| BCR166W |
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Infineon Technologies
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PNP Silicon Digital Transistor |
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41.94KB |
4 |
| BCR166W |
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Infineon Technologies
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Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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116.07KB |
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| BCR166W |
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Infineon Technologies
|
PNP Silicon Digital Transistor |
Original |
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41.75KB |
4 |
| BCR166W |
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Siemens
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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
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36.13KB |
4 |
| BCR166W |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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465.63KB |
37 |
| BCR166WE6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
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8 |
| BCR166WE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
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837.3KB |
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| BCR166WH6327 |
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Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
|
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8 |
| BCR166WH6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW SOT323-3 |
Original |
PDF
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837.3KB |
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