 SAE-AS-13441 upc 1403 ARINC 664 Radiall arinc 600 620 ARINC Cavity Reducer Quadrax arinc 404 radiall Radiall arinc 600 620 900
Contextual Info: Fiber Optic Products Catalog Rugged Fiber Optic Products Product Facts • Expanded Beam ■ PRO BEAM Sr.Connectors ■ PRO BEAM Jr.Connectors ■ PRO BEAM Mini Connectors ■ Mini 38999 ■ Mini ARINC ■ Mini GPRC ■ LuxCis Optical Termini ■ One common terminus for

BU8332KV

Abstract: BU8332KV-M CSTCR4M0DG55B-R0
Contextual Info: Datasheet Beam-forming Signal Processing IC for Ultra-Directional Microphone BU8332KV-M ●General Description BU8332KV-M enables cardioid directivity through beam-forming technology using two omnidirectional microphones placed 10mm apart. Beam forming technology

cardioid microphone

Contextual Info: Datasheet Beam-forming Signal Processing IC for Ultra-Directional Microphone BU8332KV-M ●General Description BU8332KV-M enables cardioid directivity through beam-forming technology using two omnidirectional microphones placed 10mm apart. Beam forming technology

Contextual Info: Datasheet Beam-forming Signal Processing IC for Ultra- Directional Microphone Effect Automotive Grade BU8332KV-M ●General Description BU8332KV-M enables cardioid directivity through beam-forming technology using two omnidirectional microphones placed 10mm apart. Beam forming

Ultrasonic welding circuit

Abstract: DIODE 4005 hpnd pin 0.01 pF handling of beam lead diodes beam lead PIN diode Ablestik diode led ir Led-Diode data phase shift resistance welding HPND4005
Contextual Info: HPND- 4005 Beam Lead PIN Diode Data Sheet Description Features The HPND-4005 planar beam lead PIN diode is ­constructed to offer exceptional lead strength while achieving excellent elec­tri­cal performance at high ­frequencies. High beam strength offers users superior

MA40297

Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky B arrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • ISOPLANAR CONSTRUCTION BEAM STRENGTH EXCEEDS 10 GRAMS ■ PLANAR CONSTRUCTION (SURFACE ORIENTED DIODE) ■ EXTREMELY STRONG BEAM

ODS-1209

Abstract: MA46580 MA46580-1209 MA46585 MA46585-1209 Tuning Varactors
Contextual Info: RoHs Compliant Beam Lead Constant Gamma GaAs Tuning Varactor MA46580 & MA46585 V3 Features Absolute Maximum Ratings @ TA=+25 °C • Constant Gamma = 1.0 & 1.25 available • High Q 3000 minimum at 4V 50MHz • Strong Beam Construction (Minimum 10 gram beam strength)

MA4P800

Contextual Info: Silicon Beam Lead PIN Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are

MHT05

Abstract: OFMS1-10 IR 5M receiver OFMS1-05 npn transistor 60 volt infrared led receiver infrared emitter and receiver MHT 05
Contextual Info: Photoelectrics Through-beam Type MH • • • • • • • • • Product Description Self contained through-beam photoelectric switch. Range up to 5 m. Easy alignment through wide angle beam. Range: 5 m Easy alignment Modulated infrared light Rated operational voltage: 10 to 30 VDC

MA4P800

Contextual Info: AjÙ^m Silicon Beam Lead PIIM Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION 129 ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are

TRANSISTOR BC 748

Abstract: FSD - 1378 B h48 diode fsd 0165 k4-24v SF2-AA48-H SF2-AA18 bc 853 npn transistor transistor Bc 542 sf2-AH36
Contextual Info: SF2-A ORDER GUIDE Sensors Mating cable is not supplied with the sensor. Please order it separately. Type Beam channel No. 20 mm 0.787 in beam pitch Operating range Appearance 25 mm 0.984 in Protective height Beam pitch 20 mm 0.787 in 0.5 m 1.64 ft 25 mm 0.984 in

MQ-W70A-DC12-24V

Abstract: MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W20C-DC12-24VEM MQ-W20A-DC12-24V photoelectric through beam sensor circuit diagram MQ-W3C-DC12-24VEM MQ-W70C-DC12-24V triangulation position sensitive device
Contextual Info: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

gold metal detectors

Abstract: Microwave detector diodes 18 GHz IR 5340 Microwave detector diodes 5310 diode led ir Led-Diode HSCH-5330 diode 10e HSCH-5340 Datasheets
Contextual Info: HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors 1-26 GHz Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure

position sensitive device

Abstract: MQ-W20C-DC12-24VEM MQ-W70A-DC12-24V MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W3CR-DC12-24V MQ-W20 MQ-W20A-DC12-24V MQ-W3A-DC12-24V MQ-W3A-DC12-24VEM
Contextual Info: MQ-W Series TRIPLE BEAM TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

pulse metal detector

Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
Contextual Info: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

EN12453

Abstract: EN12978 EN12445 circuit Diagram of TV receiver PB18CNT15 PB18CNT15NC PB18CNT15NO PB18CNT15PC PB18CNT15PO Optical proximity sensor through beam
Contextual Info: Photoelectrics Through-beam, Transistor Output Type PB18CNT15. • • • • • • • • • Product Description The PB18CNT. is a through beam sensor set specific designed for safety edge sensing in industrial automatic doors. The housing is designed to

CTL5239-056-021

Contextual Info: 501-380 Qualification Test Report 28Feb06 Rev A Dual Beam Shunt 1. INTRODUCTION 1.1. Purpose | Testing was performed on the Tyco Electronics Dual Beam Shunt to determine its conformance to the requirements of Product Specification 108-1674 Rev. O. 1.2. Scope

ULM850-L2-PL-S0101U

Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Contextual Info: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated

A4029

Abstract: A4027
Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky Barrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • PLANAR CONSTRUCTION SURFACE ORIENTED DIODE ■ EXTREMELY STRONG BEAM CONSTRUCTION ■ HIGH PROCESS UNIFORMITY ■ LOW NOISE FIGURE (MIXER DIODES)

MA4E2037

Abstract: MA4E2039 M541 MA4E2040
Contextual Info: GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Package Outlines Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation

Contextual Info: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms