| BCR 196W |
|
Infineon Technologies
|
Single digital (complex) AF-Transistors in SOT323 package |
Original |
PDF
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202.4KB |
9 |
| BCR196W |
|
Infineon Technologies
|
Single digital (complex) AF-Transistors in SOT23 package |
Original |
PDF
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202.4KB |
9 |
| BCR196W |
|
Infineon Technologies
|
PNP Silicon Digital Transistor |
Original |
PDF
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42.34KB |
4 |
| BCR196W |
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Infineon Technologies
|
Single Ic = 100 mA; Polarity: PNP; R1 (typ): 47.0 kOhm; R2: 22.0 k?; hFE (min): 50.0; Vi (on) (min): 1.5 2mA / 0.3V; |
Original |
PDF
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181.4KB |
10 |
| BCR196W |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
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465.63KB |
37 |
| BCR196W |
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Siemens
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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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36.25KB |
4 |
| BCR196WE6327 |
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Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
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8 |
| BCR196WE6327HTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
|
837.61KB |
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| BCR196WH6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
|
|
8 |
| BCR196WH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
|
837.61KB |
|
