BAS17 Search Results

Contextual Info: Product specification BAS170WS SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Schottky diode for high-speed switching +0.1 2.6-0.1 1.0max Circuit protection Voltage clamping 0.375 0.475 +0.05 0.1-0.02 High-level detecting and mixing

Contextual Info: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC

BAS170W

Contextual Info: BAS170W 2 Silicon Schottky Diode 1
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detection and mixing Type BAS170W Marking 7 VPS05176 Pin Configuration 1=C 2=A Package SOD323 - Maximum Ratings Parameter

BAS170W

Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

Contextual Info: BAS70. / BAS170W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2

VISHAY DIODE MARKING

Contextual Info: BAS170WS VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Mechanical Data 17431 Case: SOD-323 Plastic case Weight: approx. 5.0 mg

Contextual Info: BAS170WS VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Mechanical Data 17431 Case: SOD-323 Plastic Package Weight: approx. 5.0 mg

DIN 6784

Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS170W

Abstract: BAS70 BAS70-02L BAS70-02W BAS70-04S BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70-06
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

marking code 76s

Abstract: BAS70-07W BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS70-07

Abstract: 75S SOT23 schottky 73s BAS70-07W BAS170W BAS70 BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

Contextual Info: Philips Semiconductors Product specification Low-voltage stabistor FEATURES BAS17 PINNING • Low-voltage stabilization PIN • Forward voltage range: 580 to 960 mV • Total power dissipation: max. 250 mW. DESCRIPTION 1 anode 2 not connected 3 cathode APPLICATIONS

Contextual Info: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing AEC-Q101 qualified Compliant to RoHS directive 2002/95/

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BAS17 Low-voltage stabistor Product data sheet Supersedes data of 1999 May 31 2003 Mar 25 NXP Semiconductors Product data sheet Low-voltage stabistor BAS17 FEATURES PINNING • Low-voltage stabilization PIN

Contextual Info: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing AEC-Q101 qualified Compliant to RoHS directive 2002/95/

Contextual Info: Product specification r iM p i uaffmeonouciora BAS17 Low-voltage stabistor FEA T U R ES PINNING • Low-voltage stabilization PIN • Forward voltage range: 580 to 960 mV 1 • Total power dissipation: max. 250 mW. D ESC R IPT IO N anode 2 not connected 3

BAS70

Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

Contextual Info: BAS170WS Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BAS17 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r lew voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection. Q UICK REFERENCE D ATA Repetitive peak forward current

S1RB

Abstract: Philips MARKING CODE a91
Contextual Info: D bbS3T31 □□Eb2DE TTT H A P X BAS17 N AMER PHIL IPS/DISCRETE_ J V LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection.

Contextual Info: BAS170WS Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing AEC-Q101 qualified Compliant to RoHS directive 2002/95/

Philips MARKING CODE

Abstract: Philips MARKING CODE a91 mv marketing code sot23 "MARKING CODE A9*" BAS17 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS17 Low-voltage stabistor Product specification Supersedes data of 1996 Mar 20 1999 May 31 Philips Semiconductors Product specification Low-voltage stabistor FEATURES BAS17 PINNING • Low-voltage stabilization

marking 34 diode SCHOTTKY

Abstract: surge diode marking code d6 marking code DIODE d6 surge 10KHZ BAS170WS MARKING D6 diode surge diode marking d6 diode D5 marking marking code 73
Contextual Info: BAS170WS ct u d ro P New SOD-323 .012 0.3 .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Mounting Pad Layout 0.055 (1.40) 0.047 (1.20) .004 (0.1) max. 0.062 (1.60) .006 (0.15) max. .059 (1.5) .049 (1.25) max. Dimensions in inches and (millimeters)