BAT 43 SCHOTTKY DIODES Search Results

Contextual Info: BAT 42 BAT 43  SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. DO 35

BAT 43 Schottky Diodes

Contextual Info: BAT 42 BAT 43  SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. DO 35

BAT53

Abstract: BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C
Contextual Info: ^ schottky diodes diodes schottky th o m so n -csf Types N N BAT BAT BAR BAR BAR 17 53 18 42 43 N BAR 43 A Characteristics at 25 ° C Maxim um ratings @ Vr Vp C @ •F Vr m 'F |r V (mA) max (uA) (V) min max (V) 4 10 70 30 30 30 30 30 100 100 0,25 0,1 0,2

BAT 43 Schottky Diodes

Abstract: bat 42
Contextual Info: BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostaticdischarges. DO 35 Glass

BAT 127

Contextual Info: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.

Contextual Info: Schottky Barrier Rectifiers 150/200 mW Schottky/DO-35 M axim um Forward Voltage Drop Peak Reverse Voltage BAT 42 BAT 43 *BAT 46 M ax. Reverse Current PRV If m V FM mA V fm V ' fm V mA V 30 30 100 10 2 10 0.4 0.33 0.45 50 15 250 0.65 0.45 1.0 * 150 mW. max. pow er dissipation @25°C

Contextual Info: £ÿl BAT 42 _BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltagesuch as electrostaticdischarges.

Contextual Info: SGS-THOMSON TM MBAT 42 TM M BAT 43 SMALL SIGNAL SCHOTTKY DIODES D E S C R IP T IO N 3eneral purpose metal to silicon diodes featuring /ery low turn-on voltage fast switching. These devices have integrated protection against sxcessive voltage such as electrostatic discharges.

BAS18

Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Contextual Info: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)

Bat 16-046

Contextual Info: SIEMENS AKTIENGESELLSCHAF bGE ]> 7 ^0 3 - / 3 SIEMENS Dioden Diodes Schottky Dioden Schottky Diodes /R at PF fiA Dual 25 100 < 1 .1 0 < 1.00 20 <400 BAS 125-06 (Dual) 25 100 < 1 .1 0 < 1.00 20 <4 0 0 BAS 125-07 (Dual) 25 100 < 1 .1 0 < 1 .0 0 ' 20 4 90 <0.35

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

68W SOT

Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Contextual Info: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua

SCHOTTKY DIODES CROSS REFERENCE

Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
Contextual Info: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C

Contextual Info: 7 SGS-THOMSON ^ 7# B A T 42 B A T 43 M I ïftm ig T M M S SMALL SIGNAL SCHOTTKY DIODES D E S C R IP T IO N G en era l p u rp o s e m e tal to silicon diod es fea turin g very low turn-o n vo lta g e and fa s t sw itching. T h e se d e vice s have in te g ra te d protectio n ag ainst

SMBD2837

Abstract: 550 SOT143 br sot-143 SMBD2836
Contextual Info: Diodes For com plete package outlines, refer to pages PO-1 through PO-6 General Purpose, Switching and Rectifier Type BAL74 BAL99 BAR74 BAR99 BAS 16 BAS16W BAS 19 BAS20 BAS21 BAS28 BAS78A BAS78B BAS78C BAS78D BAS79A BAS79B BAS79C BAS79D BASI 16 BAV70 BAV70W

BAT 127

Abstract: A502GE A503GE byv 20 BYV 35 CB-127
Contextual Info: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10

Contextual Info: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. MINIMELF

Schottky

Contextual Info: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.

IN5819M

Contextual Info: IIAIEC SURFACE MOUNT SCHOTTKY DIODES 150/200 mW SCHOTTKY/MINI-MELF DO-35 Type Number Maximum Junction Dissipation OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +125°C Capacitance Max. Reverse I Max, Fwd. Voltage Drop VF IM < 8 : V LL42 LL.43 LL.46 200

Contextual Info: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. MINIMELF

Contextual Info: TMMBAT 42 TMMBAT 43  SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges.

Contextual Info: SGS'THOMSON TMMBAT 42 TMMBAT 43 Kffl D [S© E1 [L H © ^ K 5 0 g ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against

AT120A

Contextual Info: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes

IN5711

Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Contextual Info: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100