BAV 20 Search Results

C1134

Abstract: DO-213AA
Contextual Info: BAV 100 … BAV 103 Ultrafast Switching Surface Mount Si-Rectifiers Ultraschnelle Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…300 V Plastic case MiniMELF

diode a4s

Abstract: marking code a4s A4S SOT-23 Q68000-A6622 DIODE BAV JS v A4s diode
Contextual Info: Silicon Switching Diode Array BAV 70 For high-speed switching ● Common cathode ● Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

GRUNER

Contextual Info: BAV 100 … BAV 103 Ultrafast Switching Surface Mount Si-Rectifiers Ultraschnelle Si-Gleichrichter für die Oberflächenmontage 0.4 3.5 0.4 1.6 Nominal current – Nennstrom 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…300 V

diode marking 74

Abstract: BAV74 Q62702-A693 DIODE BAV JS v
Contextual Info: Silicon Switching Diode Array ● For high-speed switching ● Common cathode BAV 74 Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

Marking A7S sot

Contextual Info: SIEMENS BAV 99S Silicon Sw itching Diode Array • For high-speed switching applications • Connected in series • Internal galvanic isolated Diodes in one package Type Marking O rdering Code Pin C onfiguration BAV 99S A7s 1/4 = A1 Q62702-A1277 Package

bav 27 v

Contextual Info: BAV 18 … BAV 21 Silicon-Planar-Diodes Silizium-Planar-Dioden Nominal current Nennstrom 250 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…200 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Dimensions / Maße in mm

VSO05561

Abstract: A7s marking diode
Contextual Info: BAV 99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol

SC-75

Contextual Info: BAV 70T Silicon Switching Diode Array Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV 70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC-75 Maximum Ratings Parameter

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

JXs sot

Abstract: BAV170 MarKING Jxs sot23
Contextual Info: BAV 170 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 170 JXs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter

diode marking 74

Abstract: BAV74
Contextual Info: BAV 74 Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70

Abstract: SOT-23 marking A4s A4S SOT-23
Contextual Info: BAV 70 Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

SC-75

Abstract: VPS05996
Contextual Info: BAV 99T Silicon Switching Diode Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV 99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC-75 Maximum Ratings Parameter

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

BAV 199 SOT23

Abstract: BAV199 P 101 Series
Contextual Info: BAV 199 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV 199 JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-23 Maximum Ratings Parameter

VSO05561

Abstract: w1901
Contextual Info: BAV 70W Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV 70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol

VPS05604

Abstract: A7s marking diode
Contextual Info: BAV 99S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Connected in series
Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration

Contextual Info: BAV 70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration

DIODE A6

Abstract: Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE
Contextual Info: SPRflGUE DIODES « DIODES » DIODES « DIODES ♦ DIODES THE MARK OF RELIABILITY SERIES BAV and BAW MICROMINIATURE DIODES • • Series BAS, BAV, and BAW consists of standard European single and dual diode types. Devices are molded in a T 0 -2 6 3 A A high-profile or T O -2 3 6 AB (low-profile) package. These

2N2369 SOT-23

Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

diode marking w8

Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

BAV70

Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
Contextual Info: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99

connector 26 pin

Abstract: BAV 1G 8 bit data encoder 05N70 BAV 62
Contextual Info: Absolute single-turn shaft encoder BAV parallel features • absolute single-turn encoder up to 12 bit • fast, parallel interface • servo flange • Gray code general data mechanical data voltage supply 5 VDC ± 5% 05N 10 - 30 VDC (24K) max. revolutions

g 9084

Abstract: bav 24 diode BAV 303
Contextual Info: BAV300.BAV303 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic se a led parts • Fits onto S O D 323 / S O T 23 footprints • Electrical data identical with the B A V 100.B AV103 / BAV 200.B AV203 devices Applications