BC517 P Search Results

bc517

Abstract: BC517 data sheet transistor BC517
Contextual Info: SEMICONDUCTOR BC517 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 816 1 2 K BC517 2. Marking 3 4 No. 1998. 6. 23 Item Marking Description Device Name BC517 BC517 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.

bc517

Abstract: StR 40000 or transistor transistor BC517
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA

bc517

Abstract: BC517S
Contextual Info: MOTOROLA SC XSTRS/R 12E D I F b3 b? 254 GGñ5ñtil BC517, S CASE 29-04, STYLE 17 TO-92 TO-226AA MAXIMUM RATINGS R a tin g Sym bol BC517 U n it VCES 30 Vdc C ollector-B ase V oltage VCB 40 Vdc E m itter-B ase Voltage V eb 10 Vdc C ollector C urren t - Continuous

bc517

Abstract: str 6707 datasheet BC517 data sheet npn darlington StR 40000 BC516 BP317 James
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor

BC517

Abstract: BC517 model file BC517 data sheet
Contextual Info: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C

BC517 data sheet

Abstract: transistor BC517 BC517
Contextual Info: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage

Contextual Info: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

bc517

Abstract: transistor BC 157 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G BC517 model file
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Collector −Emitter Voltage

transistor BC 157

Abstract: BC517 transistor bc 517
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

BC517

Contextual Info: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc

Contextual Info: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C

BC517

Abstract: BC517 data sheet
Contextual Info: Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C

bc517

Abstract: Darlington Transistor BC517 data sheet
Contextual Info: SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V VEBO 10 V Collector Current IC 500 mA Collector Power Dissipation

Contextual Info: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter

Contextual Info: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base

IC2 7805

Abstract: 2N3904 pin diagram 1N4148 BC517 IC1 7805 IC1 LM317 2n3904 2n3906 pic programmer 2N3906 pin diagram 74LS244 diagram
Contextual Info: Universität Ulm, Abt. Allg. Elektrotechnik und Mikroelektronik, R. Lares, 07.10.99 PIC Programmer for LPT PC – Circuit Diagram V.2 D2 1N4004 SW1 Power Transf. 15V 4,5W CON2 +13.5V GL1 B80 C1500 3 1 2 IC1 LM317 50mA ff. 230V ~ adjust for C1 2200µF 35V E.

BC517

Abstract: BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 125 – PNP COMPL.

Contextual Info: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon COLLECTOR 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector-Base Voltage VCB 40 Vdc Emitter-Base Voltage Veb 10 Vdc Collector- Emitter Voltage Collector Current — Continuous

BC200G

Abstract: MT4102 SO 42 P BC146G BCW83 MPSD54 MT 87 BC146 BC146R BC146Y
Contextual Info: P O L A R IT Y M in ia tu re Transistors TYPE NO. M A X IM U M R A TIN G S H CASE 'c Pd mW (mA) V CE(SAT) FE •c VCEO (V ) min max (mA) VC E 0 (V) max 'c fr N .F. min max f (M Hz) (dB) (Hz) (V ) (mA) _ _ - — — 150+ 80+ 110+ 150+ 150+ 1.5+ 1.5+ 4 1.5+

TO226AA

Abstract: 226AA
Contextual Info: Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C PNP V BR CEO IC mA Max Min Max hFE fT MHz Min NF dB Max 2N5087 50 50 250 800 40 2.0 BC560C 45 100 380 800 250 (Typ) 2.5 MPSA18 − 45 200 500 − 100 1.5 2N5088 − 30 50 350 − 50 3.0 2N5089

tr bc548

Contextual Info: This I Material tn □ tr t-1 fcH UJ □ Copyrighted □ Pro Electron Bipolar Devices V ’ ces * Device No. Case Style xa tn V CBO V Min V tceo V EBO (V) Min (V) Min 20 5 (continued) *CBO w »FE (nA)@ CB Max (V) h„ 50 85 60 5 500 1A 10 1 1 0.5 375 30K

MPS3904

Abstract: 2N5087 2N5088 2N5089 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63
Contextual Info: ON Semiconductor Selector Guide – Discrete Devices Plastic–Encapsulated Transistors continued Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity hFE @ IC NPN PNP V(BR)CEO Volts Min Max mA 250 380 500 100 350 450 300 800 800 — 300 —