BD 645 Search Results

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

7 Segment 705

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E40UBRI SINCE 1981 ● Features : 1. 0.40 inch 10.16mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

DISPLAY 7 SEGMENTS LED

Abstract: BDF52
Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F52UBRI SINCE 1981 ● Features : 1. 0.54 inch 13.80mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

seven segment 2 digit height 0.52

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-C53UBRD SINCE 1981 ● Features : 1. 0.52 inch 13.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F40UBRI SINCE 1981 ● Features : 1. 0.40 inch 10.16mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

DSA00336

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A51UBRI SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E52UBRI SINCE 1981 ● Features : 1. 0.54 inch 13.80mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BD-A51UBRD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A51UBRD SINCE 1981 ● 1. Features : ● Package Dimensions : 0.56 inch 14.20mm Digit Height. 8.10(.315) 8 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability.

Contextual Info: Chip LED, 0603, Red Feature ◆ ◆ ◆ ◆ CC-RUB0603TS-BD Viewing angle:140 deg The materials of the chip is AlGaInP 1.60mmx0.80mm×0.70mm RoHS compliant lead-free soldering compatible Package Outline 2 1 1 1 ATTENTION 2 OBSERVE PRECAUTIONS FOR HANDLING

M1006

Abstract: 18KWR0327 DM6030HK TS3332LD XM1006-BD XM1006-BD-000V XM1006-BD-EV1 M1006b
Contextual Info: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. BD DIST 36 - 0 . 6 4 ± 0 . 05 [.0 2 5 ± . 002] TYP D REVISIONS LTR H DESCRIPTION DATE DWN APVD REDRAWN WITHOUT CHANGE 21 SEP 95 PER EC 0020-1084-95

ci-42

Contextual Info: BD643F; 645F; 647F BD649F: 651F_ P hilips sbE d international • GOME^b b « phin SILICON DARLINGTON POWER TRAN SISTO RS N PN silicon Darlington transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D 6 44 F , B D 6 46 F , B D 6 48 F , B D 6 5 0 F and BD 6 52 F .

Contextual Info: D R A W I N G MADE THIS DRAWING 4 IN THIRD AN GLE P R O J E C T I O N IS UNPUBLISHED. COPYRIGHT 19 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL LOC KEY LETTER '5\SEE T A B L E -16. 84[.663] DATE CODE REVISIONS 50 BD IN TERNATIO NAL RIGHTS RESERVED.

BD 509 CONNECTOR

Abstract: 747555-1 HDP-20
Contextual Info: DRAWING THIS MADE DRAWING 4 IN THIRD ANGL E IS UNPUBLISHED. COPYRIGHT PROJECTION 19 RELEASED FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. ALL LOC D IS T BD IN TERNATIO NAL RIGHTS RESERVED. 48 0 ° 0 ' TYP REVISIONS ZONE LTR D E S C R IP TIO N B REDRAWN

Contextual Info: DRAWING THIS MADE DRAWI NG IN IS 4 THIRD ANGLE UNPUBLISHED. COPYRIGHT 19 PROJECTION RELEASED BY AMP 19 FOR P U B L I C A T I O N INCORPORATED. ALL LOC D IS T R E V ISIO N S 50 BD IN TERNATIO NAL RIGHTS RESERVED. ZONE LTR B C D 4. 0 6 [. 1 6 0 ] TYP D KEY

Contextual Info: K0#>F0'A>69;506>A0D9;49=70DC><1C9>= K0F,0C>0CE,0&DC?DCB K0-9450 1=7500 =?DC K07CFJ0C>05BJ0&?5A1C9>= K0>=E53C9>=0>>;54 K0+#BDBA0;1BB0C K0;1BB0 0>D2;50 =BD;1C9>= (80$3-(50(*/(054020F22.+&$5+104 D9;49=70 5AE935B DC><1C9>= )'0)5A95B ;1A<B01=40)53DA9CH6

bb27

Abstract: 5Y13 D895 46YO
Contextual Info:   ! %&' *+,-./012013456&7,*6814*719,:601,;&<&013 :*,=>?@.6AB21&C1.BD;EF>?G _`J`abcd`eKaIHfIgJ hi1 jk lmno43p qrs8nt01u1vw253wpw4vx43vip2y1 z{|}~25w1vw1x€i4yis311x w2p63v1412‚52ƒ|s„mn v5……†64vpw456 wipwv56wp46 561 x2412p6x 561 21v14129hi1 x14v1 ‚1pw†21 ‚p4us3p‚1 v42v†4w2‡€ˆi4vi

bh 27701

Abstract: 27701A F62Z 27701 BH 27.701 A B-27701A bf 45704 bf 44 704 bh 27 601 B-22601A
Contextual Info: PONTS MONOPHASÉS single phase bridges VR TYPES 0 , 5 A * / tamb=25°< A (V) 100 200 400 600 50 80 150 250 (A) 0,25 220 330 440 (A) 3 1.25 25°C: 125 C (MA) (mA) TYPES 10 100 200 400 600 800 1200 50 80 150 250 380 650 0,1 4 4 4 4 M 14 IN 645 IN 647 IN 649