| BCR169S |
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Infineon Technologies
|
PNP Silicon Digital Transistor Array |
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PDF
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117.16KB |
4 |
| BCR169S |
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Infineon Technologies
|
SOT363 package |
Original |
PDF
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43.09KB |
4 |
| BCR169S |
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Infineon Technologies
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Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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256.33KB |
12 |
| BCR169S |
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Siemens
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PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
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44.44KB |
4 |
| BCR169S |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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465.63KB |
37 |
| BCR169SE6327 |
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Infineon Technologies
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Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP SOT363 |
Original |
PDF
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11 |
| BCR169SE6327BTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2PNP PREBIAS 0.25W SOT363 |
Original |
PDF
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868.18KB |
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| BCR169SH6327 |
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Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP SOT363 |
Original |
PDF
|
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11 |
| BCR169SH6327XTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2PNP PREBIAS 0.25W SOT363 |
Original |
PDF
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868.18KB |
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