BC237
Abstract: transistor bc237 BC238 NPN transistor transistor 239 BC238 transistor BC238 transistor bc237 bc337 BC239 NPN transistor bc237 transistor BC238 datasheet
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237 BC238/239 Emitter-Base Voltage
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bc237/238/239bc239bc237bc238/239+9transistor bc237bc238 npn transistortransistor 239bc238transistor bc238transistor bc237 bc337bc239 npn transistorbc237 transistorbc238 datasheet
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BC237
Abstract: transistor bc238 AN 239 IC BC238 datasheet BC239 transistor 239
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239
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bc237/238/239bc239bc237bc238/239+4transistor bc238an 239 icbc238 datasheettransistor 239
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BC238
Abstract: transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237
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bc238
Abstract: S 239 P bc237
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC239 A B S O LU T E MAXIMUM RATINGS TA-2 5 t: C h aracte ristic Rating Sym b o l Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237
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bc237/238/239bc239bc237bc238/239+2bc238s 239 p
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BC237B
Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
Contextual Info: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range
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bc237/238/239bc237bc238/239100ma+9bc237btransistor 238btransistor bc237c238cbc237a transistortransistor bc237btransistor bc237 bc337bc238238b
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TRANSISTOR BC 239 F
Abstract: transistor BC 238
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • LO W N OISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237
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TRANSISTOR 237b
Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+6transistor 237b237b transistorbc237ctabc238bc237a2bc237
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TRANSISTOR 237b
Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+7transistor 237bbc239 npn transistorbc238 npn transistorcross reference bc237bc239ctatransistor bc 458transistor bc 238 b
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BC238
Abstract: BC237 SAT1000 BC238 datasheet BC239
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+3bc238sat1000bc238 datasheet
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BC237
Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).
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bc237/8/9bc237bc239bc307/308/309+5bc238bc2378transistor bc237 bc337transistor bc238bc237 transistor
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BC237B
Abstract: bc239c transistor bc237 bc337 transistors BC23 bc237 bc237bg AYWW marking code IC DATASHEET Transistor BC239c BC239 NPN transistor download datasheet BC239C equivalent
Contextual Info: BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* 2 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC237 BC239 Collector −Emitter Voltage
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bc237bc237bbc237cbc239c+8bc239transistor bc237 bc337transistors bc23bc237bgayww marking code icdatasheet transistor bc239cbc239 npn transistor download datasheetbc239c equivalent
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bc237
Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K
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bc237/8/9bc239bc307/308/309bc237+7bc238bc23agebc237 complementarytransistor bc238bc307transistor bc239120120a
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bc237v
Abstract: bc238 BC237
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0
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bc237bc238bc239bc238b+3bc239c226aabc237v
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BC239C
Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0
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bc237bc238bbc239cbc238+8bc239r14525bc237/ddatasheet transistor bc239c238bbc238 datasheetbc239c equivalentbc237a
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BC237
Abstract: BC237 complementary bc238 bc239 BC307
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC237 VCEO=45V. ・Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).
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bc237/8/9bc239bc307/308/309bc237+3bc238bc237 complementarybc307
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BC237
Abstract: bc238 BC239C BC238B bc237v
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector −Emitter Voltage VCEO 45 25 25 Vdc Collector −Emitter Voltage VCES 50 30 30 Vdc Emitter −Base Voltage VEBO
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bc237bc238bc239bc238b+3bc239co-226aabc237v
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transistor bc237 bc337
Abstract: BC238 NPN transistor download datasheet BC238 BC238 datasheet BC237 transistor bc237 transistor bc238 BC239 BC239 NPN transistor download datasheet bc238 equivalent
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC237 VCEO=45V. ᴌLow Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).
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bc237/8/9bc237bc239bc307/308/309+8bc238transistor bc237 bc337bc238 npn transistor download datasheetbc238 datasheettransistor bc237transistor bc238bc239 npn transistor download datasheetbc238 equivalent
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BC237
Abstract: BC238 datasheet BC239
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+1bc238 datasheet
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bc237
Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
Contextual Info: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage
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bc237/238/239bc237bc238/239bc238+7bc239100mhzbc237bbc237abc237c238b238c
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BC173
Abstract: BC171 BC174 bc172 BC238 BC239 BC238 h parameter transistor bc171 transistor bc237 bc337 BC237
Contextual Info: BC171 . . BC237 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups, A, B an C according to their current gain. Types BC171, BC174 and BC237 are available in groups A and B, types BC172 and
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bc171bc237bc174bc172+6bc238bc173bc239bc238 h parametertransistor bc171transistor bc237 bc337
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BC237
Abstract: BC238 datasheet BC239 BC239 NPN transistor
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+2bc238 datasheetbc239 npn transistor
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BC238 NPN transistor
Abstract: BC237
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 . LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector-E m itter Voltage Rating Unit V V V ceS : BC237 : BC238/239 C ollector-E m itter Voltage
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bc237/238/239bc239bc237bc238/239+1bc238 npn transistor
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bc238 equivalent
Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage
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bc237bc238bbc239bc238+13226aare218amsc1621t1msc2404bc238 equivalentbc237 equivalentbc237 equivalent transistorbc237c equivalentnpn transistor bc238b equivalentbc238 h parameterbc237 pin lay-outbc237 sot23bc237v
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bc238
Contextual Info: TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 3. EMITTER A BC237 50V BC238/239 30V Operating and storage junction temperature range
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bc237/238/239bc237bc238/239bc238/itter+3100ma100mhzbc238
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