BDY 11 Search Results

Contextual Info: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN

bdy82

Abstract: BDY83
Contextual Info: BDY 82 BDY 83 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E Compì, of BDY 80, BDY 81 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance

bdy56

Abstract: amplificateur BF amplificateur BF TCA BDY 56
Contextual Info: * BDY 55 * BDY 56 NPN SILICON TRANSISTORS, DIFFUSED MESA TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S H* P referred device D is p o s itif recommandé • LF large signal power amplification Am plification B F grands signaux de puissance Commutation rapide fo rt courant

2N3442

Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
Contextual Info: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«

EL 14v 4c

Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

h21e

Abstract: BDY80 BDY82 max-h21E BDY81
Contextual Info: BDY 80 BDY 81 NPN S ILIC O N TR A N S IS TO R S , HOM O BASE TR AN S IS TO R S NPN S IL IC IU M , H O M O B ASE Compì, o f B D Y 82 - BD Y 83 - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance /3 5 V 5 0 V • Switching

Kern Engineering

Abstract: Kern Engineering 50619 11932-4P04C-100 50619 4P07C-100 d-sub backshell Saddle clamp 13579
Contextual Info: REVISIONS LTR DESCRIPTION DATE ADDED 104 SHELL SIZE & TABLE 2 DIMS BDY SCR PART NO. IS: 11932-4P04C-100 WAS: 11932-4P08C-100 APPROVED 2 /2 8 /0 1 TAG 7 /2 5 /0 1 DW DEVELOPMENT S3101 25 C J s;l T SCREW LOCK TYPE 11932— 4P04C— 100 2 PL - S L = FILLISTER HEAD

Contextual Info: REVISION C SMB7H-J-P-XX-RA-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] TERMINATION -TH1: THROUGH HOLE ORIENTATION -RA: RIGHT ANGLE PLATING -HN: HEAVY GOLD/NICKEL SEE NOTE 6 & 7 (SMB7H-J-P-H-RA-TH1-PIN) (SMB7H-J-P-F-RA-TH1-SHL) (SMB7H-J-P-N-RA-TH1-BDY)

Contextual Info: REVISION A BNC7T-J-P-XX-ST-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -J: JACK TYPE -P: PCB DO NOT SCALE FROM THIS PRINT 18.00 .709 REF 11.00 .433 REF 4.50 .177 REF E -GN: GOLD/NICKEL SEE NOTES 7 & 8 (BNC7T-J-P-N-ST-TH1-BDY) (BNC7T-J-P-ST-TH1-INS)

Contextual Info: MHF1-P-C-X-RA-CA3 REVISION A DO NOT SCALE FROM THIS PRINT DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG TYPE -C: CABLE TERMINATION -CA3: RG-081 CABLE ORIENTATION -RA: RIGHT ANGLE PLATING SPECIFICATIONS -H: HEAVY GOLD SEE NOTE 6 & 7 (MHF1-P-C-H-RA-CA3-BDY)

Contextual Info: REVISION E SMB7H-J-P-XX-RA-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] TERMINATION -TH1: THROUGH HOLE ORIENTATION -RA: RIGHT ANGLE PLATING -HN: HEAVY GOLD/NICKEL SEE NOTE 6 & 7 (SMB7H-J-P-H-RA-TH1-PIN) (SMB7H-J-P-F-RA-TH1-SHL) (SMB7H-J-P-N-RA-TH1-BDY)

Contextual Info: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn­ zeichnet. Für folgende Arbeitspunkte gilt:

ESM750A

Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Contextual Info: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183

Contextual Info: REVISION A MHF3-P-C-X-RA-CA3 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG TYPE -C: CABLE DO NOT SCALE FROM THIS PRINT TERMINATION -CA3: RG-081 CABLE ORIENTATION -RA: RIGHT ANGLE PLATING SPECIFICATIONS -H: HEAVY GOLD SEE NOTE 6 & 7 (MHF3-P-C-H-RA-CA3-BDY)

BDY12

Abstract: BDY13 BDY12-10 BDY12-16 BDY12-6 BDY13-16 Q60204-Y13-D bcy13
Contextual Info: BDY 12, B D Y 13 NPN Transistors for AF output stages and switching applications B D Y 1 2 and B D Y 1 3 are epitaxial N P N silicon planar power transistors in a case 9 A 2 D IN 41 875 SO T-9 . The collector is electrically connected to the case. In order that the transistors may be mounted insulated from the chassis, 1 mica disc

