BDW 34 A Search Results

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

Bow94c

Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

bow94c

Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

philips 3h1 ferrite material

Abstract: ferroxcube handbook old ferrite ferroxcube Ee core 3H1 ferroxcube philips ferroxcube 4c65 ferroxcube 3E1 3h1 ferrite material philips 3f3 ferrite philips 3f3 ferrite toroid philips p14/8 3h1
Contextual Info: PRODUCT SELECTION GUIDE 2001 A Y AG E O C O M PA N Y List of contents page This Selection Guide offers an overview of the product ranges made by FERROXCUBE It contains short-form data for quick selection by development engineers and offers an overview for

Selection Guide

Abstract: FERROXCUBE ferroxcube 31 toroid core SP 5001 IC INVERTER inverter ccfl SP 5001 IC INVERTER ferroxcube handbook old ferrite philips etd34 ferrite part number Rod 3B1 smooth l 7251 3.1 etd29 14 pin vertical bobbins
Contextual Info: PRODUCT SELECTION GUIDE 2003 A Y A G E O C O M P A N Y List of contents List of contents continued page page General introduction Application matrix 2 8 Power conversion and Signal processing Materials and applications Bobbins and accessories Integrated Inductive Components (IIC)

ds1255

Abstract: DS1255Y
Contextual Info: DS1265 Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1 265Y/ AB 8M Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC 11 A18 I 1

l5832

Contextual Info: 3QE r Ä z 7 7 # » • 7T2SS37 0021^0 T ■ S C S -T H O M S O W G *fô m iO T [il@ S " i^ P S Z -ÌV ^ S L 5 8 3 2 SOLENOID CONTROLLER ■ DRIVES ONE OR TWO EXTERNAL DARLING­ TONS ■ DUAL AND SINGLE LEVEL CURRENT CONTROL ■ SWITCHMODE CURRENT REGULATION

Contextual Info: November 1996 Micro Linear ML4532, ML4533, ML4536 ^ Servo Burst Area Detector GENERAL DESCRIPTION FEATURES The ML4532 and ML4533 Area Detectors are designed to minimize the pipeline transport delay while accurately quantizing the area of servo bursts in high­

BA1355

Abstract: DS2251-64-12 dallas 32k timekeeping nvram
Contextual Info: DALLAS SEMICONDUCTOR DS2251 T 128K Soft Microcontroller PACKAGE OUTLINE FEATURES • 8051 compatible uC adapts to its task - 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage In-system programming via on-chip serial port Capable of modifying its own program or data

sg 6822

Abstract: TLO 721 PKF 2611 PI hep 230 PKF2611SI HEP 580 Ericsson TN R4 ericsson pkf
Contextual Info: DC/DC Power Modules 6 W PKF 2000 I • SWD and thraxfhhdev&scns with ultra Icwarrpcmit hecfit <8.0 rrm 0.315 in • 84% éfió&xy(typat5V) • 1,500 Vdei3daticn vdtacp • S lid in g frequffxy ^m aizaticn • MTBF>4.9m'llicnhcLrsat +50 °Cpn t&rparatLre(+40 °C

EV10AQ190AVTPY

Abstract: EV10AQ190 EV10AQ190A EV10AQ190AVTP EV10AQ190ACTPY dioda a4N
Contextual Info: EV10AQ190A Low power QUAD 10-bit 1.25 Gsps ADC Operating up to 5 Gsps Datasheet Main Features • Quad ADC with 10-bit Resolution Using e2v Proprietary Analog • • • • • • • • • • Input Cross-point Switch – 1.25 Gsps Sampling Rate in Four-channel Mode

EV10AQ190

Abstract: 10E2V
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Operating up to 5 Gsps Datasheet Main Features • Quad ADC with 10-bit Resolution Using e2v Proprietary Analog • • • • • • • • • • Input Cross-point Switch – 1.25 Gsps Sampling Rate in Four-channel Mode

EV10AQ190

Abstract: EV10AQ190VTPY BAI 59 DIODE
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Operating up to 5 Gsps Datasheet Main Features • Quad ADC with 10-bit Resolution Using e2v Proprietary Analog • • • • • • • • • • Input Cross-point Switch – 1.25 Gsps Sampling Rate in Four-channel Mode

12v 200W AUDIO booster CIRCUIT DIAGRAM

Abstract: TR359 schematic SMPS 12V PTC C851 SFR16t TDA8447 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistor for horizontal deflection output new bright R266 TU305B2
Contextual Info: APPLICATION NOTE CCM433 Autosync Monitor AN00033 Philips Semiconductors TP97035.2/W97 Philips Semiconductors CCM433 Autosync Monitor Application Note AN00033 Abstract The CCM433 demo monitor is an auto sync 17" high-end colour monitor. Its extensive geometry control and excellent video performance with a high

EV8AQ160

Abstract: BAI 59 DIODE
Contextual Info: EV8AQ160 QUAD ADC Datasheet Main Features • Quad ADC with 8-bit Resolution • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode – 5 Gsps Sampling Rate in One-channel Mode – Built-in four-by-four Crosspoint Switch

LT5233

Abstract: bt458 C458 TR C458 L75A FR52 RS-343 RS-343A C32-33 amd k10
Contextual Info: A D V A N C E D MI CR O D E V I C E S 2ÔE D ^ • 0257555 0G3SG55 1 ■ AMD Am81C451/458 ^ 2S:< CMOS Color Palette PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • • • Plug-In Replacement for Bt451 Bt450 Available in 80-, 110-, 125-, 165-MHz versions

LFE3-95EA-7FN672CES

Abstract: Scatter-Gather wishbone interface wishbone HB1009 modelsim SE 6.3f user guide IPUG67
Contextual Info: Scatter-Gather Direct Memory Access Controller IP Core User’s Guide October 2010 IPUG67_01.6 Table of Contents Chapter 1. Introduction . 4

AN4256

Abstract: "Video RAM" KM4216C256 KM4216V256 512x512x16
Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port