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BCR192W
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Infineon Technologies
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Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: PNP; R1 (typ): 22.0 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.8 2mA / 0.3V; |
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227.62KB |
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BCR192W
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Infineon Technologies
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PNP Silicon Digital Transistor |
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41.96KB |
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BCR192W
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Infineon Technologies
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PNP Silicon Digital Transistor |
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116.34KB |
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BCR192W
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Siemens
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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
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36.09KB |
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BCR192WE6327
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
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8 |
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BCR 192WE6327
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Infineon Technologies
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TRANS DIGITAL BJT PNP 50V 100MA 3SOT-323 T/R |
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93.14KB |
4 |
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BCR192WE6327HTSA1
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
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837.26KB |
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BCR192WH6327
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
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8 |
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BCR192WH6327XTSA1
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
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837.26KB |
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