2N3054

Abstract: Emetteur 2N 3054 BDY 276 3054
Contextual Info: 2f\l 3 0 5 4 * BDY 71 NPN S ILIC O N TR A N S IS TO R S , HOMOBASE T R A N S IS TO R S N P N S IL IC IU M , H O M O B ASE 2N 3054 compì, of B D X 14 Preferred device D is p o s itif re com m andé LF large signal power amplification A m p lific a tio n B F grands signaux de puissance

BDY39

Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
Contextual Info: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1

BDY25

Abstract: 180T2 181T2 182T2 BDY 11 T2140 BDY23 BDY24 p 181 V BDV25
Contextual Info: *B D Y 23/I80T2 *BDY24 181T2 *B D Y 25,182 T2 NPN S IL IC O N T R A N S IS T O R S , D IF F U S E D M E S A T R A N S IS T O R S N P N S IL I C I U M , M E S A D IF F U S E S % Preferred device D isp o sitif recommandé' L F large signal pow er a m p lifica tio n

BD NPN transistors

Abstract: pro-electron BLX83 Scans-00147652 BD130
Contextual Info: r e » ? ©ättä[l® P R O -E L E C T R O INI P O W E R T R A N S IS T O R S DEVICE POLARITY TYPE IC(cont. MAX AMPS ic Devices. Inc. VCEO MAX VOLTS JiFE @ MIN/MAX VCE(sat)@ MAX/VOLTS ic AMPS It MIN(MHz) Px MAX. WATTS CA SE TYPE CHIP TYPE BD 130 BD 142

Q60204-Y12-B

Abstract: BDV13 Q60204-Y13-D BDY12 BDY13 Q62901-B16-A 510Z5
Contextual Info: NPN-Transistoren für NF-Endstufen und Schalteranwendungen BDY12 BDY13 B D Y 1 2 und B D Y 1 3 sind epitaktische NPN-Silizium-Planar-Leistungstransistoren im Gehäuse 9 A 2 DIN 41 875 S O T -9 . Der Kollektor ist mit dem Gehäuse elektrisch ver­ bunden. Für die isolierte Befestigung der Transistoren auf einem Chassis sind je 1 Glimmer­

LTLS

Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs

TC-400-NMH-D

Abstract: RFN-1005-3C RFN-1027 rfn-1023 Andrew rg-58 connector RFN-1002-1N RFN-1006-3I BELDEN 8242 RFN-1013-1 RFN-1007-2SX
Contextual Info: N male N female specifications ELECTRICAL SPECIFICATIONS Impedance: 50 Ω Working voltage rating: 1,000 VRMS, cable dependent Frequency range: 0-11 GHz MECHANICAL SPECIFICATIONS Mating: 5/8 - 24 threaded coupling Interface: MIL-STD-348, Section 304 Cabling: Clamp, solder and crimp

MS39012

Abstract: RFT-1226 BARREL ADAPTER N FEMALE TO N FEMALE rft-1242 RFT-1229 RFT1233 equivalent bdy 29 221500-1 rft1234 RFT-1232
Contextual Info: TNC Adapters plating SPECIFICATIONS Body: C - Black Chrome TNC FIG. 1 RFE-6108 N - Nickel pin/contact: G - gold FIG. 2 RFE-6109 FIG. 5 RFT-1225 FIG. 7 RFT-1227, LF FIG. 8 RFT-1228 FIG. 11 RFT-1231 FIG. 10 RFT-1230 FIG. 13 RFT-1233 FIG. 4 RFT-1224 FIG. 3 RFE-6155

bux c

Abstract: BUX23 BUW38 ESM750A BUV18 ESM750 ESM952A BUV19 BUX13 BUX42
Contextual Info: lc sat est valeur du courant collecteur de fonctionnement recommandée. Les temps de commutation fw, tr, ts et t f et la tension de saturation collecteur-émetteur VcfYsafV sont j _ i . '_ j i s^cror/m uaiid //i/d tivm,co a i ç (sat)" rO Cn SUPERSWITCH transistor TO-3 selector guide