BC 950 Search Results

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

capacitor electrolytic BC

Abstract: BC 2222 136 68221 15-05-410
Contextual Info: BC COMPONENTS 150 RMI Aluminium electrolytic capacitors Radial Miniature, Low Impedance Preliminary specification Supersedes data of February 1999 File under BC Components, BC01 1999 Apr 14 COMPONENTS BC Components Preliminary specification Aluminium electrolytic capacitors

transistor bc 102

Abstract: PHILIPS BC 116 Series Electrolytic Capacitors philips ELECTROLYTIC capacitors bc bc 813 philips ELECTROLYTIC capacitors 035 Philips electrolytic BC 140 61102 BC 2222 136 68221 philips ELECTROLYTIC capacitors bc components capacitors
Contextual Info: BC COMPONENTS DATA SHEET 140 RTM Aluminium electrolytic capacitors Radial High Temperature Miniature Preliminary specification Supersedes data of May 1998 File under BC Components, BC01 1999 Feb 17 BC Components Preliminary specification Aluminium electrolytic capacitors

BC 116 capacitor

Abstract: BC 2222 136 68221 transistor Bc 540 BC 55472 bc 540 RML MARKING CODE BC electrolytic capacitors 023 capacitor electrolytic BC bc 136 radial capacitor bc 407 data sheet
Contextual Info: BC COMPONENTS DATA SHEET 150 RMI Aluminium electrolytic capacitors Radial Miniature, Low Impedance Preliminary specification Supersedes data of February 1999 File under BC Components, BC01 1999 Apr 14 BC Components Preliminary specification Aluminium electrolytic capacitors

BC 2222 053 58102

Abstract: BC 2222 053 56221 053 56471 053 58681 2222 051 48103 BC 2222 051 57103 1000-053 series bc 052 BC 2222 138 capacitor electrolytic BC
Contextual Info: BC COMPONENTS DATA SHEET 051/053 PEC-PW Aluminum electrolytic capacitors Power Economic Printed Wiring Product specification Supersedes data of January 1998 File under BC Components, BC01 2000 Jan 18 BC Components Product specification Aluminum electrolytic capacitors

capacitor electrolytic BC

Abstract: TFA046 046 55221 BC electrolytic 046
Contextual Info: BC COMPONENTS DATA SHEET 046 RSL Aluminum electrolytic capacitors Radial Standard Long-Life Maintenance type Supersedes data of January 1998 File under BC Components, BC01 2000 Jan 18 BC Components Maintenance type Aluminum electrolytic capacitors Radial Standard Long-Life

transistor c111

Abstract: C111 transistor PDB-C111 3X1013
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C111 DETECTORS INC. PACKAGE DIMENSIONS INCH mm Ø0.795 Ø[20.19] Ø0.500 BC Ø[12.70] BC Ø0.720 Ø[18.29] 0.225 [5.72] 0.159 [4.04] WINDOW CAP Ø0.608 Ø[15.44] ANODE 0.375 [9.53] Ø0.030 [0.76]

philips tcxo 4322 191

Abstract: TDA 17821 philips 341 mkc TDA 7283 PHILIPS TCXO 4322 191 2 capacitor philips 341 mkc tda 3050 Philips 2222 053 90032 capacitors 594 varistor philips UAA 1250
Contextual Info: BC Components Product Guide 1999 Contents Page BC Components 5 World Wide Web 6 Ordering 7 New Products & Highlights 9 Series Index 10 Ceramic Capacitors, Leaded 13 Film Capacitors 34 Electrolytic Capacitors 59 Film Dielectric Trimmer Capacitors 103 Fixed Linear Resistors

Photodiode cost sheet

Abstract: PDB-V111
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photovoltaic Type PDB-V111 DETECTORS INC. PACKAGE DIMENSIONS INCH mm Ø0.795 Ø[20.19] Ø0.500 BC Ø[12.70] BC Ø0.720 Ø[18.29] 0.225 [5.72] 0.159 [4.04] WINDOW CAP Ø0.608 Ø[15.44] ANODE 0.375 [9.53] Ø0.030 [0.76]

Contextual Info: Document 169-1 ChipInductors –1008HTSeries 2520 These low profile inductors are 40% thinner than our conventional 1008 body sizes. They feature standard inductance tolerances of 5-10%, high SRFs and very high Q. 1 Part Number 1008HT-3N3T _ BC 1008HT-6N8T _ BC

C122

Abstract: 47N60 6n81
Contextual Info: Document 169-1 ChipInductors –1008HTSeries 2520 These low profile inductors are 40% thinner than our conventional 1008 body sizes. They feature standard inductance tolerances of 5-10%, high SRFs and very high Q. 1 Part Number 1008HT-3N3T _ BC 1008HT-6N8T _ BC

Contextual Info: Data Sheet NX8663JB-BC R08DS0063EJ0100 Rev.1.00 Jul 05, 2012 1 650nm InGaAsP MQW-DFB DC-PBH PULSED LASER DIODE MODULE FOR OTDR APPLICATION LASER DIODE DESCRIPTION The NX8663JB-BC is a 1 650 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) pulsed

bc 7-25

Abstract: NX7563JB-BC PX10160E
Contextual Info: Preliminary Data Sheet NX7563JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION R08DS0010EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single

bc 7-25

Abstract: NX7363JB-BC PX10160E
Contextual Info: Preliminary Data Sheet NX7363JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION R08DS0009EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single

NR8360JP-BC

Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
Contextual Info: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated

NR8360JP-BC

Abstract: InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350
Contextual Info: PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

Contextual Info: CVHD-950 Model 9x14 mm SMD, 3.3V, CMOS 50 MHz HCMOS 3.3V 80 MHz HCMOS 3.3V K STE CRY -950 D H CV Hz 50 M K STE CRY -950 D H CV Hz 80 M z /H Bc z /H Bc 6d -16 1d -16 100 MHz HCMOS 3.3V 130 MHz HCMOS 3.3V K STE CRY -950 D CVH Hz M 130 K STE CRY -950 D H CV

NX7361JB-BC

Abstract: NX7361JB-BC-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 150 mW MIN NX7361JB-BC FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode

cvhd-950

Contextual Info: CVHD-950 Model 9x14 mm SMD, 3.3V, CMOS 50 MHz HCMOS 3.3V 80 MHz HCMOS 3.3V K STE CRY -950 D H CV Hz 50 M K STE CRY -950 D H CV Hz 80 M z /H Bc z /H Bc 6d -16 1d -16 100 MHz HCMOS 3.3V 130 MHz HCMOS 3.3V K STE CRY -950 D CVH Hz M 130 K STE CRY -950 D H CV

Contextual Info: LASER DIODE NX7363JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

X13769E

Abstract: C11531E NX7563JB-BC NX7563JB-BC-AZ P12480E P13623E
Contextual Info: DATA SHEET LASER DIODE NX7563JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

Contextual Info: HF-Drosseln RF Chokes Bedrahtet / Leaded Bobbin-Core LN LR µH Toleranz Tolerance Baureihe BC BC series 1,0 ±10% = 1,2 ˆK 1,5 1,8 2,2 2,7 3,3 3,9 4,7 5,6 6,8 8,2 10 12 15 18 22 27 33 39 47 ±5% = 56 ˆJ 68 82 100 120 150 180 220 270 330 390 470 560 20 fL

P12480E

Abstract: NX7663JB-BC NX7663JB-BC-AZ C11531E 70MA120 C11159E GBBS
Contextual Info: DATA SHEET LASER DIODE NX7663JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

NX7561JB-BC

Abstract: NX7561JB-BC-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP