BDW 65 C Search Results

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

BDW 65 C

Abstract: BDW93C 94B DIODE BDW94B BDW94C BDW93B bdw93c applications Darlington npn
Contextual Info: BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

BDW 16.24K5000-C2-5

Contextual Info: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

3055t

Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Contextual Info: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115

BE 64A

Abstract: BDW 64 BDw 32
Contextual Info: BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D • 60 W at 25°C Case Temperature

Contextual Info: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D • 40 W at 25°C Case Temperature

ED 83A

Abstract: BDW83B BDW83d
Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D • 150 W at 25°C Case Temperature

Bow94c

Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

BDW84C

Abstract: BDW84D
Contextual Info: BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

tip 220

Abstract: BDW 65 C TIP 122 127 tip 130 TIP 122 tip 127 803 SGS B0680 BDX54S BDX53 SGS TO 220
Contextual Info: f Z J SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOtíMIILIOTtMOtÉS POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS 30 A, VQEO : 45 — 180 V Epitaxial base - Ic m : 2 Internal schematic diagrams NPN and PNP types Medium V q e o range 45 to 180 V

bow94c

Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

TDA7250

Abstract: TDA7250 application note tip 142 or 147 equivalent tda7250 TRANSISTOR BDX DIP20 bdw 36
Contextual Info: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR

TDA7250

Abstract: TRANSISTOR BDX 53 tip 142 TDA7250 application note equivalent tda7250 tip 147 TRANSISTOR equivalent BDW 38 transistor tip147 TRANSISTOR BDX DIP20
Contextual Info: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR

TDA7250

Abstract: TDA7250 application note DIP20 tip147 inp transistor TRANSISTOR BDX 53
Contextual Info: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR

BDW 65 C

Contextual Info: SGS-THOMSON BDW83C BDW84C RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE . COMPLEMENTARY PNP - NPN DEVICES . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED . HIGH DC CURRENT GAIN

Contextual Info: r Z Z SGS-THOMSON [¡Ä^ [iyi©ra [ii©s TDA7250 60 W HI-FI DUAL AUDIO DRIVER • WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V + 10 to + 45 V ■ VERY LOW DISTORTION ■ AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE

BDW 65 C

Abstract: BDW 38 10AHF BDW93CFP BDW94CFP 93CFP 94CFP
Contextual Info: BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED ISOLATED PACKAGE

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

BDX 625

Abstract: BUX 115 BD 896 898A D896 BD PNP BD900 BD902
Contextual Info: TE XA S IN S T R -COPTO} ~k2 QQBLbOS A i 62C 36605 BD896, BD896A,BD898, BD898A, BD900, BD900A, BD902 P-N-P SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 ' " . V — 70 W a t 2 5 ° C Case Temperature T -3 3 -3 1 8 A Continuous Collector Current Min Hf E of 7 5 0 at 3 A or 4 A

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*