BC 817 25 NPN Search Results

BC818C

Abstract: marking 6E B 817 c
Contextual Info: NPN Silicon AF Transistors BC 817 BC 818 For general AF a pplications High c o lle c to r cu rre n t High cu rre n t gain L o w c o lle c to r-e m itte r saturation voltage C om plem entary typ e s: BC 807, BC 808 PNP Type B B C 817-16 B B C 817-25 B B C 817-40

BC 194 TRANSISTORS

Abstract: marking code BC marking 5A
Contextual Info: PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type S BC 807-16 S BC 807-25 S BC 807-40 Marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO

ic 817

Abstract: B 817 4 pin 817 B 817 c P 817 bc 817 6CS sot 23 ic 817 B 2BC817
Contextual Info: BC 817, BC 818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807, BC 808 PNP 1 Type Marking Pin Configuration BC 817-16

C1740

Abstract: ic 817 Q62702-C1740 C1505 Q 817 c1740 npn 6CS marking code sot 23 B 817 C1738 Q62702-C1505
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code Pin Configuration

jc 817

Abstract: BC 817 25 NPN marking 6CS 6CS marking code sot 23 IC jc 817 marking 6bs Q62702-C1738 B 817 c ic 817 Q62702-C1690
Contextual Info: SIEM EN S NPN Silicon AF Transistors • • • • • BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code PinC tonfiguration

ic 817

Abstract: Q62702-C1740 marking 6bs 6CS marking code sot 23 Q62702-C1505 Q62702-C1690 Q62702-C1732 Q62702-C1738 Q62702-C1739 bc 170
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP 2 3 1 Type Marking Ordering Code Pin Configuration

ic 817

Abstract: C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN
Contextual Info: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS NPN Silicon AF Transistors • • • • • BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code PinC lonfigur ation

Contextual Info: I NPN Silicon AF Transistors 32E D m ÔB3b320 SIEM ENS/ • • • • • ' D01bb20 SPCL-, ^ ' 1' BC817 T WMSIP BC818 SEM ICON DS For general AF applications High collector current High current gain Low collector-emltter saturation voltage Complementary types: BC 807, BC 808 PNP

BC817

Abstract: BC818
Contextual Info: BC 817 / BC 818 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

Contextual Info: BC 817 / BC 818 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

C2320

Abstract: Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278
Contextual Info: BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration Package

817-U

Abstract: 6Bs transistor
Contextual Info: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

VSO05561

Abstract: 818-25W
Contextual Info: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type

transistor 1Bs

Abstract: ic 817 BC817UPN
Contextual Info: BC 817U PN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5

BC817-40

Abstract: 6as sot23 BC807 BC808 BC817 BC817-16 BC817-25 BC818 BC818-16 BC818-25
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E

ic 817

Abstract: BC807 BC808 BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 BC818-25
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E

Contextual Info: BC 817 / BC 818 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung B 1.3 ±0.1 C 2.5 max 0.4 Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 310 mW E Dimensions / Maße in mm

Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16

BC817-40 INFINEON

Abstract: Thermal CUTOFF 6AS SOT23
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E

Contextual Info: BC 817 / BC 818 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung B ±0.1 C 2.5 max 0.4 Plastic case Kunststoffgehäuse 1.1 ±0.1 1.3 2.9 310 mW E Dimensions / Maße in mm

bc 807

Contextual Info: BC 817 / BC 818 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 310 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca. 0.01 g