BDY 11 Search Results

Contextual Info: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN

bdy82

Abstract: BDY83
Contextual Info: BDY 82 BDY 83 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E Compì, of BDY 80, BDY 81 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance

bdy56

Abstract: amplificateur BF amplificateur BF TCA BDY 56
Contextual Info: * BDY 55 * BDY 56 NPN SILICON TRANSISTORS, DIFFUSED MESA TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S H* P referred device D is p o s itif recommandé • LF large signal power amplification Am plification B F grands signaux de puissance Commutation rapide fo rt courant

2N3442

Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
Contextual Info: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«

EL 14v 4c

Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

h21e

Abstract: BDY80 BDY82 max-h21E BDY81
Contextual Info: BDY 80 BDY 81 NPN S ILIC O N TR A N S IS TO R S , HOM O BASE TR AN S IS TO R S NPN S IL IC IU M , H O M O B ASE Compì, o f B D Y 82 - BD Y 83 - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance /3 5 V 5 0 V • Switching

Contextual Info: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn­ zeichnet. Für folgende Arbeitspunkte gilt:

ESM750A

Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Contextual Info: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183

3771

Abstract: 2N3771 3772-BDY emetteur 3772 2n3772 N3771 sbru BDY76 AL710
Contextual Info: *2 N 3771 *2 N 3772 * BDY 76 NPN SILICON TRANSISTORS, HOMOBASES T R A N S IS T O R S N P N S IL IC IU M , H O M O B A SE S Preferred device Dispositif recommandé • LF large signal power amplification 40 V 160 V (20 A \3 0 A 150 W VCEO Amplification B F grands signaux de puissance

BDY12

Abstract: BDY13 BDY12-10 BDY12-16 BDY12-6 BDY13-16 Q60204-Y13-D bcy13
Contextual Info: BDY 12, B D Y 13 NPN Transistors for AF output stages and switching applications B D Y 1 2 and B D Y 1 3 are epitaxial N P N silicon planar power transistors in a case 9 A 2 D IN 41 875 SO T-9 . The collector is electrically connected to the case. In order that the transistors may be mounted insulated from the chassis, 1 mica disc

2N3054

Abstract: Emetteur 2N 3054 BDY 276 3054
Contextual Info: 2f\l 3 0 5 4 * BDY 71 NPN S ILIC O N TR A N S IS TO R S , HOMOBASE T R A N S IS TO R S N P N S IL IC IU M , H O M O B ASE 2N 3054 compì, of B D X 14 Preferred device D is p o s itif re com m andé LF large signal power amplification A m p lific a tio n B F grands signaux de puissance

BDY39

Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
Contextual Info: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1

BDY25

Abstract: 180T2 181T2 182T2 BDY 11 T2140 BDY23 BDY24 p 181 V BDV25
Contextual Info: *B D Y 23/I80T2 *BDY24 181T2 *B D Y 25,182 T2 NPN S IL IC O N T R A N S IS T O R S , D IF F U S E D M E S A T R A N S IS T O R S N P N S IL I C I U M , M E S A D IF F U S E S % Preferred device D isp o sitif recommandé' L F large signal pow er a m p lifica tio n

Q60204-Y12-B

Abstract: BDV13 Q60204-Y13-D BDY12 BDY13 Q62901-B16-A 510Z5
Contextual Info: NPN-Transistoren für NF-Endstufen und Schalteranwendungen BDY12 BDY13 B D Y 1 2 und B D Y 1 3 sind epitaktische NPN-Silizium-Planar-Leistungstransistoren im Gehäuse 9 A 2 DIN 41 875 S O T -9 . Der Kollektor ist mit dem Gehäuse elektrisch ver­ bunden. Für die isolierte Befestigung der Transistoren auf einem Chassis sind je 1 Glimmer­

MS39012

Abstract: RFT-1226 BARREL ADAPTER N FEMALE TO N FEMALE rft-1242 RFT-1229 RFT1233 equivalent bdy 29 221500-1 rft1234 RFT-1232
Contextual Info: TNC Adapters plating SPECIFICATIONS Body: C - Black Chrome TNC FIG. 1 RFE-6108 N - Nickel pin/contact: G - gold FIG. 2 RFE-6109 FIG. 5 RFT-1225 FIG. 7 RFT-1227, LF FIG. 8 RFT-1228 FIG. 11 RFT-1231 FIG. 10 RFT-1230 FIG. 13 RFT-1233 FIG. 4 RFT-1224 FIG. 3 RFE-6155

bux c

Abstract: BUX23 BUW38 ESM750A BUV18 ESM750 ESM952A BUV19 BUX13 BUX42
Contextual Info: lc sat est valeur du courant collecteur de fonctionnement recommandée. Les temps de commutation fw, tr, ts et t f et la tension de saturation collecteur-émetteur VcfYsafV sont j _ i . '_ j i s^cror/m uaiid //i/d tivm,co a i ç (sat)" rO Cn SUPERSWITCH transistor TO-3 selector guide

TESLA KU 602

Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Contextual Info: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente

2N 3055

Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
Contextual Info: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

transistor Amp 3055

Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@

8 pin ic 3773

Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442

WIRING diagram USB to rca CABLE

Abstract: RFU-531 ldf4-50a belden nokia 1280 circuit diagram free L1PNM-H taiko relay Intercomp 1-4082x RFB-1135-T radiall 617 320 Solitron product catalog
Contextual Info: RF Connectors Division of of RF RF Industries Industries AA Division 1-800-233-1728 CD Available on 7610 Miramar Road, San Diego, CA 92126-4202 • 858 549-6340 • (800) 233-1728 Fax (858) 549-6345 • email: rfi@rfindustries.com • website: rfindustries.com

Contextual Info: PI3HDMI1421 HDMI Revision 1.4 Compliant 2:1/1:2 Mux/Demux Features Description ÎÎ Compliant with HDMI 1.4a speciication up to 3.4 Gbps PI3HDMI1421 is industries lowest power HDMI mux/demux supporting up to 3.4Gbps signal throughput per channel. the PI3HDMI1421 supports switching all TMDS channels, HPD channel, and the DDC channels. he part can behave as 1:2 demux

depth sounder

Abstract: Piezo sounder cb14bd CB29B CB23BD CB210BZ24T CB40W Sounder CB210BZ-T cb22wd
Contextual Info: SOUNDERS SOUNDERS, Piezo-electric SOUNDERS built-in drive A wide range of piezo sounders, each with a built-in drive circuit, for direct operation from low voltage dc supplies. High pitched sound output and low power consumption. Offer a varied choice of popular styles and mounting, separated into two size groups. All types have continuous