BDW 34 A Search Results

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

ds1255

Abstract: DS1255Y
Contextual Info: DS1265 Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1 265Y/ AB 8M Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC 11 A18 I 1

l5832

Contextual Info: 3QE r Ä z 7 7 # » • 7T2SS37 0021^0 T ■ S C S -T H O M S O W G *fô m iO T [il@ S " i^ P S Z -ÌV ^ S L 5 8 3 2 SOLENOID CONTROLLER ■ DRIVES ONE OR TWO EXTERNAL DARLING­ TONS ■ DUAL AND SINGLE LEVEL CURRENT CONTROL ■ SWITCHMODE CURRENT REGULATION

BA1355

Abstract: DS2251-64-12 dallas 32k timekeeping nvram
Contextual Info: DALLAS SEMICONDUCTOR DS2251 T 128K Soft Microcontroller PACKAGE OUTLINE FEATURES • 8051 compatible uC adapts to its task - 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage In-system programming via on-chip serial port Capable of modifying its own program or data

VL VM VH lithium

Contextual Info: D S 1486/D S1486P PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1486/DS1486P RAMified Watchdog Timekeeper PIN ASSIGNMENT • 128K bytes of user NV RAM • Integrated NVS R AM , real time clock, crystal, p o w e rfail control circuit and lithium energy source

sg 6822

Abstract: TLO 721 PKF 2611 PI hep 230 PKF2611SI HEP 580 Ericsson TN R4 ericsson pkf
Contextual Info: DC/DC Power Modules 6 W PKF 2000 I • SWD and thraxfhhdev&scns with ultra Icwarrpcmit hecfit <8.0 rrm 0.315 in • 84% éfió&xy(typat5V) • 1,500 Vdei3daticn vdtacp • S lid in g frequffxy ^m aizaticn • MTBF>4.9m'llicnhcLrsat +50 °Cpn t&rparatLre(+40 °C

EV10AQ190AVTPY

Abstract: EV10AQ190 EV10AQ190A EV10AQ190AVTP EV10AQ190ACTPY dioda a4N
Contextual Info: EV10AQ190A Low power QUAD 10-bit 1.25 Gsps ADC Operating up to 5 Gsps Datasheet Main Features • Quad ADC with 10-bit Resolution Using e2v Proprietary Analog • • • • • • • • • • Input Cross-point Switch – 1.25 Gsps Sampling Rate in Four-channel Mode

EV10AQ190

Abstract: 10E2V
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Operating up to 5 Gsps Datasheet Main Features • Quad ADC with 10-bit Resolution Using e2v Proprietary Analog • • • • • • • • • • Input Cross-point Switch – 1.25 Gsps Sampling Rate in Four-channel Mode

LT5233

Abstract: bt458 C458 TR C458 L75A FR52 RS-343 RS-343A C32-33 amd k10
Contextual Info: A D V A N C E D MI CR O D E V I C E S 2ÔE D ^ • 0257555 0G3SG55 1 ■ AMD Am81C451/458 ^ 2S:< CMOS Color Palette PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • • • Plug-In Replacement for Bt451 Bt450 Available in 80-, 110-, 125-, 165-MHz versions

AN4256

Abstract: "Video RAM" KM4216C256 KM4216V256 512x512x16
Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

predistorter

Abstract: ISL5217 ISL5239 ISL5239EVAL1 ISL5239KI ISL5239KIZ ISL5929 ISL5961 notes on window type air conditioner AHW MARKING CODE
Contextual Info: ISL5239 Data Sheet September 2, 2005 FN8039.2 Pre-Distortion Linearizer Features The ISL5239 Pre-Distortion Linearizer PDL is a full featured component for Power Amplifier (PA) linearization to improve PA power efficiency and reduce PA cost. • Output Sample Rates Up to 125MSPS

"Video RAM"

Contextual Info: KM4216C/V255 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 C M OS DRAM. The RAM port has a write per bit m ask capability. * Dual port Architecture 256K x 16 bits RAM port

256x16* STATIC RAM

Abstract: 10 35L W9 10 35L W1 10 35L W8 sc 4145 KM4216C256 KM4216V256 74143 10 35L a8 capacitor 0051142
Contextual Info: CMOS VIDEO RAM KM4216C/V256 2 56K X 16 B it CMOS Video HAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

ISL5217

Abstract: ISL5239 ISL5239EVAL1 ISL5239KI ISL5929 ISL5961
Contextual Info: ISL5239 Data Sheet June 2002 Pre-Distortion Linearizer The ISL5239 Pre-Distortion Linearizer PDP is a full featured component for Power Amplifier (PA) linearization to improve PA power efficiency and reduce PA cost. FN8039.0 device provides programmable scaling and offset correction,

"Video RAM"

Abstract: KM4216V256 KM4216C256
Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents