BD649 Search Results

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

bd648

Abstract: bd652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: 3 4 DRAWING TH IS MADE DRAWING IN 15 THIRD ANGLE UNPUBLISHED COPYRIGHT RELEASED 19 2 PROJECTION BY ANP FOR PUBLICATION I N CORPORAT ED. ALL INTERNATIONAL RIGHTS D I ST LOC 19 BD RESERVED. R E V I 5 I ON' 48 ZONE DESCRIP TIO N LTR D APPD 9-18-89 PER ECN BD6498

B0643

Abstract: d 17275 BD649C
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

BD647

Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

BD646

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

b0652

Abstract: BD648 BD652 bd650
Contextual Info: BD646, BD648, BOSSO, BD652 PNP SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations Limited. UK_ MAY 1993-REVISED MARCH 1997 • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature

BD649

Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.

Contextual Info: BD649F Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.750

bd643f

Contextual Info: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature

MAX2XX

Abstract: BD645 BD646 BD648 BD649 BD650 BD651 BD652 sb 649 a 2 sb 647
Contextual Info: BD645; 647 BD649; 651 SILICON DARLINGTON POWER TRANSISTORS N-P-N e p ita x ia l base tran sistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g a p p lica tio n s; T 0 -2 2 0 plastic envelope. P-N-P co m p le m en ts are B D 646, B D 648,

B0647

Abstract: B0645 bd649 TAG 064
Contextual Info: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

BD646F

Abstract: BD649F BD650F BD643F BD648F BD652F 651F
Contextual Info: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.

BD645

Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

transistor bd647

Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

transistor bd650

Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BD648

Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BOW93C

Abstract: box33c BOV65B B0701 b0651 BOT63B BOX83C BOX63B BOW83C bow530
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) Po Max (W) hFE Min fT Max (HZl leBO Max (A) t, tf Max (8) Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 2501196 B0267B B0267B 2501230 BD649

Contextual Info: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA