BASE RESISTANCE FOR SOT23 Search Results

KTC2875

Contextual Info: SEMICONDUCTOR KTC2875 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES ・High Emitter-Base Voltage : VEBO=25V Min. E B L L ・High Reverse hFE ・Low on Resistance : RON=1Ω(Typ.), (IB=5mA) H 1 P Collector-Base Voltage

KTC2875

Abstract: P300 EH SOT23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC2875 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES • High Emitter-Base Voltage : VEB0=25V Min. • High Reverse Iife : Reverse hFE=150(Typ.) (Vce=~2V, Ic=-2mA) • Low on Resistance : Ron=1£2 (Typ.), (lB=5mA)

spice germanium diode

Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Contextual Info: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23

4 phase stepper motor

Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
Contextual Info: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR

transistor smd marking BA RE

Abstract: fr51 FR MARKING SMD TRANSISTOR transistor smd marking BA CMBT2484 ba sot23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

Contextual Info: STESB01 ESBT Base Driver Features • Controls ESBT Base Current in Every Line/ Load Condition ■ Supply Voltage Range: 8V to 20 V ■ Storage Time Controlled by Closed Loop Architecture from 150ns to 1.5µs ■ SOT23-6L Under Voltage Lockout With Hysteresis

ts 4141 TRANSISTOR smd

Abstract: CMBT2484
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

Marking C4 SOT23-5

Abstract: D06A marking code ce SOT23 MARKING CODE R7 DIODE LM3460 MA05B SHUNT REGULATOR marking "7A" MARKING CODE R7 RF TRANSISTOR
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

D06A

Abstract: LM3460 MF05A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

D06A

Abstract: LM3460 MF05A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

D44H8

Abstract: 2N3906 AN-450 D06A LM3460 MF05A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

AN-450

Abstract: C1996 D06A LM3460 MA05A SHUNT REGULATOR marking "7A"
Contextual Info: LM3460-1 2 -1 5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination This controller is available in a tiny SOT23-5 package and includes an internally compensated op amp a bandgap reference an NPN output transistor and voltage setting resistors

sot23-5 marking ha

Abstract: BT2222 equivalent for transistor tt 2222 transistor tt 2222 D06A LM3460 MA05A 2N3906 Darlington transistor MARKING CODE R7 RF TRANSISTOR
Contextual Info: May 1996 Semiconductor ß LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available In a tiny SOT23-5 package, and in­

PH11 SOT23

Abstract: BFS17 TRANSISTOR C 1177
Contextual Info: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

Marking C4 SOT23-5

Abstract: D09A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

FMMT493ATA

Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

FMMT493A

Abstract: FMMT493ATA FMMT493ATC
Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

2N3700CSM

Abstract: 2N3700 test 2N3700
Contextual Info: 2N3700CSM HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)

BFR106

Abstract: MSB003 MBB773
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PIN DESCRIPTION 3 Code: R7p