BE 555 Search Results

MBM29F160

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

single chip satellite multiswitch

Abstract: diseqc master diseqc schematic diagram receiver satellite schematic diagram receiver data circuit satellite MultiSwitch sat MAX12005 DISEQC SWITCH MAX12005ETM DISEQC SWITCH DATASHEET
Contextual Info: 19-5554; Rev 0; 9/10 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded

schematic diagram receiver data circuit satellite

Abstract: DISEQC SWITCH single chip satellite multiswitch diseqc schematic diagram receiver satellite diseqc master MultiSwitch sat lnb power step up ic 0x06 sat receiver
Contextual Info: 19-5554; Rev 1; 10/11 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded

4464 dram

Abstract: M30800MC-XXXFP M30802MC-XXXGP M30805FGGP M30805MG-XXXGP P4606 008b1 m5M28F102 P80P86 4464 64k dram
Contextual Info: Mitsubishi single-chip microcomputer M16C/80 Group User’s manual Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.

yageo R68 choke

Abstract: AL0510 al0204 AL0307 al-0410-st 585R AL0510ST
Contextual Info: YAGEO CORPORATION COILS CHOKE COILS AL TYPE AL TYPE Series FEATURES Design to be Compact, Small and Light-Weight Wide Range of Inductance Contribute to be High Q and Self-Resonant Frequencies Tapping type that is convenient for automatic inser tion. Coating Epoxy Resin That Ensure The Humidity Resistance to be Long Life

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE/BE 10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard

Marking code vacc

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

ma 5558

Contextual Info: THIS CRAVING CONTAINS INFORMATION THAT IS PROPRIETARY TO MOLEX JAPAN AND SHOULD NOT BE USED 11THOUT 1RITTEN PERMISSION m x j -8 5558.S32

Ignitron

Abstract: NL-5550 ignitron tube mercury ignitron 5550 ignitron tube ignitor Ignitron welding
Contextual Info: IGNITRON TUBE NL-5550 IGNITRON TUBE 22.4 Amperes de V N L-5550 is a mercury pool tube designed especially for resistance welding control. Its rating is approxima­ tely equivalent to a 150-ampere magnetic contactor. N L-5550 can be used to control 25-60 cycle AC at voltages of 250 to 600 volts. It can also be used to con­

NL-5550

Abstract: ignitron tube ignitor ignitron tube mercury
Contextual Info: 0 0 A JL'5 ‘5 5 0 NL-5550 IGNITRON TUBE 22.4 Amperes dc NL-5550 is a mercury pool tube designed especially for resistance welding control. Its rating is approxima­ tely equivalent to a 150-ampere magnetic contactor. NL-5550 can be used to control 25-60 cycle AC at voltages of 250 to 600 volts. It can also be used to con­

ultrasonic transducers 12V

Abstract: of ic2 ne555 40KHZ ULTRASONIC transducers ic2 ne555 ultrasonic 42 khz transducer ic1 ne555 Mercator 400et180 ic2 555 RC4558P 40khz ultrasonic transmitter 12V
Contextual Info: ULTRASONIC TRANSDUCERS 400ET180/400ER180 COMPONENTS THIS ENCLOSED TYPE TRANSDUCER CAN BE USED FOR OUTDOOR INSTALLATION OR IN A DUSTY ATMOSPHERE. IT IS NOT RECOMMENDED TO BE USED UNDER WATER — APPLICATIONS REMOTE CONTROL DEVICES PROXIMITY SENSORS ENERGY SAVING EQUIPMENT

MBM29F160BE-90

Abstract: MBM29F160BE90 FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE55/70/90 MBM29F160BE55/70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20911-1E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TE/BE-90/10 • DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages.

MBM29

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-1E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE/BE 70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

super chip

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TE/BE-90/10 • DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and xx-ball SCSP packages.

to1a transistor

Abstract: F38076W10 IP 8082 BL to1a transistor to1a F380 tsr 491 637 Nippon capacitors SPC31
Contextual Info: REJ09B0093-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/38076R Group Hardware Manual

KBU08

Abstract: ir receiver module sj 1838 rba9 h0075 8155 port ir receiver sj 1838 Nippon capacitors as11 ds hfe nv
Contextual Info: REJ09B0098-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2114RGroup Hardware Manual