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BC869-16
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NXP Semiconductors
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BC869-16 - PNP medium power transistor; 20 V, 1 A - fT min: 40 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V |
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100.07KB |
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BC869-16
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Philips Semiconductors
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PNP medium power transistor |
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44.19KB |
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BC86916
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Zetex Semiconductors
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Obsolete |
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16.8KB |
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BC869-16
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Zetex Semiconductors
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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
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16.79KB |
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BC869-16,115
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NXP Semiconductors
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 20V 1A SOT89 |
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BC869-16,115
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NXP Semiconductors
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PNP medium power transistor; 20 V, 1 A - fT min: 40 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
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100.07KB |
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BC869-16115
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NXP Semiconductors
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NOW NEXPERIA BC869-16 - SMALL SI |
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635.74KB |
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BC869-16-TP
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Micro Commercial
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Interface |
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849.94KB |
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BC869-16T/R
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NXP Semiconductors
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PNP medium power transistor; 20 V, 1 A - fT min: 40 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V |
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100.07KB |
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BC869-16(RANGE:100-250)
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JCET Group
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PNP transistor in SOT-89-3L package, with maximum collector current of -1 A, collector-emitter voltage of -20 V, DC current gain up to 375, and transition frequency of 40 MHz. |
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BC869-16
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Shikues Semiconductor
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High current, three gain selections, 1.2 W power dissipation, SOT89 mounting, FR4 PCB, tin-plated footprint. |
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