BD233 T Search Results

60V transistor npn 1a

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V

bd237

Abstract: BD233 BD235
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage BD233 : 45

bd233 rthj-c

Abstract: npn transistors,pnp transistors BD233 BD234 BD235 BD236 BD237 BD238
Contextual Info: IL BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B

bd237

Abstract: BD233
Contextual Info: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units

Plastic-Encapsulate Transistors

Abstract: BD233 417 TRANSISTOR BD237-10 BD235 BD237 IC 7400 7400 IC symbol transistor TO-126 Outline Dimensions
Contextual Info: TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45

IC 7400

Abstract: BD233 BD237 BD235 7400 IC symbol bd233 equivalent bd237 equivalent
Contextual Info: BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 BD237 Unit Collector-Emitter Voltage VCBO 45 60 100 V Collector-Base Voltage VCEO 45

cb 237

Abstract: BD235 bd233
Contextual Info: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS

BD237

Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
Contextual Info: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

BD237

Abstract: BD235 BD233 BD234
Contextual Info: SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD234 /236 /238 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1

bd238 equivalent

Abstract: BD238 BD236 BD234
Contextual Info: Inchange Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD233/235 /237 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

bd238

Abstract: BD236 BD234 bd238 equivalent
Contextual Info: SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD233

Abstract: BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES yComplement to BD 234/236/238 respectively MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

BD233

Abstract: BD234 BD237 BD235 BD236 BD238 CDIL BD238 238r BD233-BD234 CDIL BD233
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80

bd234

Contextual Info: BD234; BD236; BD238 _ _ y v SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. N-P-N complements are BD233,

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

Contextual Info: _ y \ _ BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation 1.25 PCM: 2. COLLECTOR W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO:

Contextual Info: <£s.tni-C,ond\icko\ fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD233/235/237 TRANSISTOR(NPN) n$*r rflMlpatlori \- TO-126 j ICH- 2 A 1. EMITTER i ] I i i El 1 2! 3 PCM: 1.25W(Tamb=25t)

BD237 toshiba

Contextual Info: TOSHIBA {DIS CR ETE/O PT O} Sb D E ^ T D ^ a S D 00DÖG74 BD233 BD235 IBD237I SILICON NPN EPITAXIA L BASE M ESA TYPE 9097250 TOSHIBA <DI S C R E T E /O P T O > 5òC 08074 □'' T - 3 3 ~ AUDIO POWER AMPLIFIER APPLICATIONS. Unit in tnm 7. 9 MAX. VERTICAL DEFLECTION OUTPUT.APPLICATION IN TV.

BD235 PHILIPS

Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its

BD233

Abstract: FT501
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs