BDW84C Search Results

BDW83

Abstract: BDW83A BDW83C BDW83D BDW83B BDW84 BDW84A BDW84B BDW84C BDW84D
Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature

BDW84C

Contextual Info: BDW84C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BDW 65 C

Contextual Info: SGS-THOMSON BDW83C BDW84C RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE . COMPLEMENTARY PNP - NPN DEVICES . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED . HIGH DC CURRENT GAIN

BDW84C

Abstract: BDW84D
Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature

bdw83

Abstract: BDW83C
Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A

TRANSISTOR Bdw84d

Abstract: BDW84 BDW83 BDW83A BDW83B BDW83C BDW83D BDW84A BDW84B BDW84C
Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A

BDW83C

Abstract: Power Innovations BDW84 BDW84C TRANSISTOR D 1978 BDW83 BDW83A BDW83B BDW83D BDW84A
Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 150 W at 25°C Case Temperature

Contextual Info: BDW84C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

MN2488

Abstract: T0220 T0126 MJ11033-MOT 2SD2390 mn2488 pnp BCV27 BCV47 BD678 BSP61
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no HanpflweHMro Kofl: BCV27 MPSA64 BC516 BD675A BD678 BSP61 TIP125 BCV47 BD648 BD680 BD680A MJ2501 2N6287 2SB1020 BD682 BD712 BD902 BDV64B BDW84C

BDW83C

Abstract: BDW84C BDW83
Contextual Info: BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL

BOW83

Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited. UK • AUGUST 1878 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D • 150 W at 2S°C Case Temperature

TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

R3381

Abstract: R3498 R3381-S a101 transistor BDW85-S buv49 transistor 1015 TIPL763 TIC263D 883 transistor
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change

MJ3001 equivalent

Abstract: 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

2SA1046

Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and

mj15003 equivalent

Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

2SC2246

Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,

transistor 2SA1046

Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V

BU108

Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage

2SC1943

Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

mj150* darlington mj15002

Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284

IR642

Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —

2SA1046

Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.