BD233 Search Results

BD235 PHILIPS

Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its

IC 7400

Abstract: BD233 BD237 BD235 7400 IC symbol bd233 equivalent bd237 equivalent
Contextual Info: BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 BD237 Unit Collector-Emitter Voltage VCBO 45 60 100 V Collector-Base Voltage VCEO 45

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • BD233 BD235 BD237 Power Dissipation: PCM =1.25W, Ta=25ć Collector Current : IC=2A

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃

bd237

Abstract: bd235 datasheet BD234
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃

BD235 PHILIPS

Abstract: bd234c BD234 Philips
Contextual Info: BD234; BD236; BD238 PHILIPS INTERNATIONAL 5bE D • 711002b 0D42öb2 ATI ■ P H I N SILICON EPITAXIAL-BASE P O W E R TRANSISTORS P-N-P tra n sis to rs in a SOT-32 plastic envelope intended for use in television and audio am plifier c irc u its where high peak pow ers can occur. N-P-N complements a re BD233,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation 1.25 PCM: 2. COLLECTOR W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO:

Contextual Info: <£s.tni-C,ond\icko\ fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD233/235/237 TRANSISTOR(NPN) n$*r rflMlpatlori \- TO-126 j ICH- 2 A 1. EMITTER i ] I i i El 1 2! 3 PCM: 1.25W(Tamb=25t)

bd238 equivalent

Abstract: BD238 BD236 BD234
Contextual Info: Inchange Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD233/235 /237 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

bd233

Contextual Info: MCC TM Micro Commercial Components BD233 BD235 BD237
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"

BD237

Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
Contextual Info: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

BD233

Abstract: BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR
Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V C ollector Base Voltage

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic BD234 BD236 BD238 Collector Emitter Voltage BD234 BD236 BD238 Collector Emitter Voltage BD234

Circuit details of BD237 equivalent

Abstract: bd237 equivalent NPN pnp MATCHED PAIRS to126 case BD234 BD233 BD235 BD236 BD237 BD238
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

BD237 toshiba

Contextual Info: TOSHIBA {DIS CR ETE/O PT O} Sb D E ^ T D ^ a S D 00DÖG74 BD233 BD235 IBD237I SILICON NPN EPITAXIA L BASE M ESA TYPE 9097250 TOSHIBA <DI S C R E T E /O P T O > 5òC 08074 □'' T - 3 3 ~ AUDIO POWER AMPLIFIER APPLICATIONS. Unit in tnm 7. 9 MAX. VERTICAL DEFLECTION OUTPUT.APPLICATION IN TV.

BD237

Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
Contextual Info: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

Contextual Info: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • • • BD233 BD235 BD237
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"

BD233

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃ Collector Current : IC=2A

bd238

Abstract: BD236 BD234 bd238 equivalent
Contextual Info: SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD237

Abstract: BD235 BD233 BD234
Contextual Info: SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD234 /236 /238 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1

bd237

Abstract: BD233
Contextual Info: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units

bd234

Contextual Info: BD234; BD236; BD238 _ _ y v SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. N-P-N complements are BD233,