| BAS85 |
|
Diodes Incorporated
|
Silicon Schottky Barrier Diode |
Original |
PDF
|
47.09KB |
1 |
| BAS85 |
|
EIC Semiconductor
|
Schottky Barrier Diodes |
Original |
PDF
|
84.3KB |
1 |
| BAS85 |
|
Galaxy Semi-Conductor Holdings
|
SMALL SIGNAL SCHOTTKY DIODES |
Original |
PDF
|
57.9KB |
2 |
| BAS85 |
|
General Semiconductor
|
SCHOTTKY DIODE |
Original |
PDF
|
26.54KB |
1 |
| BAS85 |
|
General Semiconductor
|
Schottky Diodes |
Original |
PDF
|
42.14KB |
2 |
| BAS85 |
|
Good-Ark
|
Rectifier Diode, Schottky Diode, Single, DO-213AA, 2-Pin |
Original |
PDF
|
451.86KB |
1 |
| BAS85 |
|
Kexin
|
Schottky Barrier Diode |
Original |
PDF
|
54.98KB |
2 |
| BAS85 |
|
NXP Semiconductors
|
BAS85 - Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V |
Original |
PDF
|
89.21KB |
10 |
| BAS85 |
|
Philips Semiconductors
|
Schottky barrier diode |
Original |
PDF
|
26.76KB |
5 |
| BAS85 |
|
Philips Semiconductors
|
Schottky Barrier Diode |
Original |
PDF
|
50.44KB |
8 |
| BAS85 |
|
Philips Semiconductors
|
Schottky Barrier Diode |
Original |
PDF
|
89.35KB |
4 |
| BAS85 |
|
TY Semiconductor
|
TY Equivalent - Schottky Barrier Diode - LL-34 |
Original |
PDF
|
140.05KB |
2 |
| BAS85 |
|
Vishay Semiconductors
|
Small Signal Schottky Barrier Diode |
Original |
PDF
|
63KB |
4 |
| BAS85 |
|
Vishay Telefunken
|
Schottky Barrier Diode |
Original |
PDF
|
51.87KB |
4 |
|
|
| BAS85 |
|
General Semiconductor
|
Over 600 obsolete distributor catalogs now available on the Datasheet Archive - DIODE, Schottky, small signal, glass, 0.2A, pkg: Mini-MELF |
Scan |
PDF
|
79.97KB |
1 |
| BAS85 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
87.59KB |
1 |
| BAS85,115 |
|
NXP Semiconductors
|
BAS85 - DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode |
Original |
PDF
|
89.21KB |
10 |
| BAS85,115 |
|
NXP Semiconductors
|
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
Original |
PDF
|
49.5KB |
9 |
| BAS85,135 |
|
NXP Semiconductors
|
BAS85 - DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode |
Original |
PDF
|
89.21KB |
10 |
| BAS85,135 |
|
NXP Semiconductors
|
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
Original |
PDF
|
49.5KB |
9 |
