BASE 1105 Search Results

Contextual Info: Ordering Stud base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e.g. N013 - normal polarity, R013 reverse polarity: (1N3899 - normal, 1N38S9R - reverse).

wedge lamp 168

Abstract: wedge lamp 161 wedge lamp 194 ILI 2302 SF 183A
Contextual Info: 1 AMP flATA •■■■■«■■ wawm « ■m m 1-3%, T-4 and T-5 Wedge Base Lamps Lue M ÍTlpS/ Volts Watts 6 2W 6 6.3 6.3 6.3 Lumens M SCP hours riiameni shape T-4 T-3K 10mm 13mm T-5 1fimm Wedge Base Wedge Base Wedge Base W2.1 X 9.5d W2.1 x9.5d W2.1 X 9.5d

2SC4367

Abstract: DSA003637
Contextual Info: 2SC4367 Silicon NPN Epitaxial ADE-208-1105 Z 1st. Edition Mar. 2001 Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2sc5200 toshiba

Abstract: Toshiba 2SC5200 toshiba 2sc5200 audio power amplifier 2sC5200, 2SA1943 2SA1943 toshiba 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2-21F1A 2SA1943 power amplifier 2sc5200 2sa1943 TRANSISTOR
Contextual Info: TO SH IBA 2SC5200 TOSHIBA TRANSISTOR Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. Ì— È MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

QCA200BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA200BA60 UL;E76102 （M） 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1

2sc4367

Abstract: 2SC4367TZ-E PRSS0003DC-A
Contextual Info: 2SC4367 Silicon NPN Epitaxial REJ03G0724-0200 Previous ADE-208-1105 Rev.2.00 Aug.10.2005 Application High Frequency amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

700-TFL-9001

Contextual Info: REVISIONS REV DESCRIPTION DATE APPROVED ECS INC. INTERNATIONAL ECS P/N: 700-TFL-9001 1105 S. Ridgeview Olathe, KS 66062 913 782-7787 SIGNATURES DRN BL CHK DK APP BS DATE 1/11/2011 1/11/2011 1/11/2011 TITLE HC-49U/US Base Insulator SIZE A Dimensions in mm

IEC 60061-1

Abstract: 60061-1 7004-94-x wedge lamp t1 60061.1 wedge lamp 1105l prisma
Contextual Info: PRODUCT DATA SHEET Type Incandescent Size T5 T-1½ Rating 6V 1W Description T5 Wedge base lamp Part No. 1105LF LCL 9.0 ± 2.0 Exhaust tip to clear in 3.05 dia. hole (1.5) Retention Groove (0.7) 5.5 Max. 14.5 Max 3.1 Max. 1.65 Min. 3.0 Min ø 5.0 Max 2.5 ~ 3.5

706-TFL-UM1

Contextual Info: REVISIONS REV DESCRIPTION DATE APPROVED ECS P/N: 706-TFL-UM1 ECS INC. INTERNATIONAL 1105 S. Ridgeview Olathe, KS 66062 913 782-7787 SIGNATURES DRN BL CHK RC APP DK DATE 7/13/2011 7/13/2011 7/13/2011 TITLE UM-1 Base Insulator SIZE A Dimensions in mm DWG NO.706-TFL-UM1

HC-46X Base Insulator

Abstract: HC-46X 700-TFL-46
Contextual Info: REVISIONS REV DESCRIPTION DATE APPROVED ECS INC. INTERNATIONAL ECS P/N: 700-TFL-46 1105 S. Ridgeview Olathe, KS 66062 913 782-7787 SIGNATURES DRN BL CHK DK APP BS DATE 9/20/2011 9/20/2011 9/20/2011 TITLE HC-46X Base Insulator SIZE A Dimensions in mm DWG NO.700-TFL-46

IR-Diode

Abstract: TCDT1101G TCDT1102G IEC60065 TCDT1100 TCDT1100G TCDT1101 TCDT1102 VDE0884 E7622
Contextual Info: VISHAY TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise

tcdt112

Abstract: TCDT1100 Series tcdt1102
Contextual Info: VISHAY TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise

TCDT1101G

Contextual Info: TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise immunity

4 PIN IC Optocoupler with Phototransistor Output

Abstract: phototransistor terminal identification TCDT1102 TCDT1103 TCDT1100 TCDT1101
Contextual Info: TCDT1100/TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES • Isolation test voltage 5300 VRMS • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • No base terminal connection for improved noise immunity

Contextual Info: VISHAY TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise

phototransistor terminal identification

Abstract: TCDT1102G IEC60065 TCDT1100 TCDT1100G VDE0884
Contextual Info: TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise immunity

CTR50

Contextual Info: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21

toshiba 2sa965 audio power amplifier

Abstract: toshiba audio power amplifier 2SA965 2SC2235 transistor 2sC2235 0058669
Contextual Info: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21

CM73

Abstract: lamps c-2f cm85 Scans-0080 CM8663 1 ow
Contextual Info: SUB-MINIATURE LAMPS INTERNATIONAL T -1 1/2 5mm Wedge Base W2x4*6d Lamp Number Volts Amps/ Watts Lumens MSCP Life (hours) Filament Shape 1103 1104 1105 1107 1108 60 60 6-0 12 0 12 0 0-03A 0 08A 10W 0 03A 1 OW 0-30 0 90 3-80 0 70 3 00 0024 007 0-30 0056 024

sanrex THYRISTOR

Abstract: PWB200AA30 PWB200AA PWB200AA40
Contextual Info: THYRISTOR MODULE PWB200AA PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications. ● IT（AV）200A（each device） Surge Current 6000 A（60Hz） ● Easy Construction ● Non-isolated. Mounting base as common Anode terminal

Contextual Info: MOSFET MODULE SF150BA50 UL;E76102 （M） SF150BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

2sd1220

Abstract: 2SB905
Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO

2-7D101A

Abstract: 2SC3666
Contextual Info: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage