BCX71K Search Results

smd marking BG

Abstract: BCX71H BCX71J BCX71K BCX71G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

Contextual Info: BCX71K BCX71K C E SOT-23 B Mark: BK PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BCX71G

Abstract: BCX71H BCX71J BCX71K
Contextual Info: CDIL BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M arking BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m J3.0 2.8 0.14 0.48 038 3 Pin configuration 2.6 1 = BASE

Contextual Info: BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P Silicon transistors Marking PACKAGE O UTLINE DETAILS ALL DIM ENSIONS IN mm BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK _3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE

BCX71JR

Abstract: CE 65 M BCX71GR power 22E BAY63 BCX71 BCX71G BCX71H BCX71HR BCX71J
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 – MARCH 2005 PARTMA RKING DETAIL – BCX71 BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK E C B SOT23 ABSOLUTE MA XIMU M RATINGS.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

KST5086

Abstract: BCX71K
Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCX71K

Contextual Info: BCX71K BCX71K C E SOT-23 B Mark: BK PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

25CC

Abstract: BCX71K
Contextual Info: u c t o r " BCX71K D isc re te POW ER & S ig n a l Techno logies BCX71K SOT-23 M a rk: B K PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68.

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BCW69 BCW70 BCW89 BCX17 BCX18 BCX71G BCX71H BCX71J BCX71K NEBTA55 NEBTA56 NEBTA70 NEBT2907 NEBT2907A NEBT3906 NEBT4403 hFE VCE SAT fT VCEO IC min/max@IC/VCEO max V@IC/IB typ

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

BCX71G

Abstract: BCX71H BCX71J BCX71K
Contextual Info: CDU BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g P A C K A G E O U T L IN E D E T A IL S BCX71G = BG A L L D IM E N S IO N S IN m m BCX71H = BH BCX71J = BJ BCX71K = BK _3.0 2.8 0.14 0.48 0.38 J. 0.70

Contextual Info: CDU BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g P A C K A G E O U T L IN E D E T A IL S BCX71G = BG A L L D IM E N S IO N S IN m m BCX71H = BH BCX71J = BJ BCX71K = BK _3.0 2.8 0.14 0.48 03 8 3 Pin configuration

Contextual Info: » Discrete POWER & Sig n a l Technologies National S e m i c o n d u c t o r " ' _ V Device No. SOT-23 Mark C ase Style CES V * v v CEO CBO (V) M in „ _ _ _ , Pro E lectro n S u rfa c e M o u n t B ip o la r D ev ic es 1 / 1 CES v y ebo * 1 CBO (V) Min

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

BCX71J

Abstract: BJ MARKING CODE BH Ra BCX71 BCX71G BCX71H BCX71K transistor BG 23 bk sot 23 marking
Contextual Info: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose

BCX71RG

Abstract: BCW61RB bcw61rd
Contextual Info: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C